Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

2006 ◽  
Vol 527-529 ◽  
pp. 847-850
Author(s):  
Jaime A. Freitas ◽  
Kenneth A. Jones ◽  
Michael A. Derenge ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Variable Temperature ◽  
Stacking Faults ◽  
Emission Lines ◽  
Luminescence Spectra ◽  
Annealing Schedule ◽  
Defect Related Emission ◽  
Excitation Conditions ◽  
Ion Implanted

4H-SiC samples implanted at 600°C with 1020 cm-3 of B or B and C to a depth of ~0.5 μm, capped with (BN/AlN), and annealed at temperatures ranging from 1400°C – 1700°C were studied using variable temperature cathodoluminescence. New emission lines, which may be associated with stacking faults, were observed in the samples co-implanted with B and C, but not in the samples implanted only with B. For both the B and B and C co-implanted samples, the intensity of the line near 3.0 eV decreases with increasing annealing temperature, TA, and this line is not observed after annealing at 1700°C. The D1 defect related emission lines are observed in the luminescence spectra of all samples and their relative intensities seem to vary with the implantation-annealing schedule and excitation conditions.

scholarly journals Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

2022 ◽  
Author(s):  
hironori okumura ◽  
Yasuhiro Watanabe ◽  
Tomohiko Shibata ◽  
Kohei Yoshizawa ◽  
Akira Uedono ◽  
...  
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Electrical Conductance ◽  
Impurity Diffusion ◽  
Magnesium Ions ◽  
Sapphire Substrates ◽  
Silicon Implantation ◽  
Oxygen Concentrations ◽  
Ion Implanted

Abstract We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal AlN layers grown on sapphire substrates. By annealing at 1600oC, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300oC, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.

Modeling Dopant Redistribution During Rapid Thermal Annealing

1986 ◽  
Vol 71 ◽  
Author(s):  
Archie Y.C. Chan
Keyword(s):  
Finite Difference ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Junction Depth ◽  
Impurity Profile ◽  
Annealing Cycle ◽  
Dopant Redistribution ◽  
Ion Implanted

AbstractThe diffusion of ion-implanted dopants in silicon during rapid thermal annealing is modeled using the finite difference method.The change in impurity profile for an initial Pearson IV boron implant is negligible(less than 1 % change in junction depth) when the peak annealing temperature(TP ) is less than 1050 °C and its duration is shorter than 20 seconds. The dopant redistribution becomes significant(greater than 25 % change in junction depth) when Tp is greater than 1200 °C and its duration is longer than 40 seconds.The heatup and cooldown portions of the transient annealing cycle are found to have little effect on dopant redistribution provided that their rates are higher than 120 °C per second.

High-Effective Ion-Implanted 6H-SiC Light Emitting Diodes with λmax=535nm

1992 ◽  
Vol 279 ◽  
Author(s):  
A. V. Suvorov ◽  
P. A. Ivanov ◽  
V. N. Makarov ◽  
D. A. Plotkin ◽  
A. Ioffe
Keyword(s):  
Thermal Annealing ◽  
Annealing Temperature ◽  
Light Emitting Diodes ◽  
Light Power ◽  
Light Emitting ◽  
First Time ◽  
Ion Implanted

ABSTRACTThe p-n structures was formed by the implantation of Al ions into 6H-SiC n-type films and the thermal annealing. An energy of ions was in the range of 40–90 KeV, an annealing temperature -1700–2100K. We investigated the influence of implantation conditions over the defects electroluminescence of the obtained structures.After fabricating contacts and mesa-structures with areas 500–500μm our devices showed under the current of 20 mW:- integral light power 20μW,- λmax=535 nm, δλmax=80nm.For the first time was fabricated the green electroluminescence source on SiC with the value of efficiency approximated to one of the A3B5 structures, and after encapsulating it will be possible to obtain LEDs with an integral light power up to 80–100μW.

Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration

2020 ◽  
Vol 14 (1) ◽  
pp. 011005
Author(s):  
Takuya Nakashima ◽  
Emi Kano ◽  
Keita Kataoka ◽  
Shigeo Arai ◽  
Hideki Sakurai ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Ion Implanted

Pulsed thermal annealing of ion‐implanted silicon

1983 ◽  
Vol 54 (5) ◽  
pp. 2413-2418 ◽  
Author(s):  
P. D. Scovell ◽  
E. J. Spurgin
Keyword(s):  
Thermal Annealing ◽  
Ion Implanted

Nickel Oxide Coated on Pretreated MWCNTs as an Electrode for Supercapacitor

2013 ◽  
Vol 829 ◽  
pp. 654-658
Author(s):  
Lida Mahmoudi ◽  
Farzad Mahboubi ◽  
Moreteza Saghafi Yazdi
Keyword(s):  
Nickel Oxide ◽  
Thermal Annealing ◽  
Nickel Hydroxide ◽  
Annealing Temperature ◽  
Electrochemical Characteristics ◽  
Sem Images ◽  
Electroactive Materials ◽  
Nanotubular Structure ◽  
Individual Cnts ◽  
The Individual

Nickel oxide/carbon nanotubes (NiO/CNTs) composite materials for supercapacitor are prepared by chemically depositing of nickel hydroxide onto CNTs pretreated by ultrasonication and followed by thermal annealing at 200-300°C. A series of NiO/CNTs composites with different weight ratios of CNTs and different annealing temperature are synthesized via the same route. The scanning electron microscope (SEM) images show that the nucleation of the nickel hydroxide formed on the outer walls of CNTs due to ultrasonic cavitations, and then nickel oxide coated uniformly on the outer surface of the individual CNTs after thermal annealing. The NiO/CNTs electrode presents a maximum specific capacitance of 254 F/g as well as a good cycle life in 2 M KOH electrolyte. The good electrochemical characteristics of NiO/CNTs composite can be attributed to the three-dimensionally interconnected nanotubular structure with a thin film of electroactive materials.

scholarly journals Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams

2013 ◽  
Vol 103 (20) ◽  
pp. 203114 ◽  
Author(s):  
Servin Rathi ◽  
Jin-Hyung Park ◽  
In-yeal Lee ◽  
Min Jin Kim ◽  
Jeong Min Baik ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Joule Heating ◽  
Annealing Temperature ◽  
Insulator Metal Transition

Investigation of the influence of the mode of heat treatment of the initial powder on the efficiency of sintering zirconium ceramics by dilatometry

2021 ◽  
Vol 103 (3) ◽  
pp. 17-24
Author(s):  
S. Shevelev ◽  
◽  
E. Sheveleva ◽  
O. Stary ◽  
Keyword(s):  
Thermal Annealing ◽  
Zirconium Dioxide ◽  
Annealing Temperature ◽  
Average Particle Size ◽  
Average Particle ◽  
Sintered Ceramic ◽  
Tetragonal Modification ◽  
Thermal Sintering ◽  
Powder Compacts ◽  
High Degree

Using methods of synchronous thermal and X-ray structural analyzes applied to zirconium dioxide powders partially stabilized with yttrium obtained by chemical coprecipitation the processes of dehydration of these powders during annealing in air have been investigated. Using the dilatometry method, the regularities of compaction of powder compacts have been investigated with thermal sintering. It was found that the resulting powders mainly consist of the tetragonal modification zirconium dioxide and are nano-sized. The average particle size was 25 nm. The resulting powders are characterized by a high degree of agglomeration. It is shown that an increase in the thermal annealing temperature from 500 to 700ºС leads to partial baking of individual particles inside the agglomerate, and causes the formation of hard agglomerates, the presence of which complicates the processes of compaction and subsequent sintering. The presence of such agglomerates prevents the production of ceramics with high mechanical characteristics: density and porosity. Thermal annealing temperature increase leads to a decrease in the density of the sintered ceramic and a decrease in its hardness.

scholarly journals Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2248 ◽  
Author(s):  
Hadi Mahmodi ◽  
Md Hashim ◽  
Tetsuo Soga ◽  
Salman Alrokayan ◽  
Haseeb Khan ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Infrared Region ◽  
Alloy Formation ◽  
Phase Mixing ◽  
Si Substrates ◽  
Msm Photodetector

In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).

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