Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C
2011 ◽
Vol 679-680
◽
pp. 237-240
Keyword(s):
Low doped epitaxial films of 4H SiC irradiated at 1 MeV and electron fluences of 1×1015 cm-2, 3×1015 cm-2 and 1×1016 cm-2 have been used to measure temperatures in two temperature intervals: 580°C to 640°C and 1220°C to 1320°C. Possible accuracy of the temperature measurements is judged to be better than 10 degrees Centigrade. Similar measurements should be possible from 100°C to 1500°C.
2011 ◽
Vol 264-265
◽
pp. 1538-1544
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2008 ◽
Vol 600-603
◽
pp. 541-544
Keyword(s):
2010 ◽
Vol 27
(8)
◽
pp. 1403-1409
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Keyword(s):
1991 ◽
Vol 23
(2)
◽
pp. 175-194
◽
Keyword(s):