Electrical Behavior of Graphene/SiO2/Silicon Material Irradiated by Electron for Field Effect Transistor (FET) Applications

2020 ◽  
Vol 1010 ◽  
pp. 339-345
Author(s):  
Ahmad Syahmi Zamzuri ◽  
Nur Idayu Ayob ◽  
Yusof Abdullah ◽  
Nur Ubaidah Saidin ◽  
Cik Rohaida Che Hak
Keyword(s):  
Single Layer ◽  
Chemical Vapor ◽  
Charge Trapping ◽  
High Energy ◽  
Single Layer Graphene ◽  
Electrical Characteristics ◽  
Current Voltage ◽  
Effect Transistor ◽  
High Energy Particles ◽  
Loop Form

In this paper, the detail study of electrical conductivity of single layer graphene (SLG) on silicon dioxide (SiO2)/Silicon substrate irradiated by high energy (MeV) electron is presented. The SLG samples prepared by Chemical Vapor Deposition (CVD) were irradiated by 50 kGy, 100 kGy and 200 kGy doses of electron radiation at energy voltage of 3 MeV. Current-Voltage (I-V) characteristics and conductivity of the pristine and irradiated graphene samples were measured and analysed using I-V measurement at room temperature. The non-linear I-V curves were clearly observed as the voltage reach to 2.0 V for non-irradiated and irradiated samples. This may be attributed to the non-uniform charges by high energy electron irradiation and poor metal contact of the sample. Hysteresis loop form at 2.0 V probably due to the to the charge trapping occurs at the interface of the graphene and SiO2. The reaction of high energy particles lead to creation of more carrier charges that contribute to the increment of conductivity compare to the small number of atom displacement of knock-on collisions with the nuclei of carbon atoms at higher dose. This study provides significant findings on the graphene electrical characteristics when irradiated with high energy (MeV) electron.

Epitaxial Chemical Vapor Deposition Growth of Single-Layer Graphene over Cobalt Film Crystallized on Sapphire

ACS Nano ◽  
2010 ◽  
Vol 4 (12) ◽  
pp. 7407-7414 ◽  
Author(s):  
Hiroki Ago ◽  
Yoshito Ito ◽  
Noriaki Mizuta ◽  
Kazuma Yoshida ◽  
Baoshan Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Chemical Vapor Deposition Growth ◽  
Cobalt Film ◽  
Layer Graphene

Performance of single layer graphene obtain by chemical vapor deposition on gold electrodes

2019 ◽  
Vol 98 ◽  
pp. 107510 ◽  
Author(s):  
Bianca Tincu ◽  
Ioana Demetrescu ◽  
Andrei Avram ◽  
Vasilica Tucureanu ◽  
Alina Matei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Gold Electrodes ◽  
Layer Graphene

Chemical Vapor Deposited Graphene for Opto-Electronic Applications

2016 ◽  
Vol 39 ◽  
pp. 57-68
Author(s):  
Vikram Passi ◽  
Amit Gahoi ◽  
Sarah Riazimehr ◽  
Stefan Wagner ◽  
Andreas Bablich ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Spectral Response ◽  
Single Layer ◽  
Chemical Vapor ◽  
Adsorbed Water ◽  
Single Layer Graphene ◽  
Ambient Conditions ◽  
Transfer Length ◽  
Type Silicon ◽  
P Type

In this work, fabrication and characterisation of graphene photodiodes and transfer length method structures is presented. Graphene growth is carried out using a thermal chemical vapor deposition process on copper foils and subsequently transferred onto silicon-dioxide/silicon substrate. Comparison of electrical and optical characteristics of the photodiodes, which are fabricated on both n-type and p-type silicon, is shown. The photodiodes fabricated on n-type silicon show good rectifying behaviour when compared with photodiodes fabricated on p-type silicon. Spectral response of graphene photodiodes is measured to be less than 0.2 mAW-1 which is attributed to the light absorbance of 2.3% for single layer graphene. Transfer length method device structures are also fabricated and contact resistance is calculated and plotted as a function of spacing between the contacts. The calculated contact resistance (RcW) is 0.87 kΩ.µm. The latter structures are also characterised under various ambient conditions, before and after annealing. The value of contact resistance reduces from 0.87 kΩ.µm to 0.75 kΩ.µm after annealing. This reduction is attributed to the improvement in bonding between graphene and metal. Measurements under vacuum show an increase in contact resistance which is attributed to the removal of adsorbed water molecules on the surface on graphene. The sheet resistivity of graphene is calculated to be between 1.17 kΩ/□ and 3.67 kΩ/□.

Oxidation of CVD Growth Single-Layer Graphene

2013 ◽  
Vol 790 ◽  
pp. 7-10 ◽  
Author(s):  
Hui Gao ◽  
Yin Zhang
Keyword(s):  
Vapor Deposition ◽  
Acid Treatment ◽  
Oxidation Process ◽  
Single Layer ◽  
Chemical Vapor ◽  
Strong Acid ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Potential Applications ◽  
Cvd Growth

Recently, oxidized chemical vapor deposition (CVD) growth graphene has drawn much attention due to its potential applications in the field of optoelectronics. In this article, we report a simple, scalable and efficient method to synthesize oxidized CVD growth single-layer graphene by the strong acid treatment. The results indicate that oxidation process successfully introduced more defects and oxygen-containing groups into the lattice of graphene.

scholarly journals Comparison Study of a-SiGe Solar Cells and Materials Deposited Using Different Hydrogen Dilution

2000 ◽  
Vol 609 ◽  
Author(s):  
H. Povolny ◽  
P. Agarwal ◽  
S. Han ◽  
X. Deng
Keyword(s):  
Stainless Steel ◽  
Solar Cells ◽  
Crystalline Silicon ◽  
Single Layer ◽  
Chemical Vapor ◽  
Hydrogen Dilution ◽  
Current Voltage ◽  
Ir Transmission ◽  
Cell Current ◽  
Steel Substrates

ABSTRACTA-SiGe n-i-p solar cells with i-layer deposited via plasma enhanced chemical vapor deposition (PECVD) with a germane to disilane ratio of 0.72 and hydrogen dilution R=(H2 flow)/(GeH4+Si2H6 flow) values of 1.7, 10, 30, 50, 120, 180 and 240 were deposited on stainless steel substrates. This germane to disilane ratio is what we typically use for the i-layer in the bottom cell of our standard triple-junction solar cells. Solar cell current-voltage curves (J-V) and quantum efficiency (QE) were measured for these devices. Light soaking tests were performed for these devices under 1 sun light intensity at 50° C. While device with R=30 showed the highest initial efficiency, the device with R=120 exhibit higher stabilized efficiency after 1000 hours of light soaking.Single-layer a-SiGe films (∼500 nm thick) were deposited under the same conditions as the i-layer of these devices on a variety of substrates including 7059 glass, crystalline silicon, and stainless steel for visible-IR transmission spectroscopy, FTIR, and hydrogen effusion studies. It is interesting to note 1) the H content in the film decreased with increasing R based on both the IR and H effusion measurements, and 2) while the H content changes significantly with different R, the change in Eg is relatively small. This is most likely due to a change in Ge content in the film for different R.

Laser direct writing of graphene patterns

2011 ◽  
Vol 1365 ◽  
Author(s):  
J.B. Park ◽  
W. Xiong ◽  
Z.Q. Xie ◽  
M. Mitchell ◽  
Y. Gao ◽  
...  
Keyword(s):  
Single Layer ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Single Layer Graphene ◽  
Direct Writing ◽  
Optically Pumped ◽  
Scan Speed ◽  
Thin Nickel ◽  
532 Nm

ABSTRACTRapid growth of single-layer graphene using laser-induced chemical vapor deposition (LCVD) with a visible CW laser (λ = 532 nm) irradiation at room temperature was investigated. In this study, an optically-pumped solid-state laser with a wavelength of 532 nm irradiates a thin nickel foil to induce a local temperature rise, thereby allowing the direct writing of graphene patterns about ~10 μm in width with high growth rate on precisely controlled positions. It is demonstrated that the fabrication of graphene patterns can be achieved with a single scan for each graphene pattern using LCVD with no annealing or preprocessing of the substrate. The scan speed reaches to about ~50 um/s, which indicates that the graphene pattern with 1:1 aspect ratio (x:y) can be grown in 0.2 sec. The patterned graphene on nickel was transferred to SiO2/Si substrate for fabrication of electrical circuits and sensor devices.

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