Surface Characteristics of Ni-Mn-Fe-Ga Sputtered Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2290-2295
Author(s):  
Hai Bo Wang ◽  
Jin Yong Xu ◽  
Wei Cai
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Average Particle Size ◽  
Surface Characteristics ◽  
Crystallographic Structure ◽  
Chemical Compositions ◽  
Average Particle ◽  
Alloy Thin Film ◽  
X Ray ◽  
Sputtering Power

The Ni-Mn-Fe-Ga shape memory alloy thin film was deposited onto silicon substrates by using radio-frequency (R.F.) magnetron sputtering technique. Chemical composition, surface morphology and crystallographic structure were systematically investigated by means of X-ray fluorescence (XRF), atomic force microscope (AFM) and X-ray diffraction (XRD). The experimental results show that the magnetron sputtering process has remarkable influence on the chemical compositions and surface characteristics of Ni-Mn-Fe-Ga alloy thin films. As the sputtering power ranging between 245W and 405W, Ni content of the thin films decreases with the sputtering power increasing, whereas Mn and Fe contents increase with increasing the sputtering power and Ga content almost keep a constant. The surface roughness and the average particle size of thin films increase with the increase of Ar working pressure and sputtering power. The film deposited at room temperature has a cubic L21 structure.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

FABRICATION AND CHARACTERIZATION OF AQUEOUS SOL–GEL-DERIVED LaFeO3 THIN FILMS

2000 ◽  
Vol 14 (22n23) ◽  
pp. 801-808 ◽  
Author(s):  
M. RAJENDRAN ◽  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Average Particle Size ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Correlation Spectroscopy ◽  
Average Particle ◽  
X Ray

A novel all-inorganic aqueous sol–gel process has been developed to fabricate LaFeO3 thin films by dip-coating. Stable, positively charged colloidal sol particles of hydrous lanthanum ferrite with an average particle size (Z av ) of 7 nm were prepared and coated onto quartz plates under controlled conditions. The sols have been characterized using photon correlation spectroscopy (PCS) for Z av and size distribution. The redispersible gel was characterized by thermogravimetric and differential thermal analysis (TG-DTA) and also by isothermal heating followed by X-ray diffraction to identify the reaction sequence to form LaFeO 3. The sol–gel films as deposited were X-ray amorphous on heating up to 500°C, partially crystalline at 600°C, fully crystalline and single phase at 650°C and above. These films were continuous, polycrystalline, single phase, had uniform thickness in the range between 180 to 1000 nm, depending on deposition conditions, and showed about 80% optical transmittance. The optical band gap varied from 2.7 to 3.3 eV as a function of the annealing temperature. The refractive index increased with increase in annealing temperature from 1.55 at 500°C to 1.86 at 800°C.

Preparation of fine-grained MgO and Gd2O3 stabilized ZrO2 thin films by electron beam physical vapor deposition co-evaporation

1997 ◽  
Vol 12 (12) ◽  
pp. 3260-3265 ◽  
Author(s):  
F. Tcheliebou ◽  
M. Boulouz ◽  
A. Boyer
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Average Particle Size ◽  
Electron Gun ◽  
Cubic Phase ◽  
Crystallographic Structure ◽  
Average Particle ◽  
Scanning Electron Micrographs ◽  
Dopant Content ◽  
Fine Grained

Thin films of ZrO2 doped with MgO and Gd2O3, 1–1.5 μm in thickness are formed onto nickel substrates by reactive thermal evaporation using a dual-hearth electron gun. X-ray diffraction patterns of the deposits show changes in the crystallographic structure and average particle size as a function of the dopant content. A mixture of monoclinic and tetragonal phases gradually disappears to become a single cubic phase with increasing dopant molar fraction. The average crystallite size deduced from diffraction line broadening decreases as the dopant content increases. This observation is strongly confirmed by scanning electron micrographs which reveal a smooth surface topography. Fine-grained materials obtained here are interpreted in terms of high nucleation rate and kinetically limited grain growth. It appears that composition, crystallographic structure, and microstructure relations are of paramount importance in ZrO2-based films prepared by electron-beam evaporation.

Structural, Optical and Magnetic Properties of Ni Doped ZnS Nanoparticles

2018 ◽  
Vol 24 (8) ◽  
pp. 5640-5644
Author(s):  
B Sreenivasulu ◽  
S. Venkatramana Reddy ◽  
P. Venkateswara Reddy
Keyword(s):  
Electron Microscopy ◽  
Particle Size ◽  
Absorption Spectra ◽  
Spherical Surface ◽  
Room Temperature Ferromagnetism ◽  
Average Particle Size ◽  
Precipitation Method ◽  
Chemical Compositions ◽  
Average Particle ◽  
X Ray

Pure ZnS and 3 mol% of Ni doped ZnS nano powders are prepared by chemical co-precipitation method. Properties of ZnS: Ni2+ nanoparticles are studied by X-ray diffraction Spectra (XRD), Raman spectroscopy (RS), Photoluminescence (PL), Absorption Spectra, Scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDAX), Transmission electron microscopy (TEM) and Vibrating sample magnetometer (VSM). From XRD data, it conform the structure of ZnS, and particle size of pure and Ni doped ZnS data indicates the incorporation of Ni2+ in ZnS nanocrystal lattice. Raman spectra for pure and Ni doped samples exhibited vibrational modes confirm the structure of ZnS. Photoluminescence spectra reveal that the emission peaks are in UV and visible regions; this is confirming the absorption spectra. SEM micrographs show spherical morphology, and chemical compositions of samples are in stoichiometric proportions. TEM micro graphs show the spherical surface morphology and average particle size for pure and Ni2+ doped nanoparticles are in the range of 2–3 nm, this is good agreement with XRD results. M–H curves from VSM show room temperature ferromagnetism.

scholarly journals Fabrication and Characterization of Gas Sensor from ZrO2: MgO Nanostructure Thin Films by R.F. Magnetron Sputtering Technique

2019 ◽  
Vol 16 (1) ◽  
pp. 0199
Author(s):  
Khalil Et al.
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Spectral Response ◽  
Average Particle Size ◽  
Average Particle ◽  
X Ray ◽  
Sensing Properties ◽  
Force Microscopy ◽  
Plasma Sputtering ◽  
Atomic Force

Thin films ZrO2: MgO nanostructure have been synthesized by a radio frequency magnetron plasma sputtering technique at different ratios of MgO (0,6, 8 and  10)% percentage to be used as the gas sensor for nitrogen dioxide NO2. The samples were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and sensing properties were also investigated. The average particle size of all prepared samples was found lower than 33.22nm and the structure was a monoclinic phase. The distribution of grain size was found lower than36.3 nm and uninformed particles on the surface. Finally, the data of sensing properties have been discussed, where they indicated that sensitivity reached 42.566% at 300 oC, spectral response time less than 52.2 s and recovery time 135.9 s.

STRUCTURE AND THICKNESS DEPENDENT OPTICAL PROPERTIES OF NANOCRYSTALLINE HAEMATITE THIN FILMS

2001 ◽  
Vol 15 (02) ◽  
pp. 201-208 ◽  
Author(s):  
M. RAJENDRAN ◽  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Reaction Pathway ◽  
Sol Gel ◽  
Average Particle Size ◽  
Dip Coating ◽  
Correlation Spectroscopy ◽  
Average Particle ◽  
X Ray ◽  
Thermoanalytical Techniques

An aqueous sol-gel process has been developed to deposit nanocrystalline haematite (α- Fe 2 O 3) thin films by dip-coating. Stable, positively charged colloidal sol particles of hydrous iron (III) oxide with an average particle size (Z av ) of 6 nm were prepared and coated onto quartz plates under controlled conditions. The sols were characterised using photon correlation spectroscopy (PCS) for Z av and size distribution. The re-dispersible gel was characterised by thermoanalytical techniques (TG-DTA) and also by isothermal heating followed by X-ray diffraction to identify the reaction pathway to form α- Fe 2 O 3. The films as deposited were X-ray amorphous up to 450°C, nan°Crystalline in the range 450 to 600°C, crystalline and single phase above 600°C. The films were optically transparent, continuous and had uniform thickness in the range between 180 nm to 1000 nm depending on deposition conditions. The optical band gap varied from 2.1 to 2.6 eV as a function of film thickness. The refractive index increased with increase in annealing temperature but decreased with film thickness.

scholarly journals Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

2021 ◽  
Vol 127 (10) ◽  
Author(s):  
Somayeh Asgary ◽  
Elnaz Vaghri ◽  
Masoumeh Daemi ◽  
Parisa Esmaili ◽  
Amir H. Ramezani ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sputtering Power ◽  
Microstructural Surface ◽  
Deposited Films

AbstractIn this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

Copper (II) Oxide Powder Prepared by Low Temperature Hydrothermal Method

2020 ◽  
Vol 861 ◽  
pp. 270-276
Author(s):  
Pusit Pookmanee ◽  
Maneerat Mueangjai ◽  
Sukon Phanichphant ◽  
Chanchana Thanachayanont
Keyword(s):  
Particle Size ◽  
Low Temperature ◽  
Hydrothermal Method ◽  
Ph Value ◽  
Average Particle Size ◽  
Fine Powder ◽  
Chemical Compositions ◽  
Average Particle ◽  
Mixed Solution ◽  
X Ray

In this research, CuO powder was prepared by low temperature hydrothermal method. Copper (II) nitrate trihydrate (Cu (NO3)2.3H2O) and sodium hydroxide (NaOH) were used as the starting precursors. The final pH value of the mixed solution was adjusted to 9 by 4M NaOH and treated at 100 oC and 200 oC for 4 and 6 h. The black fine powder was obtained after dried at 80 oC for 4 h. The phase was characterized by X-ray diffraction (XRD). A single phase of monoclinic structure of CuO powder prepared by low temperature hydrothermal method at 200 oC for 4 and 6 h was obtained without calcination step. The morphology and particle size were investigated by scanning electron microscopy (SEM). The morphology was flower-like in shape and the average particle size in range of 0.3×0.7 μm. The element composition was indicated by energy dispersive X-ray spectrometry (EDX). The chemical compositions showed the characteristic X-ray energy of copper (Kα = 0.95 keV) and oxygen (Kα = 0.53 keV). The functional group was indentified by fourier transform spectrophotometry (FTIR). The wavenumber at 433-531 cm-1 was corresponded to vibration of Cu-O stretching.

Fabrication and Characterization of Gas Sensor from ZrO2: MgO Nanostructure Thin Films by R.F. Magnetron Sputtering Technique

2019 ◽  
Vol 16 (1(Suppl.)) ◽  
pp. 0199 ◽  
Author(s):  
Khalil Et al.
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Spectral Response ◽  
Average Particle Size ◽  
Average Particle ◽  
X Ray ◽  
Sensing Properties ◽  
Force Microscopy ◽  
Plasma Sputtering ◽  
Atomic Force

Thin films ZrO2: MgO nanostructure have been synthesized by a radio frequency magnetron plasma sputtering technique at different ratios of MgO (0,6, 8 and  10)% percentage to be used as the gas sensor for nitrogen dioxide NO2. The samples were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and sensing properties were also investigated. The average particle size of all prepared samples was found lower than 33.22nm and the structure was a monoclinic phase. The distribution of grain size was found lower than36.3 nm and uninformed particles on the surface. Finally, the data of sensing properties have been discussed, where they indicated that sensitivity reached 42.566% at 300 oC, spectral response time less than 52.2 s and recovery time 135.9 s.

Effects of Erbium alloying on the structural and piezoelectric properties of Aluminum Nitride thin films annealed under extreme thermal conditions

2013 ◽  
Vol 1519 ◽  
Author(s):  
V. Narang ◽  
D. Korakakis
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Thermal Conditions ◽  
Silicon Substrates ◽  
X Ray ◽  
Er Doping ◽  
Sputtering Power ◽  
P Type

ABSTRACTEffects of adding Erbium(Er) to Aluminum Nitride thin films on their structural and piezoelectric are reported along with stability of the films after annealing them at temperatures up to 600° C. The thin films samples were deposited on the (001) p-type silicon substrates by reactive magnetron sputtering, using the Er alloyed Aluminum targets with Er atomic concentrations of 0, 1, 3 and 4% and the magnetron sputtering power of 200 W. The samples were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). XPS analysis was used to confirm the stoichiometry of AlN phase, Er atomic content and its possible chemical state in the films. Results show that alloying with Er results in higher piezoelectric coefficient d33 as compared to that in Er-free AlN thin films. Structural analysis of the films by XRD shows the shift of (0002) AlN peak to lower 2θ values upon Er doping, indicating the presence of uniform internal compressive stress.

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