Structural Analysis of ZnO Thin Films Grown in Room Temperature on PET Film

2014 ◽  
Vol 778-780 ◽  
pp. 1201-1205
Author(s):  
Hiroshi Yamamoto ◽  
Kohei Idehara ◽  
Ryota Kimura ◽  
Hiroshi Nishigaki ◽  
Noriyuki Hasuike ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Analysis ◽  
Polyethylene Terephthalate ◽  
Room Temperature ◽  
Early Stage ◽  
Zno Thin Films ◽  
Polyethylene Terephthalate Film ◽  
Roughened Surface ◽  
Pet Film

The structure of ZnO thin films grown in room temperature by reactive DC sputter technique on polyethylene terephthalate film were evaluated by SEM and TEM. The quality of ZnO thin films grown in room temperature were observed to vary widely. ZnO crystals grow without uniform orientation in early stage of growth, and then ZnO crystallinity improves as the ZnO thin films grow up. And ZnO crystallinity is influenced by roughened surface of PET film.

scholarly journals Effect of O2/Ar Gas Flow Ratios on Properties of Cathodic Vacuum Arc Deposited ZnO Thin Films on Polyethylene Terephthalate Substrate

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Chien-Wei Huang ◽  
Ru-Yuan Yang ◽  
Cheng-Tang Pan ◽  
Min-Hang Weng
Keyword(s):  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Gas Flow ◽  
Room Temperature ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Films ◽  
High Deposition Rate ◽  
Ar Gas

Cathodic vacuum arc deposition (CVAD) can obtain a good quality thin film with a low growth temperature and a high deposition rate, thus matching the requirement of film deposition on flexible electronics. This paper reported the room-temperature deposition of zinc oxide (ZnO) thin films deposited by CVAD on polyethylene terephthalate (PET) substrate. Microstructure, optical, and electrical measurements of the deposited ZnO thin films were investigated with various O2/Ar gas flow ratios from 6 : 1 to 10 : 1. The films showed hexagonal wurtzite crystal structure. With increasing the O2/Ar gas flow ratios, thec-axis (002) oriented intensity decreased. The crystal sizes were around 16.03 nm to 23.42 nm. The average transmittance values in the visible range of all deposited ZnO films were higher than 83% and the calculated band gaps from the absorption data were found to be around 3.1 to 3.2 eV. The resistivity had a minimum value in the 3.65 × 10−3 Ω·cm under the O2/Ar gas flow ratio of 8 : 1. The luminescence mechanisms of the deposited film were also investigated to understand the defect types of room-temperature grown ZnO films.

Plasma Pre-Treatment of Polyethylene Terephthalate Substrate Influence on the Properties of ZnO Thin Film

2014 ◽  
Vol 895 ◽  
pp. 41-44
Author(s):  
Seiw Yen Tho ◽  
Kamarulazizi Ibrahim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Contact Angle Measurement ◽  
Angle Measurement ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Water Contact ◽  
Pre Treatment ◽  
Pet Substrate

In this work, the influences of plasma pre-treatment on polyethylene terephthalate (PET) substrate to the properties of ZnO thin film have been carried out. ZnO thin films were successfully grown on PET substrate by spin coating method. In order to study the effects of plasma pre-treatment, a comparison of treated and untreated condition was employed. Water contact angle measurement had been carried out for PET wettability study prior to ZnO thin film coating. Morphology study of ZnO thin film was performed by scanning probe microscope (SPM). Besides, optical study of the ZnO thin film was done by using UV-vis spectrophotometer. All the measured results show that plasma pre-treatment of PET substrate plays an important role in enhancing the wettability of PET and optical properties of the ZnO thin films. In conclusion, pre-treatment of PET surface is essential to produce higher quality ZnO thin film on this particular substrate in which would pave the way for the integration of future devices.

Ionic Conduction Response under Extending-Deformation of β-AgI Thin Films

2018 ◽  
Vol 790 ◽  
pp. 3-8 ◽  
Author(s):  
Shin Ichi Furusawa ◽  
Tomosato Ida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Ionic Conductivity ◽  
Tensile Stress ◽  
Polyethylene Terephthalate ◽  
Ionic Conduction ◽  
Ion Conduction ◽  
Polyethylene Terephthalate Film ◽  
Extension Ratio

Tensile stress was applied to β-AgI thin film prepared on a polyethylene terephthalate film, and the ion conduction response in the direction of the tensile extension was investigated. The ionic conductivity of the β-AgI thin film decreases and the activation energy for ionic conduction increases with increasing extension ratio. This behaviour is attributed to the modulation of the crystal framework by the extension of the AgI thin film.

scholarly journals Nonthermal Crystalline Forming of Ceramic Nanoparticles by Non-Equilibrium Excitation Reaction Field of Electron

2021 ◽  
Author(s):  
Norihiro Shimoi
Keyword(s):  
Thin Films ◽  
Film Formation ◽  
High Mobility ◽  
Zno Thin Films ◽  
Reaction Field ◽  
Wet Process ◽  
Interface Control ◽  
Zno Particles ◽  
Pet Film ◽  
Non Equilibrium

In this work, we have discovered a method of forming ZnO thin films with high mobility, high carrier density and low resistivity on plastic (PET) films using non-equilibrium reaction fields, even when the films are deposited without heating, and we have also found a thin film formation technique using a wet process that is different from conventional deposition techniques. The field emission electron-beam irradiation treatment energetically activates the surface of ZnO particles and decomposes each ZnO particles. The energy transfer between zinc ions and ZnO surface and the oxygen present in the atmosphere around the ZnO particles induce the oxidation of zinc. In addition, the ZnO thin films obtained in this study successfully possess high functional thin films with high electrical properties, including high hole mobility of 208.6 cm2/Vs, despite being on PET film substrates. These results contribute to the discovery of a mechanism to create highly functional oxide thin films using a simple two-dimensional process without any heat treatment on the substrate or during film deposition. In addition, we have elucidated the interfacial phenomena and crosslinking mechanisms that occur during the bonding of metal oxide particles, and understood the interfacial physical properties and their effects on the electronic structure. and surface/interface control, and control of higher-order functional properties in metal/ceramics/semiconductor composites, and contribute to the provision of next-generation nanodevice components in a broad sense.

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Annealing Effect ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Doped Zno

Electrical Properties of Nanostructure n-ZnSe/p-Si(100) Heterojunction Thin Film Diode

2018 ◽  
Vol 775 ◽  
pp. 246-253
Author(s):  
Ngamnit Wongcharoen ◽  
Thitinai Gaewdang
Keyword(s):  
Thin Films ◽  
Ideality Factor ◽  
Room Temperature ◽  
Energy Levels ◽  
Thermionic Emission ◽  
Depletion Region ◽  
Trap Level ◽  
Characteristic Energy ◽  
Znse Thin Films

The ZnSe/Si heterojunction is of specific interest since this structure provides effective solar cell and enables the integration of wide bandgap device in silicon circuits. It is known that the quality of the diode and the current transport mechanisms across the heterojunction may be greatly influenced by the quality of the interface and depends on the crystallinity of the film layer. In this work, n-ZnSe/p-Si (100) heterojunction was fabricated by thermal evaporating ZnSe thin films on p-Si (100) substrates. The current-voltage characteristics of n-ZnSe/p-Si (100) heterojunction were investigated in temperature range 20-300 K. Some important parameters such as barrier height, ideality factor and series resistance values evaluated by using thermionic emission (TE) theory and Cheung’s method at room temperature are n = 2.910,φB0= 0.832 eV and 8.59103Ω, respectively. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination at junction interface with activation energy and characteristic energy values about 1.293 eV and E00= 95 meV, respectively. The carrier concentration of ZnSe thin films about 3.16×1013cm-3was deduced from the C-V measurements at room temperature. Admittance spectroscopy was employed for analysis of the defect energy levels situated in depletion region. The results showed that there was a single trap level whose position in the band gap was close to 0.04 eV above valence band. The results of this work may be useful for application such as heterojunction solar cells.

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