Fabrication of Ge30Te 70-xSbx Glasses Alloys and Studying the Effect of Partial Substitution on D.C Electrical Energy Parameters

2021 ◽  
Vol 900 ◽  
pp. 163-171
Author(s):  
Riyadh Kamil Chillab ◽  
Sarab Saadi Jahil ◽  
Kassim Mahdi Wadi ◽  
Kareem Ali Jasim ◽  
Auday H. Shaban

The non-linear components has been emphasized for its multiple applications in rewritable recording and data storage devices. Chalcogenide glasses materials are promising due to their high refractive index. In this paper, alloys for Ge30Te 70-xSbx glasses semiconductor (where x =0.0, 5, 10, 15 and 20) will be fabricated by melt quenching method. The effect of partial substitution on DC electric power parameters, and its knowledge of electrical conduction mechanisms, were investigated to determine the effect of Antimony on the density of extended states, local states, and in Fermi energy states. The electrical measurements revealed the existence of three conduction mechanisms depend on the temperature: at high temperature the conduction will be in the extended state. The local states are responsible at medium temperature, and at low temperature it will related to the Fermi level. The effect of partial substitution had produced change in all electrical conductivity parameters including the (extended, localized, and Fermi) density of states, the activation energy, tail width (ΔE), hoping transition distance (R), and interatomic distances a.

2011 ◽  
Vol 25 (20) ◽  
pp. 1671-1681 ◽  
Author(s):  
YURI APARECIDO OPATA ◽  
ANDERSON ROSA KURELO ◽  
LINCOLN BRUM DE LEITE ◽  
GUSMÃO PINHEIRO ◽  
PEDRO RODRIGUES ◽  
...  

A detailed study of the effect caused by the partial substitution of Er by Ce on fluctuation conductivity of the Er 1-x Ce x Ba 2 Cu 3 O 7-δ; 0 ≤ x ≤ 0.10; is presented. The combined experimental results of structural and electrical measurements indicate that Ce substitutes Er for x ≤ 0.10 with no significant structural distortions. However, there is suppression of the superconducting state with zero-resistance state at temperatures ≥ 86.3 K. The results were analyzed in terms of the temperature derivative of the resistivity and the logarithmic temperature derivative of the conductivity to identify power-law divergences of the conductivity. The data revealed the occurrence of a two-stage intragranular-intergranular transition. Above the critical temperature, the Gaussian and critical regimes were observed. Also, from the critical exponents analysis, we observed a splitting of the pairing transition for Ce -doped samples, suggesting the occurrence of a phase separation. On approaching the zero resistance state, our results showed a power-law behavior that corresponds to a phase transition from a paracoherent to a coherent state of the granular array and which does not depend on Ce doping.


2019 ◽  
Vol 126 (6) ◽  
pp. 064104 ◽  
Author(s):  
T. Lakshmana Rao ◽  
M. K. Pradhan ◽  
U. K. Goutam ◽  
V. Siruguri ◽  
V. R. Reddy ◽  
...  

2020 ◽  
Vol 80 (10) ◽  
Author(s):  
S. Bhattarai ◽  
R. Panth ◽  
W.-Z. Wei ◽  
H. Mei ◽  
D.-M. Mei ◽  
...  

AbstractFor the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of $$2.13^{-0.05}_{+0.07}\mathrm{{A}}^\circ $$ 2 . 13 + 0.07 - 0.05 A ∘ to $$5.07^{-0.83}_{+2.58}\mathrm{{A}}^\circ $$ 5 . 07 + 2.58 - 0.83 A ∘ , depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.


2017 ◽  
Vol 77 (2) ◽  
pp. 20801 ◽  
Author(s):  
Philippe Teulet ◽  
Tommy Billoux ◽  
Yann Cressault ◽  
Mathieu Masquère ◽  
Alain Gleizes ◽  
...  

This work is devoted to the calculation of the energy balance associated with the formation of an electric arc between the bolt shank and an inner structural part of the fuselage during a lightning strike. Assessment of the pressure build-up in the confined volume around the bolt fastener has also been performed. This pressure rise comes from the temperature increase and from the mass density increase (melting and vaporisation of materials). Previous electrical measurements performed by Airbus Group during a lightning test campaign have been used to calculate the total available electrical energy. The energies necessary for melting and vaporisation of bolt and rib are derived from thermodynamic properties of aluminium and titanium. A numerical code has been developed to determine the chemical composition (under the local thermodynamic equilibrium [LTE] assumption) and the internal energy of the plasma for air-Al/Ti mixtures. Plasma and material radiation losses and heat conduction losses have also been evaluated. Finally, an analytical model has been implemented to determine the overpressure as a function of the deposited electrical energy, the energy involved in the arc formation, the energy necessary for melting and the plasma composition and mass density. With this approach, maximum pressure values are in the range 200–330 bars.


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