Formation of TiO2 Thin Film on Antibacterial Metal Injection Molding Stainless Steel Orthodontic Bracket 17-4 PH Using Physical Vapor Deposition Method

2020 ◽  
Vol 846 ◽  
pp. 169-174
Author(s):  
Sugeng Supriadi ◽  
Annisa Ovilia ◽  
Nurul Ilmaniar ◽  
Bambang Suharno

This study aims to equip orthodontic bracket SS 17-4 PH fabricated using metal injection molding with antibacterial properties. This can be achieved by applying TiO2 coating on the surface of brackets using magnetron sputtering PVD method. This method is chosen due to its compatibility to be used on bulk metal and its ability to control thin-film stoichiometry. Samples were prepared using the series of following steps which comprised of metal injection molding, binder elimination with solvent and thermal debinding, sintering in vacuum and argon atmosphere, electropolishing, and magnetron sputtering PVD coatings as the final stage. Negative bias, sputtering power, and partial pressure on vacuum chamber were set as the constant parameters. The atmosphere inside the PVD chamber was controlled using oxygen and argon gases. XRD and SEM observations were carried out to obtain the information on the phase and morphology of the films. Rutile and anatase crystalline structures with 2,27 nm and 9,78 nm crystal size were measured in as-deposited PVD TiO2 respectively. The deposition films were achieved in the range of 3 μm-8 μm.

2017 ◽  
Vol 4 (5) ◽  
pp. 6466-6471 ◽  
Author(s):  
Kittikhun Seawsakul ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Pattantsetakul ◽  
Saksorn Limwichean ◽  
...  

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.


2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .


2018 ◽  
Vol 278 ◽  
pp. 48-53 ◽  
Author(s):  
Hao Liang

ZnO thin films have been paid more attention by the scientific community because of their long wavelength and high temperature resistance, and the method of preparing ZnO-TFT by magnetron sputtering is one of the most widely recognized technologies. In this paper, the influence factors, such as sputtering power, sputtering oxygen argon ratio and sputtering temperature, are introduced. In this paper, the ZnO thin film substrate materials are analyzed, and the corresponding conclusions are obtained.


2017 ◽  
Vol 266 ◽  
pp. 238-244 ◽  
Author(s):  
Sugeng Supriadi ◽  
Bambang Suharno ◽  
Rizki Hidayatullah ◽  
Gerra Maulana ◽  
Eung Ryul Baek

Generally, metal injection molding (MIM) method utilizes SS 17-4 PH as material for application of orthodontic bracket. One of the process of MIM is thermal debinding, which binder is eliminated by thermal energy. In this study, thermal debinding process is conducted with variation of temperature, i.e. 480, 510, and 540°C, holding time, i.e. 0.5, 1 and 2 hours, heating rate, i.e. 0.5, 1, 1.5, and 2°C/min.The effect of temperature shows that the increased temperature will result in the mass reduction percentage due to formation of oxide on the sample, which will be proven through TGA testing. The highest mass reduction was 6.4137 wt% which was obtained at 480°C. For the variation of holding time, the longer the holding time will result in increased mass reduction and the highest mas reduction was 6.255 wt% which was obtained during 2 hours of holding time. For the heating rate, the slower the heating rate will result in increased mass reduction and decreased the presence of crack formation. The best variable was obtained at heating rate of 0.5°C/min, which resulted mass reduction of 6.2488 wt% and less crack formation.


2013 ◽  
Vol 552 ◽  
pp. 186-192
Author(s):  
Ni Zhang ◽  
Feng Shi ◽  
Yu Feng Zhu ◽  
Hong Chang Cheng ◽  
Jing Nie ◽  
...  

Micro-channel Plate (MCP) with Ion Barrier Film(IBF) is one of the main technical indicators that restrict the performance of the third generations of Low Light Level Image Intensifier(LLLII). IBF with inferior quality can be a direct impact on the performance of the third generations of LLLII or even makes it not work, and it’s very unfavorable in the tube mass production and promotion. In response to this urgent requirement, in order to improve the quality and preparation of the finished product of the Al2O3 on the input side of MCP prepared by magnetron sputtering, the paper carries out the process optimization of magnetron sputtering used for image intensifier. By simulation of Ar ion bombarding Al2O3 target, while under the guidance of the working principles of the magnetron sputtering and thin film growth theory, we change the working pressure、 sputtering power、 argon flow and other process parameters by using magnetron sputtering machine developed in China, to change the coating deposition rate of Al2O3, and to increase the lateral migration of the film-forming process of Al2O3. Finally we prepare a uniform、 continuous and compact Al2O3 Ion Barrier Film. At last the optimal technique is obtained: Sputtering pressure is 2.6×10-1Pa, Ar2 flux is 90sccm, sputtering power is 170W, and the thickness of film is 80Å. We test the performance of MCP with optimized films by using the MCP performance testing devices, contrasting with pre-fabricated thin-film quality, and the results show that the average gain decline is dropped, the dead volt is lower, and the quality of the films prepared by this process is significantly better, yield and view pass rate is as high as 90%, meeting the dual demands of high electronic transmittance and high ion blocking rate of IBF.


2021 ◽  
pp. 151604
Author(s):  
Saqib Rashid ◽  
Gian Marco Vita ◽  
Luca Persichetti ◽  
Giovanna Iucci ◽  
Chiara Battocchio ◽  
...  

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