Problems with Synthesis of Chalcopyrite CuIn1-xBxSe2

2009 ◽  
Vol 609 ◽  
pp. 33-36 ◽  
Author(s):  
J. Olejníček ◽  
S.A. Darveau ◽  
C.L. Exstrom ◽  
Rodney J. Soukup ◽  
Ned J. Ianno ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Band Gap ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Single Junction ◽  
X Ray ◽  
First Results ◽  
Precursor Alloy

Thin films of CuIn1-xBxSe2 (CIBS) as absorption layer in single-junction solar cells can potentially grant a higher band gap in comparison with other studied chalcopyrite materials like CuIn1-xGaxSe2 (CIGS) and CuIn1-xAlxSe2 (CIAS). The higher band gap near optimum value ~ 1.4 eV can help to achieve higher efficiency (today 19.5% for CuIn0.74Ga0.26Se2). In this paper are described first results of experiments with effort to produce CIBS films by selenization of CuInB precursor alloy in Se vapors. Resulting material was analyzed by Raman spectroscopy, X-ray diffraction, and Auger electron spectroscopy. Measurements show that formation of CIBS layer is complicated by forming of pure CuInSe2 layer with unwanted Cu2-xSe phases and by accumulation boron near to the substrate.

Effect of Heat Treatments on the Structural and Mechanical Properties of Ti Thin Films Deposited on Steel Substrates by PVD Method

2010 ◽  
Vol 297-301 ◽  
pp. 88-92 ◽  
Author(s):  
R. Gheriani ◽  
Rachid Halimi
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Annealing Temperature ◽  
Micro Hardness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Thin Films ◽  
Steel Substrates ◽  
Technological Interest

Titanium carbides are well known materials with great scientific and technological interest. The applications of these materials take advantage of the fact that they are very hard, refractory and that they have metallic properties. In this work, we have studied the influence of the heat treatment temperatures (400-1000°C) on the interaction between the titanium thin films and steel substrates. Steel substrates, 100C6 type (AFNOR norms) containing approximately 1 wt % of carbon were coated at 200°C with titanium thin films by magnetron sputtering. The samples were characterized by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). Vikers micro-hardness measurements carried out on the annealed samples showed that the micro-hardness increases with annealing temperature, reaches a maximum (3500 kg/mm2), then decreases progressively. The growth of micro-hardness is due to the diffusion of the carbon, and to the formation of titanium carbide. However, the decrease of micro-hardness is associated with the diffusion of iron and the formation of iron oxide (Fe2O3). At higher temperatures, we note the formation of titanium dioxide (TiO2).

DEPOSITION OF AlN AND OXIDIZED AlN THIN-FILMS BY REACTIVE SPUTTERING: CORRELATION BETWEEN FILM GROWTH AND DEPOSITION PARAMETERS

2008 ◽  
Vol 15 (04) ◽  
pp. 453-458 ◽  
Author(s):  
MANUEL GARCÍA-MÉNDEZ ◽  
SANTOS MORALES-RODRÍGUEZ ◽  
LUCIANO ELIÉZER RAMÍREZ ◽  
EDUARDO G. PÉREZ-TIJERINA
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Film Growth ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Zinc Blend ◽  
Surface Level ◽  
X Ray ◽  
Deposition Parameters

A set of AlN films were deposited by reactive direct current (DC) magnetron sputtering. Films were analyzed with X-ray diffraction and Auger Electron Spectroscopy (AES). There is a correlation between deposition parameters and crystal growth. Depending on the deposition parameters, films can present a hexagonal würzite (P6mm) or cubic zinc-blend (Fm3m) microstructure. Oxygen appears to induce on films a degree of amorphous growth and a distortion of the lattice parameters. For the film with cubic microstructure, AES transitions detected near the surface level at 56 eV and 66 eV were attributed to aluminum-oxide ( Al xOy), AlN , and metallic Al .

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Characterization of hydrofluoric acid treated Y–Ba–Cu–O oxides

1989 ◽  
Vol 4 (6) ◽  
pp. 1320-1325 ◽  
Author(s):  
Q. X. Jia ◽  
W. A. Anderson
Keyword(s):  
Hydrofluoric Acid ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Surface Passivation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance ◽  
Reaction With Water ◽  
Scanning Electron

Effects of hydrofluoric acid (HF) treatment on the properties of Y–Ba–Cu–O oxides were investigated. No obvious etching of bulk Y–Ba–Cu–O and no degradation of zero resistance temperature were observed even though the oxides were placed into 49% HF solution for up to 20 h. Surface passivation of Y–Ba–Cu–O due to HF immersion was verified by subsequent immersion of Y–Ba–Cu–O in water. A thin layer of amorphous fluoride formed on the surface of the Y–Ba–Cu–O during HF treatment, which limited further reaction between Y–Ba–Cu–O and HF, and later reaction with water. Thin film Y–Ba–Cu–O was passivated by HF vapors and showed no degradation in Tc-zero after 30 min immersion in water. The properties of the surface layer of Y–Ba–Cu–O oxide after HF treatment are reported from Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy studies.

scholarly journals Spin transitions in La0.7 Ba0.3CoO3 thin films revealed by combining Raman spectroscopy and X-ray diffraction

2016 ◽  
Vol 120 (1) ◽  
pp. 015308 ◽  
Author(s):  
Zied Othmen ◽  
Olivier Copie ◽  
Kais Daoudi ◽  
Michel Boudard ◽  
Pascale Gemeiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spin Transitions
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