The Research on Preparation Process Optimization of Ion Barrier Film on the Input Side of MCP

2013 ◽  
Vol 552 ◽  
pp. 186-192
Author(s):  
Ni Zhang ◽  
Feng Shi ◽  
Yu Feng Zhu ◽  
Hong Chang Cheng ◽  
Jing Nie ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Process Optimization ◽  
Performance Testing ◽  
Image Intensifier ◽  
Lateral Migration ◽  
The Third ◽  
Sputtering Power ◽  
Input Side ◽  
Barrier Film

Micro-channel Plate (MCP) with Ion Barrier Film(IBF) is one of the main technical indicators that restrict the performance of the third generations of Low Light Level Image Intensifier(LLLII). IBF with inferior quality can be a direct impact on the performance of the third generations of LLLII or even makes it not work, and it’s very unfavorable in the tube mass production and promotion. In response to this urgent requirement, in order to improve the quality and preparation of the finished product of the Al2O3 on the input side of MCP prepared by magnetron sputtering, the paper carries out the process optimization of magnetron sputtering used for image intensifier. By simulation of Ar ion bombarding Al2O3 target, while under the guidance of the working principles of the magnetron sputtering and thin film growth theory, we change the working pressure、 sputtering power、 argon flow and other process parameters by using magnetron sputtering machine developed in China, to change the coating deposition rate of Al2O3, and to increase the lateral migration of the film-forming process of Al2O3. Finally we prepare a uniform、 continuous and compact Al2O3 Ion Barrier Film. At last the optimal technique is obtained: Sputtering pressure is 2.6×10-1Pa, Ar2 flux is 90sccm, sputtering power is 170W, and the thickness of film is 80Å. We test the performance of MCP with optimized films by using the MCP performance testing devices, contrasting with pre-fabricated thin-film quality, and the results show that the average gain decline is dropped, the dead volt is lower, and the quality of the films prepared by this process is significantly better, yield and view pass rate is as high as 90%, meeting the dual demands of high electronic transmittance and high ion blocking rate of IBF.

Effects of sputtering power toward the Al-doped ZnO thin Film prepared by pulsed DC magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6466-6471 ◽  
Author(s):  
Kittikhun Seawsakul ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Pattantsetakul ◽  
Saksorn Limwichean ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Zno Thin Film ◽  
Dc Magnetron Sputtering ◽  
Pulsed Dc ◽  
Sputtering Power ◽  
Doped Zno ◽  
Pulsed Dc Magnetron Sputtering

Structural, Morphological and Adhesion Properties of Cofeb Thin Films Deposited by DC Magnetron Sputtering

2013 ◽  
Vol 802 ◽  
pp. 47-52
Author(s):  
Chuleerat Ibuki ◽  
Rachasak Sakdanuphab
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Crystalline Structure ◽  
Glass Substrate ◽  
Intrinsic Stress ◽  
Dc Magnetron Sputtering ◽  
Adhesion Properties ◽  
Sputtering Power

In this work the effects of amorphous (glass) and crystalline (Si) substrates on the structural, morphological and adhesion properties of CoFeB thin film deposited by DC Magnetron sputtering were investigated. It was found that the structure of a substrate affects to crystal formation, surface morphology and adhesion of CoFeB thin films. The X-Ray diffraction patterns reveal that as-deposited CoFeB thin film at low sputtering power was amorphous and would become crystal when the power increased. The increase in crystalline structure of CoFeB thin film is attributed to the crystalline substrate and the increase of kinetic energy of sputtering atoms. Atomic Force Microscopy images of CoFeB thin film clearly show that the roughness, grain size, and uniformity correlate to the sputtering power and the structure of substrate. The CoFeB thin film on glass substrate shows a smooth surface and a small grain size whereas the CoFeB thin film on Si substrate shows a rough surface and a slightly increases of grain size. Sticky Tape Test on CoFeB thin film deposited on glass substrate indicates the adhesion failure with a high sputtering power. The results suggest that the crystalline structure of substrate affects to the atomic bonding and the sputtering power affects to intrinsic stress of CoFeB thin film.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

Study on the Properties of ZnO-TFT Prepared by Magnetron Sputtering

2018 ◽  
Vol 278 ◽  
pp. 48-53 ◽  
Author(s):  
Hao Liang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Scientific Community ◽  
Influence Factors ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Temperature Resistance ◽  
Long Wavelength ◽  
Sputtering Power ◽  
Film Substrate

ZnO thin films have been paid more attention by the scientific community because of their long wavelength and high temperature resistance, and the method of preparing ZnO-TFT by magnetron sputtering is one of the most widely recognized technologies. In this paper, the influence factors, such as sputtering power, sputtering oxygen argon ratio and sputtering temperature, are introduced. In this paper, the ZnO thin film substrate materials are analyzed, and the corresponding conclusions are obtained.

scholarly journals SPECTROSCOPIC STUDY OF RF MAGNETRON SPUTTERING PLASMA FOR DEPOSITION TI6AL4V THIN FILM

2021 ◽  
Vol 03 (03) ◽  
pp. 103-110
Author(s):  
Dawood S. ALI ◽  
Omar M. DAWOOD
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Plasma Temperature ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Plasma Parameters ◽  
Working Pressure ◽  
Standard Data ◽  
Sputtering Power

In this work, RF magnetron sputtering plasma for the deposition of Ti6Al4V thin film has been investigated by using optical emission spectroscopy at argon working pressure of 5×10-3 mbar. The emission lines intensity of the plasma were measured using a spectrometer, and the identify peaks within the selective range of patterns and matched with the standard data from the NIST website to measure the plasma parameters. Since the sputtering power plays an important role to the growth of thin film, so the effect of sputtering power of 50, 75, 100, 125 and 150Watt has been studied on produced plasma parameters. The size of Ti6Al4V sputtering target was 50mm in diameter. The argon gas flow was 40 s ccm. One can observe that the lines intensities increased with increasing the sputtering power. The plasma temperature increases from 1.86 to 2.15 eV, while its density increased from 2.69 ×1018 to 2.94 ×1018 cm-3with increasing the rf power from 50 to 150 W, which effect on sputtering rate.

Optimization in Synthesis of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

2014 ◽  
Vol 575 ◽  
pp. 254-263 ◽  
Author(s):  
Hua Jing Zheng ◽  
Chi Zhang ◽  
Zheng Ruan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Magnetron Sputtering ◽  
Water Pressure ◽  
Dc Magnetron Sputtering ◽  
Sputtering Power ◽  
Conductive Substrate ◽  
Ito Thin Films ◽  
Sputtering Pressure

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Series of research and exploration are presented on DC magnetron sputtering method for preparing ITO thin film. With substrate temperature of 60 °C, sputtering power of 200W,sputtering pressure of 1 mTorr, water pressure of 2×10-5Torr, the sheet resistance of the ITO conductive substrate is 53 Ω/□ and the transmittance is 83%.

Formation of TiO2 Thin Film on Antibacterial Metal Injection Molding Stainless Steel Orthodontic Bracket 17-4 PH Using Physical Vapor Deposition Method

2020 ◽  
Vol 846 ◽  
pp. 169-174
Author(s):  
Sugeng Supriadi ◽  
Annisa Ovilia ◽  
Nurul Ilmaniar ◽  
Bambang Suharno
Keyword(s):  
Thin Film ◽  
Injection Molding ◽  
Magnetron Sputtering ◽  
Physical Vapor Deposition ◽  
Antibacterial Properties ◽  
Metal Injection Molding ◽  
Orthodontic Bracket ◽  
Sputtering Power ◽  
Physical Vapor Deposition Method ◽  
Thermal Debinding

This study aims to equip orthodontic bracket SS 17-4 PH fabricated using metal injection molding with antibacterial properties. This can be achieved by applying TiO2 coating on the surface of brackets using magnetron sputtering PVD method. This method is chosen due to its compatibility to be used on bulk metal and its ability to control thin-film stoichiometry. Samples were prepared using the series of following steps which comprised of metal injection molding, binder elimination with solvent and thermal debinding, sintering in vacuum and argon atmosphere, electropolishing, and magnetron sputtering PVD coatings as the final stage. Negative bias, sputtering power, and partial pressure on vacuum chamber were set as the constant parameters. The atmosphere inside the PVD chamber was controlled using oxygen and argon gases. XRD and SEM observations were carried out to obtain the information on the phase and morphology of the films. Rutile and anatase crystalline structures with 2,27 nm and 9,78 nm crystal size were measured in as-deposited PVD TiO2 respectively. The deposition films were achieved in the range of 3 μm-8 μm.

Effect of DC-pulsed magnetron sputtering power on structural, tribological and biocompatibility of Ti–Zr–N thin film

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
F. M. El-Hossary ◽  
A. M. Abd El-Rahman ◽  
M. Raaif ◽  
Shuxin Qu ◽  
Junsheng Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Sputtering Power ◽  
Pulsed Magnetron

Fabrication of LSGM Thin Film Electrolyte on LSCM Anode by RF Magnetron Sputtering for IT-SOFC

2011 ◽  
Vol 675-677 ◽  
pp. 81-84
Author(s):  
Jie Yu ◽  
Wen Hui Ma ◽  
Hang Sheng Lin ◽  
Hong Yan Sun ◽  
Xiu Hua Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Power Density ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Electrolyte Film ◽  
Sputtering Power ◽  
Film Electrolyte ◽  
Ar Gas

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) thin film electrolytes were fabricated on La0.7Sr0.3Cr0.5Mn0.5O3-δ (LSCM) porous anodes by radio-frequency (RF) magnetron sputtering. The formation and microstructure of LSGM thin films were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM). The effects of different sputtering conditions, such as Ar gas pressure, substrate temperature and sputtering power, on the performance of LSGM electrolyte film were estimated. Dense LSGM thin film electrolytes with thickness of about 2μm, which are compatible with LSCM-based anodes and without crack, have been successfully fabricated on LSCM-based anode supports by RF magnetron sputtering when sputtering power density is 5.2W·cm-2, Ar gas pressure is 5Pa and substrate temperature is 300°C. It is found that high sputtering power density and high Ar gas pressure, as well as high substrate temperature, are beneficial to deposition of dense electrolyte thin film, close bonding of electrolyte thin film with anode substrate, and formation of large three phase boundaries between anode and electrolyte.

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