4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules

2006 ◽  
Vol 527-529 ◽  
pp. 1163-1166 ◽  
Author(s):  
Dominique Tournier ◽  
Peter Waind ◽  
Phillippe Godignon ◽  
L. Coulbeck ◽  
José Millan ◽  
...  
Keyword(s):  
High Voltage ◽  
Bulk Material ◽  
Schottky Diodes ◽  
Power Devices ◽  
Large Area ◽  
Aerospace Applications ◽  
Dc Characteristics ◽  
Igbt Modules ◽  
Device Processing ◽  
Manufacturing Yield

Due to the significant achievements in SiC bulk material growth and in SiC device processing technology, this semiconductor has received a great interest for power devices, particularly for SiC high-voltage Schottky barrier rectifiers. The main difference to ultra fast Si pin diodes lies in the absence of reverse recovery charge in SiC SBDs. This paper reports on 4.5kV-8A SiC Schottky diodes / Si-IGBT modules. The Schottky termination design and the fabrication process gives a manufacturing yield of 40% for large area devices on standard starting material. Modules have been successfully assembled, containing Si-IGBTs and 4.5kV-SiC Schottky diodes and characterized in both static and dynamic regimes. The forward dc characteristics of the modules show an on-resistance of 33mohm.cm2 @ room temperatue (RT) and a very low reverse leakage current density (JR < 10 5A/cm2 @ 3.5kV). An experimental breakdown voltage higher than 4.7kV has been measured in the air on polyimide passivated devices. This value corresponds to a junction termination efficiency of at least 80% according to the epitaxial properties. These SiC SBDs are well suited for high voltage, medium current, high frequency switching aerospace applications, matching perfectly as freewheeling diodes with Si IGBTs.

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

2008 ◽  
Vol 1069 ◽  
Author(s):  
Michael O'Loughlin ◽  
K. G. Irvine ◽  
J. J. Sumakeris ◽  
M. H. Armentrout ◽  
B. A. Hull ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Process Optimization ◽  
High Voltage ◽  
Defect Density ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Large Area ◽  
Device Processing ◽  
Defect Densities ◽  
Hot Wall Epitaxy

ABSTRACTThe growth of thick silicon carbide (SiC) epitaxial layers for large-area, high-power devices is described. Horizontal hot-wall epitaxial reactors with a capacity of three, 3-inch wafers have been employed to grow over 350 epitaxial layers greater than 100 μm thick. Using this style reactor, very good doping and thickness uniformity and run-to-run reproducibility have been demonstrated. Through a combination of reactor design and process optimization we have been able to achieve the routine production of thick epitaxial layers with morphological defect densities of around 1 cm−2. The low defect density epitaxial layers in synergy with improved substrates and SiC device processing have resulted in the production of 10 A, 10 kV junction barrier Schottky (JBS) diodes with good yield (61.3%).

High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

2007 ◽  
Vol 556-557 ◽  
pp. 873-876 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
Anthony G. O'Neill ◽  
...  
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Total Charge ◽  
Average Value ◽  
Barrier Heights ◽  
Device Processing ◽  
Additional Protection ◽  
Thick Layers ◽  
Contact Size

High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial 4H-SiC epitaxial wafers with 10, 20 and 45 +m thick n layers (with donor concentrations of 3×1015, 8×1014 and 8×1014 cm-3, respectively) were used. Boron implants annealed under argon flow at 1500°C for 30 minutes, without any additional protection of the SiC surface, were used to form JTE’s. After annealing, the total charge in the JTE was tuned by reactive ion etching. Diodes with molybdenum Schottky contacts exhibited maximum reverse voltages of 1.45, 3.3 and 6.7 kV, representing more than 80% of the ideal avalanche breakdown voltages and corresponding to a maximum parallel-plane electric field of 1.8 MV/cm. Diodes with a contact size of 1×1 mm were formed on 10 +m thick layers (production grade) using the same device processing. Characterisation of the diodes across a quarter of a 2-inch wafer gave an average value of 1.21 eV for barrier heights and 1.18 for ideality factors. The diodes exhibited blocking voltages (defined as the maximum voltage at which reverse current does not exceed 0.1 mA) higher than 1 kV with a yield of 21 %.

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC

MRS Advances ◽  
2019 ◽  
Vol 4 (44-45) ◽  
pp. 2377-2382
Author(s):  
J Pan ◽  
S. Afroz ◽  
N. Crain ◽  
W. Henning ◽  
J. Oliver ◽  
...  
Keyword(s):  
Power Electronics ◽  
Schottky Diode ◽  
High Voltage ◽  
Deep Level ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Doping Profile ◽  
Power Devices ◽  
Oxide Interface ◽  
Interfacial Defects

AbstractIn this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide interface trap densities (High Voltage HF MOS CV), measured the device channel doping profile for both 4H SiC and silicon, gate metal workfunction, and simulated the effects on DC/AC performance.

ОСОБЕННОСТИ РАДИАЦИОННОГО ПОВЕДЕНИЯ ВЫСОКОВОЛЬТНЫХ ПОЛУПРОВОДНИКОВЫХ ПРИБОРОВ НА 4H-SIC ПО ЭФФЕКТАМ НАКОПЛЕННОЙ ДОЗЫ И ОДИНОЧНЫМ ЭФФЕКТАМ ОТКАЗОВ

2020 ◽  
Vol 96 (3s) ◽  
pp. 609-611
Author(s):  
П.С. Громова ◽  
Г.Г. Давыдов
Keyword(s):  
High Voltage ◽  
Schottky Diodes ◽  
Power Devices ◽  
Electrical Parameters ◽  
Safe Operating

Экспериментально определена область безопасной работы высоковольтных диодов Шоттки на структурах 4H-SiC иностранного производства. Исследована деградация 4H-SiC изделий при воздействии накопленной дозы ионизирующего излучения. Проведено сравнение с аналогичными данными для высоковольтных приборов кремния. The paper highlights safe operating area for several types of high-voltage 4H-SiC Schottky diodes. Degradation of electrical parameters has been studied experimentally for several types of 4H-SiC power devices. Comparison with Si power devices has been carried out.

SiC Power Devices – An Overview

2004 ◽  
Vol 815 ◽  
Author(s):  
Anant Agarwal ◽  
Mrinal Das ◽  
Sumithra Krishnaswami ◽  
John Palmour ◽  
James Richmond ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Gate Oxide ◽  
Current Gain ◽  
Power Devices ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Power Mosfets ◽  
Voltage Instability ◽  
Igbt Modules ◽  
Near Future

ABSTRACTAn overview of SiC Power Devices is provided. Progress in 1200 V SiC Schottky diodes, 1200 V SiC BJTs, 10-20 kV SiC PiN diodes and 2 kV SiC Power MOSFETs will be described. SiC Schottky diodes have already been commercialized. The next step of inserting these diodes in Si IGBT modules is happening now. Emphasis is placed on the problems and issues at the SiC device/process interface which need to be urgently addressed such as the roughness created during the implant anneals, reliability of the gate oxide under positive and negative bias, low current gain of the BJTs, forward voltage instability in the pn junctions etc. Overcoming these issues in the near future will be critical to the successful commercialization of SiC devices.

Analysis and Design of 3.3 kV IGBT Based Three-Level DC/DC Converter with High-Frequency Isolation and Current Doubler Rectifier

2009 ◽  
Vol 25 (25) ◽  
pp. 103-108
Author(s):  
Dmitri Vinnikov ◽  
Tanel Jalakas ◽  
Indrek Roasto
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Power Converter ◽  
Rolling Stock ◽  
Analysis And Design ◽  
Auxiliary Power ◽  
Igbt Modules ◽  
Isolation Transformer ◽  
New Generation ◽  
Generation Power

Analysis and Design of 3.3 kV IGBT Based Three-Level DC/DC Converter with High-Frequency Isolation and Current Doubler RectifierThe paper presents the findings of a R&D project connected to the development of auxiliary power supply (APS) for the high-voltage DC-fed rolling stock applications. The aim was to design a new-generation power converter utilizing high-voltage IGBT modules, which can outpace the predecessors in terms of power density, i.e. to provide more power for smaller volumetric space. The topology proposed is 3.3 kV IGBT-based three-level neutral point clamped (NPC) half-bridge with high-frequency isolation transformer and current doubler rectifier that fulfils all the targets imposed by the designers. Despite an increased component count the proposed converter is very simple in design and operation. The paper provides an overview of the design with several recommendations and guidelines. Moreover, the simulation and experimental results are discussed and the performance evaluation of the proposed converter is presented.

Defect engineering in SiC technology for high-voltage power devices

2020 ◽  
Vol 13 (12) ◽  
pp. 120101
Author(s):  
Tsunenobu Kimoto ◽  
Heiji Watanabe
Keyword(s):  
High Voltage ◽  
Defect Engineering ◽  
Power Devices

scholarly journals Portable DC Supply Based on SiC Power Devices for High-Voltage Marx Generator

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 313
Author(s):  
Jacek Rąbkowski ◽  
Andrzej Łasica ◽  
Mariusz Zdanowski ◽  
Grzegorz Wrona ◽  
Jacek Starzyński
Keyword(s):  
High Voltage ◽  
Specific Area ◽  
Input Voltage ◽  
Marx Generator ◽  
Power Devices ◽  
Laboratory Setup ◽  
High Voltage Gain ◽  
Main Components ◽  
Two Stages ◽  
Very High

The paper describes major issues related to the design of a portable SiC-based DC supply developed for evaluation of a high-voltage Marx generator. This generator is developed to be a part of an electromagnetic cannon providing very high voltage and current pulses aiming at the destruction of electronics equipment in a specific area. The portable DC supply offers a very high voltage gain: input voltage is 24 V, while the generator requires supply voltages up to 50 kV. Thus, the system contains two stages designed on the basis of SiC power devices operating with frequencies up to 100 kHz. At first, the input voltage is boosted up to 400 V by a non-isolated double-boost converter, and then a resonant DC-DC converter with a special transformer elevates the voltage to the required level. In the paper, the main components of the laboratory setup are presented, and experimental results of the DC supply and whole system are also shown.

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