A Study on the Interface Diffusion of In2O3/ITO Multilayer Thin-Film Thermocouple

2022 ◽  
Vol 905 ◽  
pp. 174-183
Author(s):  
Yu Qing Xue ◽  
Yi Dan Wang ◽  
Dong Yang Lei ◽  
Yu Feng Sun
Keyword(s):  
Thin Film ◽  
Diffusion Model ◽  
Multilayer Thin Film ◽  
Test Results ◽  
Sensitive Layer ◽  
Interface Diffusion ◽  
Thin Film Thermocouple ◽  
Simulation Calculation ◽  
New Type ◽  
Temperature Test

In2O3/ITO multilayer thin film thermocouple is a new type of semiconductor thin-film thermocouple, which has broad application prospects. The interface diffusion between the layers is the main cause of its thermal oxidation failure. In this paper, an interface diffusion model of multilayer films is established based on Fick's second law. A sample of In2O3/ITO thin-film thermocouple was prepared, then designed and conducted high temperature test. According to the test results, the diffusion of substances between the film layers was analyzed. Based on the established interface diffusion model, a simulation calculation is carried out. The influence of interface diffusion on the life of In2O3 and ITO sensitive layer was quantitatively analyzed.

Research on Interfacial Diffusion Reliability Model of Thin Film Thermocouple

2021 ◽  
Vol 881 ◽  
pp. 77-85
Author(s):  
Dong Yang Lei ◽  
Yu Feng Sun ◽  
Yu Qing Xue ◽  
Guang Yan Zhao
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Diffusion Model ◽  
Great Influence ◽  
Protective Layer ◽  
Reliability Model ◽  
Interfacial Diffusion ◽  
Parallel Diffusion ◽  
High Temperature Measurement ◽  
Thin Film Thermocouple

Thin film thermocouple (TFTC) is widely used in high temperature measurement, which is of short response time, less heat residual and integrated structure. Due to the ultra-thin structure of TFTC, the interfacial diffusion has a great influence on its reliability when exposed to high temperature environment, which leads to its performance degradation. Taking thermocouple on the turbine blade as research object, the parallel diffusion model of multilayer thermocouple is proposed based on Fick’s law. The reliability model of the protective layer, the sensitive layer and the insulating layer are established in the basis of the parallel diffusion model. According to the logical correlation among the multilayer films of TFTC, the TTF model of TFTC is given. Finally, an example of reliability model based on multilayer diffusion is simulated by Monte Carlo method, which demonstrates the feasibility of the method and model.

InZnON-based Thin Film Transistor for the Development of New Type Photo Detec-tors with a Colloidal Quantum Dots Sensitive Layer

2020 ◽  
Vol 22 (8) ◽  
pp. 452-460
Author(s):  
A.B. Cheremisin ◽  
◽  
S.A. Macegor ◽  
D.M. Puzanov ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Thin Film Transistor ◽  
Monochromatic Light ◽  
Colloidal Quantum Dots ◽  
Pure Oxygen ◽  
Semiconductor Layer ◽  
Sensitive Layer ◽  
Nitrogen Doped ◽  
New Type

Some applications of thin film transistors (TFTs) need the bottom-gate architecture and unpassivated channel backside. In present work, we propose rather simple way to fabricate nitrogen doped InZnO-based TFT by DC reactive magnetron sputtering technique. The moderate nitrogen doping of the channel's semiconductor layer is studied in terms of the reproducibility and stability device's electrical characteristics. When nitrogen concentration in gas mix reaches the upper level of 71 % the best TFT parameters are achieved such as VON = -0.3 V, μ = 12 cm2/Vs, SS = 0.5 V/dec. The TFTs operate in depletion mode exhibiting high turn on/turn off current ratio more than 106. It is shown that the oxidative post-fabrication annealing at 250 °C in pure oxygen and next ageing in dry air for several hours provide highly stable operational characteristics under negative and positive bias stresses despite open channel backside. The prospects of using the thin-film transistor for the new type of photo detectors with a colloidal quantum dots (CQDs) sensitive layer are demonstrated. The solution-cast colloidal-quantum-dots were decorated on the nitrogen doped InZnO layer by spin-coating method. N-type CdSe/ZnS CQDs modified by the ligand (pyridine) are utilized as electron donor to inject electron to the channel layer. Higher photocurrent responsibility about 104 A/W at incident monochromatic light 405 nm is reached for hybrid phototransistor.

scholarly journals A New Type of Domain and Interacting Bloch-lines in a Dzyaloshinskii-Moriya Multilayer Thin Film

2020 ◽  
Vol 26 (S2) ◽  
pp. 1772-1773
Author(s):  
Joseph Garlow ◽  
Shawn Pollard ◽  
Marco Beleggia ◽  
Hyunsoo Yang ◽  
Yimei Zhu
Keyword(s):  
Thin Film ◽  
Multilayer Thin Film ◽  
New Type ◽  
Bloch Lines

Fast Thermal Cycling and Electro-Migration Properties of Si/TaSi2/TiN/Al-Si Multilayer Thin Film Contacts

1994 ◽  
Vol 337 ◽  
Author(s):  
Valentin V.Baranov ◽  
Victor M.Ivkin ◽  
Elena L.Sakovitch
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Life Time ◽  
Electrical Current ◽  
Cycle Period ◽  
Multilayer Thin Film ◽  
Optimal Conditions ◽  
Average Grain Size ◽  
Sputter Deposited ◽  
Temperature Test

ABSTRACTFor the electromigration test of Si/TaSi2/(Al-1wt%Si) and Si/TaSi2/TiN/(Al-1wt%Si) multilayer contacts we employed the special test structures which allow to passage a pulsed electrical current through the semiconductor region lying under investigated contacts and insulated from them by n+/p-junction. The contacts were tested in the optimal conditions (temperature was cycled in the ranges from 50°C to 175°C with 300ms thermal cycle period at 25 mA constant electrical current passaged through the investigated contacts). It has been shown that the electromigration life time has been shortened by more than an order of the magnitude compared to 200°C constant temperature test. SEM investigations of the sputter deposited thin film of multilayer contact have also shown that the Al-Si thin film on the TaSi2 layer had a fine structure with the average grain size about 0,3 μm. However a presense of the TiN interlayer with the thickness of 0.05 - 0.1 pm results in an increase of the average grain size of the upper Al-Si film up to 0,8μm. The result is the increase in the electromigration process activation energy that improves the electromigration life time contacts containing the TiN interlayer.

A New Scanning Thermal Microprobe

1997 ◽  
Vol 503 ◽  
Author(s):  
Yongxia Zhang ◽  
Yanwei Zhang ◽  
Juliana Blaser ◽  
T. S. Sriiram ◽  
R. B. Marcus
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Thermal Response ◽  
Temperature Sensing ◽  
Thermal Sensor ◽  
Atomic Force ◽  
Thin Film Thermocouple ◽  
Processing Steps ◽  
Thermocouple Junction

ABSTRACTA thermal microprobe has been designed and built for high resolution temperature sensing. The thermal sensor is a thin-film thermocouple junction at the tip of an Atomic Force Microprobe (AFM) silicon probe needle. Only wafer-stage processing steps are used for the fabrication. The thermal response over the range 25–s 4.5–rovolts per degree C and is linear.

scholarly journals Selective normal mode excitation in multilayer thin film bulk acoustic wave resonators

2014 ◽  
Vol 105 (16) ◽  
pp. 162910 ◽  
Author(s):  
Andrey Kozyrev ◽  
Anatoly Mikhailov ◽  
Sergey Ptashnik ◽  
Peter K. Petrov ◽  
Neil Alford
Keyword(s):  
Thin Film ◽  
Acoustic Wave ◽  
Normal Mode ◽  
Bulk Acoustic Wave ◽  
Multilayer Thin Film ◽  
Mode Excitation ◽  
Film Bulk ◽  
Acoustic Wave Resonators ◽  
Bulk Acoustic Wave Resonators
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