J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C

2005 ◽  
Vol 483-485 ◽  
pp. 629-632 ◽  
Author(s):  
Fabio Bergamini ◽  
Shailaja P. Rao ◽  
Stephen E. Saddow ◽  
Roberta Nipoti
Keyword(s):  
Leakage Current ◽  
Room Temperature ◽  
High Resistivity ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
Exponential Trend ◽  
Order Of Magnitude ◽  
Current Value ◽  
Post Implantation ◽  
Positive Results

Al+ implanted p+/n 4H-SiC diodes were realized via planar technology. The p+/n junctions were obtained by hot implantation at 400°C, followed by a post implantation annealing at 1600°C in Silane ambient. 136 diodes and other test structures were measured: the current voltage^curves and the resistivity of the implanted layer were investigated at room temperature. The majority of the measured diodes had a turn on voltage of about 1.75 V, a forward characteristic with exponential trend and ideality factor equal to 1.2, and a very low spread in the distribution of the reverse leakage current values at –100V. The average reverse leakage current value is (9.7 ± 0.4) × 10-9 A/cm2. The breakdown voltage of these diodes approached the theoretical value for the use epitaxial 4H-SiC layer, i.e. 0.75 – 1.0 kV. All these positive results are penalized by the high resistivity value of the implanted Al+ layer, which amounts to 11 W·cm that is one order of magnitude higher than the desired value.

Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

2005 ◽  
Vol 483-485 ◽  
pp. 625-628 ◽  
Author(s):  
Fabio Bergamini ◽  
Francesco Moscatelli ◽  
Mariaconcetta Canino ◽  
Antonella Poggi ◽  
Roberta Nipoti
Keyword(s):  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Electrical Characterization ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
Exponential Trend ◽  
Current Voltage Characteristics ◽  
Post Implantation

We report on the electrical characterization of Al+ implanted p+/n 4H-SiC diodes via a planar technology. Hot implantation at 400°C and post implantation annealing at 1600°C and 1650°C in high purity Argon ambient were done for the realization of p+/n diodes. The current voltage characteristics of the p+/n diodes and the resistivity of the implanted layer were measured at room temperature. The majority of the 136 measured diodes had a turn on voltage of 1.75 V for both annealing temperatures. The 1600°C annealed diodes showed an almost exponential forward characteristic with ideality factor equal to 1.4, an average reverse leakage current density equal to (4.8 ± 0.1)×10-9 A/cm2 at –100 V, and a break down voltage between 600 and 900V. The 1650°C annealed diodes often had forward “excess current component” that deviates from the ideal forward exponential trend. The average reverse leakage current density was equal to (2.7 ± 0.5)×10-8 A/cm2 at –100 V, and the breakdown voltage was between 700 and 1000V, i.e. it approached the theoretical value for the epitaxial 4H-SiC layer.

Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth

2005 ◽  
Vol 483-485 ◽  
pp. 159-162 ◽  
Author(s):  
Can Hua Li ◽  
Peter A. Losee ◽  
Joseph Seiler ◽  
T. Paul Chow ◽  
I. Bhat
Keyword(s):  
Epitaxial Growth ◽  
Leakage Current ◽  
Nitrogen Doping ◽  
Room Temperature ◽  
Optical Microscope ◽  
Dominant Mechanism ◽  
Selective Epitaxial Growth ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
P Type

Selective nitrogen doping of 4H-SiC by epitaxial growth using TaC as the high temperature mask has been demonstrated. Nomarski optical microscope and scanning electron microscope (SEM) were used to characterize selective growth of SiC. In addition, 250µm square shaped p-n junction diodes by selective n type epitaxial growth on p type epi layer were fabricated. The refilled fingers with different width were designed to vary the periphery/area (P/A) ratio. The effects of P/A ratio on the current-voltage (J-V) characteristics have been investigated. The ideality factor extracted from J-V characteristics is ≈2 at temperature range of 25-275°C, which indicates that the Shockley-Read-Hall recombination is the dominant mechanism in the conduction region. The reverse leakage current did not show dependence on P/A ratio for trench refilled diodes. The room temperature reverse leakage current density at 100V is less than 3.5×10-7 A/cm2 for all diodes. Also, the reverse leakage current did not increase significantly with temperature up to 275°C. The breakdown voltages measured at room temperature are about 450V and 400V for diodes without and with fingers, respectively.

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

2006 ◽  
Vol 527-529 ◽  
pp. 819-822
Author(s):  
Fabio Bergamini ◽  
Shailaja P. Rao ◽  
Antonella Poggi ◽  
Fabrizio Tamarri ◽  
Stephen E. Saddow ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Low Pressure ◽  
Cold Wall ◽  
Current Voltage Characteristic ◽  
Process Yield ◽  
Annealing Temperatures ◽  
Current Voltage ◽  
Post Implantation

This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400°C and post-implantation annealing in silane ambient in a cold-wall low-pressure CVD reactor. The Al depth profile was almost box shaped with a height of 6×1019 cm-3 and a depth of 160 nm. Implant anneals were performed in the temperature range from 1600°C to 1700°C. As the annealing temperature was increased, the silane flow rate was also increased. This annealing process yields a smooth surface with a roughness of the implanted area of 1.7 - 5.3 nm with increasing annealing temperature. The resistivity of the implanted layer, measured at room temperature, decreased for increasing annealing temperatures with a minimum value of 1.4 0-cm measured for the sample annealed at 1700°C. Considering only the current-voltage characteristic of a diode that could be modeled as an abrupt p/n junction within the frame of the Shockley theory, the diode process yield and the diode leakage current decreased, respectively, from 93% to 47% and from 2×10-7 Acm-2 to 1×10-8 Acm-2 at 100 V reverse bias, for increasing post implantation annealing temperature.

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p+n 4H-SiC Diodes

2008 ◽  
Vol 600-603 ◽  
pp. 1027-1030 ◽  
Author(s):  
Francesco Moscatelli ◽  
Fabio Bergamini ◽  
Antonella Poggi ◽  
Mara Passini ◽  
Fabrizio Tamarri ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Density ◽  
Room Temperature ◽  
Current Trend ◽  
Reverse Current ◽  
Metal Contacts ◽  
Leakage Currents ◽  
Forward Current ◽  
Annealing Effects ◽  
Order Of Magnitude

The current-voltage characteristics of Al+ implanted 4H-SiC p+n junctions show an important reduction of leakage currents with diode aging at room temperature. The case of a family of diodes that immediately after manufacture had forward current density increasing from 10-9 to 10-6 A/cm2 when biased from 0 and 2 V, and had a reverse leakage current density of @ 5×10-7 A/cm2 when biased at 100 V, is here presented and discussed. During diode manufacturing a post implantation annealing at 1600 °C for 30 min was followed by a 1000 °C 1 min treatment for metal contacts alloying. After 700 days of storage at room temperature, the diode reverse current density reached an asymptotical value of @ 4×10-11 A/cm2 that is four order of magnitude lower than the initial one. A 430 °C annealing that was made after 366 days is responsible of a decrease of one of these four orders of magnitude, but it does not interrupt the decreasing trend versus increasing time. This same annealing has been effective also for minimizing forward current for bias < 2 V, and sticking the diode turn-on voltage on 1.4 V and the current trend on an ideality factor of 2. These results show that in Al+ implanted 4H-SiC p+n junction there are defects that have an annihilation dynamic at very low temperatures, i.e. room temperature and 430 °C.

Mechanisms of Forward Current and Reverse Leakage Current in GaN-Based Blue Light Emitting Diodes

2013 ◽  
Vol 380-384 ◽  
pp. 3035-3038 ◽  
Author(s):  
Ren Jian ◽  
Li Sha Li ◽  
Da Wei Yan ◽  
Xiao Feng Gu
Keyword(s):  
Leakage Current ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Tunneling Current ◽  
Light Emitting ◽  
Reverse Leakage Current ◽  
Tunneling Mechanism ◽  
Forward Current ◽  
Current Voltage ◽  
High Bias

By measuring the current-voltage (I-V) characteristics in the temperature range of 100 K to 300 K, mechanisms of the forward tunneling current and the reverse leakage current of GaN-based blue light emitting diodes are analyzed. For the forward current, both the temperature-independent current slope and an ideality factor larger than 2 are typical features of the defect-assisted tunneling mechanism. For the reverse leakage current, the linear relationship between I and (V+Vbi)1/2 indicates a hopping conduction mechanism at low bias, while the power law I-V relationship suggests that the space charge limited current dominates the reverse leakage current at high bias.

4H-SiC Trench Schottky Diodes for Next Generation Products

2013 ◽  
Vol 740-742 ◽  
pp. 781-784 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Jennifer Duc ◽  
Van Mieczkowski ◽  
Brett Hull ◽  
Scott Allen ◽  
...  
Keyword(s):  
Leakage Current ◽  
Doping Concentration ◽  
Schottky Diodes ◽  
Size Reduction ◽  
High Current ◽  
Next Generation ◽  
Electrical Field ◽  
Reverse Leakage Current ◽  
Chip Size ◽  
Order Of Magnitude

A novel trench JBS structure has been developed to reduce the electrical field at the Schottky interface. Compared to the conventional planar JBS structure, the new design has reduced the reverse leakage current by 1 order of magnitude at rated voltage. The much reduced field at the Schottky interface allows an increase in the drift doping concentration, which enables a significant chip size reduction on next generation SiC Schottky diodes. This progress makes it possible to fabricate high current rating (>50 A) SiC diodes for module applications.

Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current

2018 ◽  
Vol 924 ◽  
pp. 601-604 ◽  
Author(s):  
Gary Dolny ◽  
Yang Sheng ◽  
Yue Fu ◽  
S. Li ◽  
Rahul Radhakrishnan ◽  
...  
Keyword(s):  
Leakage Current ◽  
Thermionic Emission ◽  
Tunneling Model ◽  
Reverse Leakage Current ◽  
Current Voltage ◽  
Wide Range ◽  
Trap Assisted Tunneling ◽  
Current Voltage Characteristics ◽  
Multi Level ◽  
Assisted Tunneling

The reverse-bias current-voltage characteristics of commercial 1200 V 4H-silicon-carbide junction barrier Schottky (SiC-JBS) rectifiers are studied both experimentally and through numerical simulation. The reverse leakage current measured from physical devices is observed to display both a strong temperature and field dependence. A model is presented to explain the observed behavior based on a combination of trap-assisted tunneling and a thermionic-emission mechanism through a potential barrier located at the metal-SiC interface. The study shows that a two-level trapping model can be necessary to properly explain the measured data. Excellent agreement between the models and the measurements is obtained over a wide range of bias and temperature.

Radiation Damage Study of Electrical Properties in GaN LEDs Diode after Electron Irradiation

2017 ◽  
Vol 888 ◽  
pp. 348-352 ◽  
Author(s):  
Yusof Abdullah ◽  
Anati Syahirah Hedzir ◽  
Nurul Fadzlin Hasbullah ◽  
Norasmahan Muridan ◽  
Cik Rohaida Che Hak ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Irradiation ◽  
Extreme Environment ◽  
Temperature Tolerance ◽  
Light Emitting ◽  
Reverse Leakage Current ◽  
High Temperature Tolerance ◽  
Current Voltage ◽  
Irradiation Process ◽  
Damage Study

Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor speed of 50 kGy per pass. Capacitance-voltage (C-V) and current-voltage (I-V) characterization for both pre and post irradiation samples was done. Both current and capacitance show decreasing while reverse leakage current increased after irradiation. The reverse leakage current revealed that the current were start leakage at 1.0 x10 -7 A and 1.0 x10-9 A for 1000 kGy and 1500 kGy irradiations respectively. The current-voltage graph indicated that the effect of electron irradiation on diode produced weak spots as defect cause leakage current. The traps and bulk defect is believed to contributed to the leakage current increased.

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