Structure and Mechanical Properties of AlCrN Thin Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 695 ◽  
pp. 182-185 ◽  
Author(s):  
T.T.H. Pham ◽  
Eric Le Bourhis ◽  
P. Goudeau ◽  
P. Guérin
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Lattice Parameter ◽  
Fiber Texture ◽  
Chemical Compositions ◽  
Compressive Stresses ◽  
Curvature Measurements ◽  
Hardness Values ◽  
Fcc Structure ◽  
Deposition Conditions

A magnetron sputtering system was used to deposit AlCrN thin films. Chemical compositions of the films were determined by both EDXS and RBS, while structures analyses were conducted by XRD in a Seifert XRD3000 diffractometer. Macroscopic residual stresses of films were determined by curvature measurements using DEKTAK IIA profilometer, while in-grain stresses were extracted by the “sin²Y method” from XRD measurements. A nanoindenter from CSM (Switzerland) was used to determine the hardness of the films. A CrN type FCC structure was obtained with a strong (200) fiber texture for the range of compositions Al1-xCrxNy(0.56 < x< 0.89) of interest here. The global stresses were compressive for all FCC films resulting from the high energetic deposition conditions used. In-grain compressive stresses were determined for the films with thickness < 500nm, while thicker films (> 500nm) showed tensile in-grain stresses. Stress-free lattice parameter a0strongly decreased from 4.13 to 3.97 A°. Hardness values were obtained in a range extending from 17 to 27 GPa with an increase obtained as Cr content increases and correlated to the residual-stress level.

Stress and Microstructural Evolution of Lpcvd Polysilicon Thin Films During High Temperature Annealing

1996 ◽  
Vol 441 ◽  
Author(s):  
Chia-Liang Yu ◽  
Paul A. Flinn ◽  
Seok-Hee Lee ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Stress Relaxation ◽  
Deposition Temperature ◽  
Stress Generation ◽  
Deformation Model ◽  
Silicon Thin Films ◽  
Compressive Stresses ◽  
Polysilicon Films ◽  
Curvature Measurements

AbstractThe mechanisms of stress generation and stress relaxation of LPCVD silicon thin films were studied using high temperature wafer curvature measurements. The stresses generated during depositions are measured as functions of deposition temperature and microstructure. Amorphous silicon deposited with a compressive stress shows a large stress change toward tensile during crystallization. The stress relaxation of polysilicon films deposited with tensile stresses can be described by a deformation model from Ashby and Frost [1]. The polysilicon films deposited with compressive stresses have hydrogen incorporated during deposition and shows hydrogen evolution during thermal cycles.

Physical properties of spinel iron oxide thin films

1988 ◽  
Vol 3 (2) ◽  
pp. 344-350 ◽  
Author(s):  
C. Ortiz ◽  
G. Lim ◽  
M. M. Chen ◽  
G. Castillo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Physical Properties ◽  
Room Temperature ◽  
Lattice Parameter ◽  
Infrared Transmission ◽  
Transmission Properties ◽  
Annealing Conditions ◽  
Deposition Conditions

This paper describes the complexity of the spinel iron oxides in thin-film configuration. First, the experimental deposition conditions are determined for the parameters of substrate temperature and oxygen flow such that only the “Fe3O4” phase is formed. Then a study is made of how the structural (grain size, lattice parameter, texture), magnetic (M), and optical (visible and infrared transmission) properties of the films depend on the deposition and postdeposition (air annealing) conditions. The experimental deposition region is defined where the films have the most similar physical properties to bulk Fe3O4 and subsequently, after annealing, to bulk gamma Fe2O3. Finally, a discussion is presented of a model that accounts for the anomalous, low values of the magnetic moment for the samples deposited at room temperature. The model proposes an overpopulation of the iron tetrahedral A sites.

Microstructure and Mechanical Properties of Cr1-xAlxN Coating

2012 ◽  
Vol 531 ◽  
pp. 3-6
Author(s):  
C.L. Zhong ◽  
L.E. Luo
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Lattice Parameter ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Al Content ◽  
Compound Coating ◽  
Cubic Structure

A series of Cr1-xAlxN coatings were deposited by reactive magnetron sputtering. The content, microstructure and the hardness of the thin films were characterized respectively with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD) and nanoindentor. The effect of Al content on the microstructure and hardness was studied. It was found that Cr1-xAlxN compound coating exhibits a cubic structure with (1 1 1) preferred orientations and that the lattice parameter of Cr1-xAlxN coatings decrease with the increase of Al content. The hardness of Cr1-xAlxN compound coating is higher than that of CrN and increases with the increase of Al content.

Growth of Sr1−xNdxCuOy Thin Films by Rf-Magnetron Sputtering and Pulsed-Laser Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
Nobuyuki Sugii ◽  
Michiharu Ichikawa ◽  
Koichi Kubo ◽  
Takeshi Sakurai ◽  
Kiyoshi Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Layer Structure ◽  
Pulsed Laser ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
Infinite Layer ◽  
Sputter Deposited

ABSTRACTSr1−xNdxCuOy thin films are grown on SrTiO3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an “infinite-layer” structure whose lattice constants are: α=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr14CuO24O41 structure. The laser-deposited films of Sr1−xNdxCuOy with x≤.075 were single phase of the “infinite-layer” structure. The lattice parameter c decreased and the lattice parameter αincreased, as the Nd content, x, increased. The films with α=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K.

Surface Characteristics of Ni-Mn-Fe-Ga Sputtered Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2290-2295
Author(s):  
Hai Bo Wang ◽  
Jin Yong Xu ◽  
Wei Cai
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Average Particle Size ◽  
Surface Characteristics ◽  
Crystallographic Structure ◽  
Chemical Compositions ◽  
Average Particle ◽  
Alloy Thin Film ◽  
X Ray ◽  
Sputtering Power

The Ni-Mn-Fe-Ga shape memory alloy thin film was deposited onto silicon substrates by using radio-frequency (R.F.) magnetron sputtering technique. Chemical composition, surface morphology and crystallographic structure were systematically investigated by means of X-ray fluorescence (XRF), atomic force microscope (AFM) and X-ray diffraction (XRD). The experimental results show that the magnetron sputtering process has remarkable influence on the chemical compositions and surface characteristics of Ni-Mn-Fe-Ga alloy thin films. As the sputtering power ranging between 245W and 405W, Ni content of the thin films decreases with the sputtering power increasing, whereas Mn and Fe contents increase with increasing the sputtering power and Ga content almost keep a constant. The surface roughness and the average particle size of thin films increase with the increase of Ar working pressure and sputtering power. The film deposited at room temperature has a cubic L21 structure.

Thermal oxidation mechanism and stress evolution in Ta thin films

2010 ◽  
Vol 25 (6) ◽  
pp. 1080-1086 ◽  
Author(s):  
Yusung Jin ◽  
Jae Yong Song ◽  
Soo-Hwan Jeong ◽  
Jeong Won Kim ◽  
Tae Geol Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Oxidation Mechanism ◽  
Ex Situ ◽  
Heating Process ◽  
Fast Diffusion ◽  
Stress Evolution ◽  
Compressive Stresses ◽  
Layered Formation ◽  
Curvature Measurements

Oxidation-induced stress evolutions in Ta thin films were investigated using ex situ microstructure analyses and in situ wafer curvature measurements. It was revealed that Ta thin films are oxidized to a crystalline TaO2 layer, which is subsequently oxidized to an amorphous tantalum pentoxide (a-Ta2O5) layer. Initial layered oxidation from Ta to TaO2 phases abruptly induces high compressive stress up to about 3.5 GPa with fast diffusion of oxygen through the Ta layer. Subsequently, it is followed by stress relaxation with the oxidation time, which is related to the slow oxidation from TaO2 to Ta2O5 phases. The initial compressive stress originates from the molar volume expansion during the layered formation of TaO2 from the Ta layer, while the relaxation of the compressive stresses is ascribed to the amorphous character of the a-Ta2O5 layer. According to Kissinger's analysis of the stress evolution during an isochronic heating process, the oxygen diffusion process through the a-Ta2O5 layer is the rate-controlling stage in the layered oxidation process of forming a a-Ta2O5/TaO2/Ta multilayer and has an activation energy of about 190.8 kJ/mol.

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