Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration

2010 ◽  
Vol 645-648 ◽  
pp. 503-506 ◽  
Author(s):  
Yoshinori Iwasaki ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interface Properties ◽  
Dangling Bonds ◽  
X Ray ◽  
Plasma Pretreatment

We have investigated NH3 plasma pretreatment for Si- and C-face 4H-SiC and characterized interface properties and bond configuration. It is revealed that the NH3 plasma pretreatment is effective to reduce interface state density on C-face. From X-ray photoelectron spectroscopy (XPS) measurements, N- and H-related C bonds were observed. N and H passivate C-related defects and dangling bonds, resulting in improved interface properties.

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

Electronic passivation of GaP surfaces using (NH4)2S treatment

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1050-1056 ◽  
Author(s):  
L. Jedral ◽  
H. E. Ruda ◽  
R. Sodhi ◽  
H. Ma ◽  
L. Mannik
Keyword(s):  
Surface Treatment ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
X Ray ◽  
Native Oxides ◽  
Treatment Changes ◽  
Time Changes ◽  
First Time

The influence of (NH4)2S treatment on the surface properties of GaP is presented for the first time. Changes in the chemical composition and Fermi level position are characterized using X-ray photoelectron spectroscopy. These measurements show that after surface treatment, the GaP surface is free of native oxides. A strong enhancement (~ 50 times) in the cathodoluminescent efficiency was observed for sulfur passivated samples. Schottky diode characteristics were used to reveal changes in the barrier height and interface state density due to surface treatment. Changes in carrier concentration were also found to be reflected in measured Raman spectra. The passivation mechanism is also briefly discussed.

Characterization of Rapid Nitrided Ultrathin SiO2 Films By XPS and SCS

1995 ◽  
Vol 387 ◽  
Author(s):  
H. Yan ◽  
S. P. Wong ◽  
R. W. M. Chan ◽  
R. W. M. Kwok ◽  
W. X. Feng
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interface State ◽  
Dielectric Surface ◽  
State Density ◽  
Breakdown Field ◽  
Silicon Substrates ◽  
X Ray ◽  
Dielectric Layers ◽  
Breakdown Field Strength

AbstractUltrathin SiO2 dielectric layers of thickness less than 100Å on silicon substrates have been prepared by dry oxidation and rapid thermal nitirdation (RTN). In this study, X-ray photoelectron spectroscopy and surface charge spectroscopy had been applied to study the nitrogen distribution in the dielectric layers and the change in the interface state density (Dit) due to the nitrogen incorporation. It is found that most of the incorporated nitrogen is located near the dielectric/Si interface and the nitrogen content increases with the RTN temperature. For the electrical properties, we found that the Dit, after RTN slightly decreases and the breakdown field strength deduced from the dielectric surface potential was enhanced by the incorporation of nitrogen.

Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures

2016 ◽  
Vol 858 ◽  
pp. 627-630 ◽  
Author(s):  
Atthawut Chanthaphan ◽  
Yen Hung Cheng ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe
Keyword(s):  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Electrical Characterization ◽  
Practical Method ◽  
Interface State ◽  
State Density ◽  
Interface Quality ◽  
Mos Capacitors ◽  
X Ray ◽  
Mos Devices

The efficient and practical method for SiO2/4H-SiC interface improvement using post-oxidation annealing (POA) in pure N2 ambient was studied by means of x-ray photoelectron spectroscopy (XPS) analysis and electrical characterization. SiC-MOS capacitors with slope-shaped thermal oxides were used to investigate optimal conditions for interface nitridation. It was found that the amount of nitrogen atoms incorporated into the interfaces increased when raised the annealing temperature up to 1400°C, and thin oxide (< 30 nm) was used. Furthermore, N2-POA at 1400°C was proven to be very promising as equivalent to NO-POA in terms of reduced interface state density of SiC-MOS devices.

scholarly journals Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 955
Author(s):  
Qide Yao ◽  
Xueli Ma ◽  
Hanxiang Wang ◽  
Yanrong Wang ◽  
Guilei Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Direct Oxidation ◽  
Ozone Oxidation ◽  
X Ray ◽  
Interface Passivation ◽  
Metal Oxide Semiconductor Capacitor

The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of the HfO2/Si0.7Ge0.3 stack MOS (Metal-Oxide-Semiconductor) capacitor under ozone direct oxidation (pre-O sample) increases obviously. This is because the tiny amounts of GeOx in the formed interlayer (IL) oxide layer are more likely to diffuse into HfO2 and cause the HfO2/Si0.7Ge0.3 interface to deteriorate. Moreover, a post-HfO2-deposition (post-O) ozone indirect oxidation is proposed for the HfO2/Si0.7Ge0.3 stack; it is found that compared with pre-O sample, the Dit of the post-O sample decreases by about 50% due to less GeOx available in the IL layer. This is because the amount of oxygen atoms reaching the interface of HfO2/Si0.7Ge0.3 decreases and the thickness of IL in the post-O sample also decreases. To further reduce the Dit of the HfO2/Si0.7Ge0.3 interface, a Si-cap passivation with the optimal thickness of 1 nm is developed and an excellent HfO2/Si0.7Ge0.3 interface with Dit of 1.53 × 1011 eV−1cm−2 @ E−Ev = 0.36 eV is attained. After detailed analysis of the chemical structure of the HfO2/IL/Si-cap/Si0.7Ge0.3 using X-ray photoelectron spectroscopy (XPS), it is confirmed that the excellent HfO2/Si0.7Ge0.3 interface is realized by preventing the formation of Hf-silicate/Hf-germanate and Si oxide originating from the reaction between HfO2 and Si0.7Ge0.3 substrate.

Passivation of the SiNx/GaAs (110) interface

1996 ◽  
Vol 74 (S1) ◽  
pp. 100-103
Author(s):  
L. J. Huang ◽  
K. Rajesh ◽  
W. M. Lau ◽  
D. Landheer ◽  
J. -M. Baribeau ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Gate Insulator ◽  
X Ray ◽  
Interface Control ◽  
Cv Measurements ◽  
Interface Structures ◽  
Control Layer

Passivation of the SiNx/GaAs (110) interface was performed with different surface treatments including sulphur passivation and a Si or Si/Ge interface control layer on sulphur-passivated surfaces prior to silicon nitride deposition. The interface state density was measured with capacitance–voltage (CV) measurements of metal–insulator–semiconductor capacitors fabricated on the passivated surfaces using remote plasma-deposited silicon nitride as the gate insulator. The interface structures of the capacitors were analyzed by X-ray reflectivity and X-ray photoemission spectroscopy. It was found that the Si/Ge/S multilayer passivation approach led to the best CV results for an n-type substrate. The results also show that sulphur passivation could suppress As(Ga) segregation and that the interfacial atomic structure was not the only factor that determines the passivation. By comparing the quasi-static and high-frequency (1 MHz) CV data, we found that the minimum interface state density of the fabricated capacitors made on n-type substrates was about 1012 eV−1 cm−2.

scholarly journals Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO2/SiC MIS Structure

2013 ◽  
Vol 740-742 ◽  
pp. 805-808 ◽  
Author(s):  
Mitsunori Hemmi ◽  
Takashi Sakai ◽  
Tomohiko Yamakami ◽  
Rinpei Hayashibe ◽  
Kiichi Kamimura
Keyword(s):  
Thermal Decomposition ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mis Structure ◽  
Interface Properties ◽  
Post Deposition Annealing ◽  
Direct Nitridation ◽  
Post Deposition

The SiO2 layer was deposited on the 4H-SiC Si face by the thermal decomposition of tetraethylorthosilicate(TEOS) in N2 atmosphere to from MIS diodes. The post deposition annealing was effective to improve the interface properties. The interface state density of the deposited SiO2/SiC MIS structure was estimated to be the order of 1011 cm-2eV-1 by Terman method. The direct nitridation of SiC surface prior to the deposition of the SiO2 layer was effective to reduce the interface state density.

SiO2/SiC Interface Properties on Various Surface Orientations

2002 ◽  
Vol 742 ◽  
Author(s):  
Hiroshi Yano ◽  
Taichi Hirao ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Conduction Band ◽  
Room Temperature ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Properties ◽  
Mos Capacitors ◽  
Channel Mobility

ABSTRACTThe interface properties of MOS capacitors and MOSFETs were characterized using the (0001), (1120), and (0338) faces of 4H-SiC. (0001) and (1120) correspond to (111) and (110) in cubic structure. (0338) is semi-equivalent to (100). The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements of n-type MOS capacitors at a low temperature and room temperature. The (0338) face indicated the smallest interface state density near the conduction band edge and highest channel mobility in n-channel MOSFETs among these faces.

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