Fast Thermal Cycling and Electro-Migration Properties of Si/TaSi2/TiN/Al-Si Multilayer Thin Film Contacts

1994 ◽  
Vol 337 ◽  
Author(s):  
Valentin V.Baranov ◽  
Victor M.Ivkin ◽  
Elena L.Sakovitch
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Life Time ◽  
Electrical Current ◽  
Cycle Period ◽  
Multilayer Thin Film ◽  
Optimal Conditions ◽  
Average Grain Size ◽  
Sputter Deposited ◽  
Temperature Test

ABSTRACTFor the electromigration test of Si/TaSi2/(Al-1wt%Si) and Si/TaSi2/TiN/(Al-1wt%Si) multilayer contacts we employed the special test structures which allow to passage a pulsed electrical current through the semiconductor region lying under investigated contacts and insulated from them by n+/p-junction. The contacts were tested in the optimal conditions (temperature was cycled in the ranges from 50°C to 175°C with 300ms thermal cycle period at 25 mA constant electrical current passaged through the investigated contacts). It has been shown that the electromigration life time has been shortened by more than an order of the magnitude compared to 200°C constant temperature test. SEM investigations of the sputter deposited thin film of multilayer contact have also shown that the Al-Si thin film on the TaSi2 layer had a fine structure with the average grain size about 0,3 μm. However a presense of the TiN interlayer with the thickness of 0.05 - 0.1 pm results in an increase of the average grain size of the upper Al-Si film up to 0,8μm. The result is the increase in the electromigration process activation energy that improves the electromigration life time contacts containing the TiN interlayer.

Fast Thermal Cycling - Enhanced Electromigratton Failures in Si/TiSi2W-Ti/Al-Si-Cu Multilayer Contacts

1995 ◽  
Vol 391 ◽  
Author(s):  
Victor V. Ivkin ◽  
Valentin V. Baranov
Keyword(s):  
Thin Film ◽  
Barrier Layer ◽  
Contact Region ◽  
Electrical Current ◽  
Temperature Cycling ◽  
Cycle Period ◽  
Multilayer Thin Film ◽  
Sputter Deposited ◽  
The One ◽  
High Constant Temperature

AbstractFailure mechanisms of TiSi2/W-Ti(15%)/Al-Si(l%)-Cu(2%) multilayer thin film contact to silicon shallow junction (0,25 μm) have been investigated. Both a fast temperature cycling (with 300 ms thermal cycle period) and a high constant temperature were used as means for the degradation processes acceleration. We have shown that stress time could be reduced by the factor of 10 or more if the temperature of adjacent contact region was cycled by a pulsed electrical current passed through the semiconductor region lying under the investigated contacts. Our data have also indicated that W-Ti barrier layer serves to reduce drastically the electromigration degradation of thin film contacts for failures caused by an increase in junction leakage on the one hand and on the other hand it serves to intensify the electromigration degradation caused by an increase in contact resistance. These distinctions have been explained through structural-morphological investigations of the contact layers surface morphology. They showed a reduction in size of crystallines of the sputter deposited Al-Si-Cu top layer with W-Ti barrier layer present.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

The Effect of Sintering Temperature on the Crystal Structure and Luminescence Properties of Pr:LSO Polycrystalline Films

2016 ◽  
Vol 852 ◽  
pp. 1080-1086
Author(s):  
Xiao Xin Zhang ◽  
Jian Jun Xie ◽  
Ying Shi ◽  
Ling Cong Fan ◽  
De Bao Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Decay Time ◽  
Sintering Temperature ◽  
Coating Layer ◽  
Sol Gel ◽  
Characteristic Emission ◽  
Average Grain Size ◽  
Lutetium Oxyorthosilicate ◽  
Xrd Patterns

Lutetium oxyorthosilicate (Lu2SiO5, LSO) doped with Pr3+ was synthesized on cleaned silicon (111) substrates by sol-gel route with the spin-coating technique. XRD patterns indicated that the films were crystallized into A-type LSO phase at 1000 °C, followed by a phase transition to B-type LSO occurred at 1100 °C. SEM observations revealed that the surface of the films was smooth, homogeneous and crack-free. When the sintering temperature was 1000 °C, the average grain size of the crystal particles was 100-200 nm and the thickness of the thin film was about 380 nm when the coating layer number up to 10. While the sintering temperature was 1100 °C, the average grain size of the crystal particles was 200-300 nm and the thickness of the thin film was about 320 nm also 10 layers. PL spectra showed when under 1000 °C, the quenching concentration of Pr3+ was 0.3 mol%, the characteristic emission peaks was 289 nm and 340 nm and the dominant decay time was 4.64 ns; while under 1100 °C, the quenching concentration of Pr3+ was 0.4 mol%, the characteristic emission peaks was 280 nm and 320 nm and the dominant decay time was 2.61 ns.

Microstructure Prediction by Finite Element Analysis during Hot Rolling of Magnesium Alloy Sheets

2015 ◽  
Vol 661 ◽  
pp. 105-112
Author(s):  
Yeong Maw Hwang ◽  
Tso Lun Yeh
Keyword(s):  
Grain Size ◽  
Magnesium Alloy ◽  
Optimal Conditions ◽  
Compression Tests ◽  
Element Analysis ◽  
Grain Sizes ◽  
Average Grain Size ◽  
Microstructure Prediction ◽  
Alloy Microstructure ◽  
The Relationship

Material’s plastic deformation by hot forming processes can be used to make the materials generate dynamic recrystallization (DRX) and fine grains and accordingly products with more excellent mechanical properties, such as higher strength and larger elongation can be obtained. In this study, compression tests and water quenching are conducted to obtain the flow stress of the materials and the grain size after DRX. Through the regression analysis, prediction equations for the magnesium alloy microstructure were established. Simulations with different rolling parameters are conducted to find out the relationship between the DRX fractions or grain sizes of the rolled products and the rolling parameters. The simulation results show that rolling temperature of 400°C and thickness reduction of 50% are the optimal conditions. An average grain size of 0.204μm-0.206μm in the microstructure is obtained and the strength and formability of ZK60 magnesium alloys can be improved.

Solid-Phase Crystallization of a-Si:H by RTA

2010 ◽  
Vol 44-47 ◽  
pp. 4151-4153 ◽  
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xiang Ju Han ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Amorphous Silicon ◽  
Glass Substrate ◽  
Solid Phase ◽  
X Ray Diffraction ◽  
Solid Phase Crystallization ◽  
X Ray ◽  
Average Grain Size ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.

Characterization of New SBT Sol System and its thin film on the Platinum Electrode for Fram Application

1997 ◽  
Vol 493 ◽  
Author(s):  
YongSoo Choi ◽  
WooSik Kim ◽  
ChangEun Kim ◽  
WhanSik Yoo ◽  
BaeYeon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Grain Size ◽  
Platinum Electrode ◽  
Chelating Agent ◽  
Si Substrate ◽  
Electrode Area ◽  
Average Grain Size

ABSTRACTStable SBT sols for FRAM application were made from Sr-isopropoxide, Bi-acetate, and Ta-ethoxide with 2-ethoxyethanol as a solvent and chelating agent, TEA. The sol were spin-on coated on the Pt /Ti/SiO2/Si substrate. From the IR and DTA/TGA, the 2-ethoxyethanol -triethanolamine sol system is quite stable against aging. 5% excess Bi added sol and 800°C heat treatment of the thin film revealed the most crystallinity. There is a change in the orientation of thin film above 800°C heat treatment from c-axis to(105). The average grain size of thin film is very small, i.e., 40 nm at 800°C, and it has very narrow distributions, and the thickness of the coating were about 100nm, which would promise smaller electrode area and higher yield.

scholarly journals Structural behavior of rf magnetron sputtered cupric oxide (CuO) films

2020 ◽  
Vol 25 (2) ◽  
pp. 1-7 ◽  
Author(s):  
Ali Khilkhal ◽  
Abdalhussain A. Khadayeir
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Cupric Oxide ◽  
Rf Sputtering ◽  
Average Diameter ◽  
The Other ◽  
Structural Behavior ◽  
Mean Square ◽  
Average Grain Size ◽  
Afm Analysis

In this paper a CuO thin film, has been deposited using RF sputtering technique, then the thin film has been characterized by XRD, result obtained showed that strongest peak was 48.6503 degree, and FWHM was 0.145 degree, while lattice constant was 4.65 Aº, and the average grain size was 62.78 nm. While AFM analysis showed that the increasing of another four samples temperature led to increase of roughness average from (3.77 to 15.7) nm, root mean square from (4.66 to 18.8) nm and ten points height from (22.6 to 52.6) at 250,300,350 and 400 C respectively. On the other hand granularity cumulation distribution charts showed average diameter has varied from (57.42, to 135.41) nm with grain numbers per line ( 364, to 135) respectively.

CRITICAL SURFACE TENSION, CRITICAL SURFACE ENERGY AND PARACHOR OF MnSO3 THIN FILM

2016 ◽  
Vol 23 (03) ◽  
pp. 1650009 ◽  
Author(s):  
İ. A. KARIPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Tension ◽  
Grain Size ◽  
Surface Energy ◽  
Film Thickness ◽  
Critical Surface ◽  
Critical Surface Tension ◽  
Average Grain Size ◽  
The Relationship

This study examines the critical surface energy of manganese sulfite (MnSO[Formula: see text] crystalline thin film, produced via chemical bath deposition (CBD) on substrates. In addition, parachor, which is an important parameter of chemical physics, and its relationship with grain size, film thickness, etc., has been investigated for thin films. For this purpose, MnSO3 thin films were deposited at room temperature using different deposition times. Structural properties of the films, such as film thickness and average grain size, were examined using X-ray diffraction; film thickness and surface properties were measured by and atomic force microscope; and critical surface tension of MnSO3 thin films was measured with Optical Tensiometer and calculated using Zisman method. The results showed that critical surface tension and parachor of the films have varied with average grain size and film thickness. Critical surface tension was calculated as 32.97, 24.55, 21.03 and 12.76[Formula: see text]mN/m for 14.66, 30.84, 37.07 and 44.56[Formula: see text]nm grain sizes, respectively. Film thickness and average grain size have been increased with the deposition time and they were found to be negatively correlated with surface tension and parachor. The relationship between film thickness and parachor was found as [Formula: see text] whereas the relationship between average grain size and parachor was found as [Formula: see text] We also showed the relationships between parachor and some thin films parameters.

Synthesis of Corrugated Structured N Type Pbs Thin Film

2012 ◽  
Vol 500 ◽  
pp. 118-122 ◽  
Author(s):  
E.I. Anila ◽  
K.J. Saji ◽  
U.S. Sajeev
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Xrd Analysis ◽  
Dip Coating ◽  
Pbs Nanoparticles ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Type Band ◽  
Corrugated Structure ◽  
Power Measurements

PbS thin films with corrugated structure were synthesized on glass substrates by dip coating. The surface of the films was found to be corrugated. XRD analysis confirmed the formation of crystalline PbS nanoparticles with average grain size 14nm. From thermo power measurements, the conductivity of the samples was found to be of n type. Band gap of the films was estimated as 1.7eV from absorption spectra.

Young’s Modulus of Polysilicon Thin Film Evaluated by Finite Element Analysis

2007 ◽  
Vol 353-358 ◽  
pp. 2227-2230
Author(s):  
Kazuto Tanaka ◽  
Kohji Minoshima ◽  
Takehiro Imoto
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Finite Element ◽  
Young’S Modulus ◽  
Crystal Orientation ◽  
Young's Modulus ◽  
Fem Analysis ◽  
Front Surface ◽  
Element Analysis ◽  
Average Grain Size

To analyze the effect of the crystal orientations and the grain size on the Young's modulus of thin polysilicon microelements, two-dimensional finite element models in plain strain condition were developed using a Voronoi structure. The number of grains in a model of a 10 μm square area was changed from 23 to 1200. The grain size and the crystal orientation of the film were analyzed by means of an electron back-scattering diffraction pattern (EBSP) method. The average grain size of the front surface of the thin film was about 0.69 μm, which is almost equal to the grain size of the Voronoi model having 300 grains. From the results of EBSP analysis, the specimen had no oriented structure. Therefore, random crystal orientation was given to each grain of the FEM models. When the number of grains increased, the Young's modulus converged on about 171 GPa and its scatter caused by the different sets of the random orientation was reduced. The Young's modulus obtained by the FEM analysis was larger than the value obtained by the tensile tests.

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