Effects of γ-Ray Irradiation on Structure and Properties of ZnO:Al Thin Film

2007 ◽  
Vol 546-549 ◽  
pp. 2137-2142 ◽  
Author(s):  
Wen Wen Wang ◽  
Tian Min Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Performance ◽  
Hall Effect Measurement ◽  
High Rate ◽  
X Ray Diffraction ◽  
Vacancy Defects ◽  
Structure Morphology ◽  
Before And After ◽  
Γ Ray

ZnO:Al(ZAO) thin film is a kind of transparent conductive functional material which has a potential application in the solar cell and Atom Oxygen resisting systems of spacecrafts. High performance ZAO thin films were prepared by reactive magnetron sputtering and then irradiated by γ-ray with different dose or rate of irradiation. The as-deposited sample and irradiated ones were characterized by X-ray Diffraction, Scanning Electron Microscopy and Hall-effect measurement to investigate the dependences of the structure, morphology and electrical properties of ZAO on the dose and rate of γ-ray irradiation. Measurement of Positron Annihilation Doppler-Broadening Spectroscopy was carried out to study the variation of the defects in ZAO thin films before and after irradiation. It is indicated that γ-ray will excite the carriers, which are electrons in ZAO. A high rate of γ-ray irradiation could slightly destroy the bonds of Zn-O and decrease the crystallinity, while the effect of low rate irradiation is similar to heat annealing and increase the crystallinity of ZAO thin films. γ-ray has no apparent influences on the negative vacancy defects in ZAO thin film.

Enhancement of Ferroelectricity and Magnetoelectric Effect of BiFeO3 Thin Films on Membrane Structure

2006 ◽  
Vol 966 ◽  
Author(s):  
Seiji Nakashima ◽  
Kwi-Young Yun ◽  
Yoshitaka Nakamura ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Membrane Structure ◽  
Remanent Polarization ◽  
Hysteresis Loops ◽  
X Ray Diffraction ◽  
Multiferroic Bifeo ◽  
Before And After ◽  
Diffraction Peaks ◽  
Ferroelectric Hysteresis

ABSTRACTMultiferroic BiFeO3 thin films have been prepared on Pt/TiO2/SiO2/thick (200 μm) and membrane (15 μm) Si substrate by pulsed laser deposition (PLD) to confirm the influence of stress from substrate. Si membrane was obtained by etching using reactive ion etching (RIE) until thickness is to be 15 μm. The X-ray diffraction peaks of BiFeO3 thin film on Pt/TiO2/SiO2/Si (15 μm) membrane substrate slightly shift to lower angles, compared to those on Pt/TiO2/SiO2/Si (200 μm) substrate. Ferroelectric hysteresis loops were also measured at 150 K before and after Si etching by RIE. The BiFeO3 thin film on the Pt/TiO2/SiO2/Si (15 μm) membrane structure shows remanent polarization (Pr) of 95 μC/cm2 for a maximum applied voltage of 18 V, which is larger than Pr = 71 μC/cm2 of BiFeO3 thin film on Pt/TiO2/SiO2/Si (200 μm) substrate at the same measurement conditions. Under magnetic field of 1.1 T, remanent polarization (Pr) of BiFeO3 thin film on Pt/TiO2/SiO2/Si (15 μm) membrane structure increased from 95 μC/cm2 to 101 μC/cm2 at 150 K due to stress relaxation of BiFeO3 thin film.

High Performance of Na2/3Ni1/4Mn3/4O2 Thin-Film Cathode for Sodium-Ion Micro-Batteries

2017 ◽  
Vol 864 ◽  
pp. 84-88
Author(s):  
Qian Peng ◽  
Guang Yang
Keyword(s):  
Thin Film ◽  
Discharge Capacity ◽  
Current Density ◽  
High Performance ◽  
Rate Capability ◽  
Reversible Capacity ◽  
High Rate ◽  
X Ray Diffraction ◽  
Measurement Results ◽  
Steel Substrates

Thin films of Na2/3Ni1/4Mn3/4O2 were prepared on stainless steel substrates by pulsed laser deposition technique. X-ray diffraction and Field-emission Scanning Electron Microscope results show that the thin film deposited at 750°C is highly preferred orientation with homogeneous nanoscale particles. Galvanostatic charge/discharge measurement results reveal that the reversible capacity retention is 91% after 30 cycles with a high initial discharge capacity of 175.3 mAhg-1 at a current density of 13 mAg-1. It also exhibits excellent rate capability, as the current density increases to 260 mAg-1, about 80% of its initial capacity can be retained. After the high rate measurement, the NNMO electrode can deliver a discharge capacity of 110.4 mAhg-1 when the current density was reduced back to 13 mAg-1.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Physical Properties Of Single-Phase Skutterudite Thin-Films (CoSb3 and IrSb3)

1998 ◽  
Vol 545 ◽  
Author(s):  
J. C. Caylor ◽  
A. M. Stacy ◽  
T. Sands ◽  
R. Gronsky
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Parameters ◽  
X Ray Diffraction ◽  
Adhesion Properties ◽  
Rutherford Back Scattering ◽  
Phonon Component ◽  
Transmission Electron ◽  
Structure Morphology ◽  
High Vapor

AbstractBulk skutterudite phases based on the CoAs3 structure have yielded compositions with a high thermoelectric figure-of-merit (“ZT”) through the use of doping and substitutional alloying. It is postulated that further enhancements in ZT may be attained in artificially structured skutterudites by engineering the microstructure to enhance carrier mobility while suppressing the phonon component of the thermal conductivity. In this work the growth and properties of singlephase CoSb3 and IrSb3 skutterudite thin films are reported. The films are synthesized by pulsed laser deposition (PLD) where the crystallinity can be controlled by the deposition temperature. Powder X-ray diffraction (PXRD), Transmission electron microscopy (TEM) and Rutherford- Back Scattering (RBS) were used to probe phase, structure, morphology and stoichiometry of the films as functions of growth parameters and substrate type. A substrate temperature of 250°C was found to be optimal for the deposition of the skutterudites from stoichiometric targets. Above this temperature the film is depleted of antimony due to its high vapor pressure eventually reaching a composition where the skutterudite structure is no longer stable. However, when films are grown from antimony-rich targets the substrate temperature can be increased to at least 350°C while maintaining the skutterudite phase. In addition, adhesion properties of the films are explored in terms of the growth mode and substrate interaction. Finally, preliminary room temperature electrical and thermal measurements are reported.

Thermal conversion of CBD grown ZnS thin films to ZnO

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kooliyankal Naseema ◽  
Kaniyamkandy Ribin ◽  
Nidiyanga Navya ◽  
Prasoon Prasannan
Keyword(s):  
Thin Films ◽  
Low Cost ◽  
Thermal Conversion ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Anion Substitution ◽  
Nano Crystalline ◽  
Before And After ◽  
Uv Visible

AbstractNano crystalline zinc sulfide thin films were deposited onto glass substrates by chemical bath deposition method. One of the samples was annealed at 300 °C for 2 h in air using a muffle furnace. The prepared thin films were investigated by X-ray diffraction (XRD), UV–visible spectroscopy (UV–vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM) and Raman spectroscopy (FT-R) studies before and after annealing. The analysis confirmed the thermal-induced anion substitution and conversion of ZnS crystal to ZnO wurtzite crystal. XRD pattern showed that these films were phase pure and polycrystalline in nature. Optical band gap was found to be 3.86 eV for ZnS and 3.21 eV for ZnO. The films prepared by this simple, low-cost technique are suitable for photovoltaic and optoelectronic applications.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

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