Preparation and Characterization of CdTe/Porous Silicon System

2010 ◽  
Vol 663-665 ◽  
pp. 64-67
Author(s):  
Xiao Yi Lv ◽  
Wen Jie Chen ◽  
Jun Wei Hou ◽  
Zhen Hong Jia ◽  
Fu Ru Zhong ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Vapor Deposition ◽  
Composite System ◽  
Chemical Vapor ◽  
Photoluminescence Properties ◽  
Standard Pattern ◽  
Xrd Pattern ◽  
Strong Luminescence ◽  
Silicon System

We report the structural and photoluminescence properties of CdTe/Porous silicon (PS) composite system prepared by chemical vapor deposition. The XRD pattern accord with the standard pattern of cadmium telluride of the samples was evaluated and the morphology of CdTe particles was characterized by scanning electron microscopy. The composite sample gives a strong luminescence and the mechanism of photoluminescence with CdTe/PS has also been discussed.

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3

Characterization of ZnO Films Grown by Chemical Vapor Deposition as Active Layer in Pseudo-MOSFET

2021 ◽  
Author(s):  
A. Ramos-Carrazco ◽  
J. A. Gallardo-Cubedo ◽  
A. Vera-Marquina ◽  
A. L. Leal-Cruz ◽  
J. R. Noriega ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Active Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Zno Films

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Sign in / Sign up

Export Citation Format

Share Document