Impact of Cell Layout and Device Structure on On-Voltage Reduction of 6.5-kV n-Channel SiC IGBTs

2018 ◽  
Vol 924 ◽  
pp. 637-640 ◽  
Author(s):  
Naoki Watanabe ◽  
Hiroyuki Yoshimoto ◽  
Akio Shima
Keyword(s):  
Potential Barrier ◽  
Device Simulation ◽  
Electron Injection ◽  
Channel Width ◽  
Barrier Structure ◽  
Collector Current ◽  
Device Structure ◽  
Conventional Structure ◽  
Low Drift ◽  
Drift Layer

A box cell layout and a hole-barrier structure were used to realize low-on-voltage n-channel 4H-SiC IGBTs with 6.5-kV blocking capability. Box cell layout can increase the channel width, leading to reduction of the channel resistance and an enhancement of electron injection from an emitter. Hole-barrier structure, which is a potential barrier for holes to prevent them from flowing out of the emitter, can enhance conductivity modulation. An on-voltage of 3.98 V at a collector current of 100 A/cm2 was achieved from a fabricated SiC IGBTin this study. Since the on-voltage of a SiC IGBT with a conventional structure was 4.81 V at the same collector current, the effect of our new structure was successfully shown to reduce the on-voltage of SiC IGBTs. An estimation of each voltage component involved in the on-voltage was also carried out by utilizing a device simulation, and the estimation shows that a SiC IGBT incorporating a box layout and hole-barrier structure will thus have quite a low drift-layer voltage and an on-voltage close to the limit determined by the bipolar built-in voltage.

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

4.5kV SiC JBS Diodes

2013 ◽  
Vol 347-350 ◽  
pp. 1506-1509 ◽  
Author(s):  
Yong Hong Tao ◽  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Yun Li
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Doping Level ◽  
Doping Concentration ◽  
Device Structure ◽  
Reverse Voltage ◽  
Edge Termination ◽  
Drift Layer

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V.

scholarly journals Comparative Study of Si-Ge-Sn Resonant Cavity Enhanced Heterojunction Bipolar Phototransistor (RCE-HPT) under Quantum Confined Stark Effect (QCSE) and Franz Keldysh Effect (FKE) at 1.55 µm

2021 ◽  
Author(s):  
Soumava Ghosh
Keyword(s):  
Stark Effect ◽  
Resonant Cavity ◽  
Optical Gain ◽  
Group Iv ◽  
Barrier Structure ◽  
Collector Current ◽  
Absorption Region ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Franz Keldysh Effect

Abstract Group-IV and their alloy based Heterojunction Bipolar Phototransistors (HPTs) are of immense interest in recent day optical communication. In this paper first resonant cavity enhanced heterojunction bipolar phototransistor (RCE-HPT) with Ge0.992Sn0.008/Si0.30Ge0.61Sn0.09 Quantum Well/barrier structure under Quantum Confined Stark Effect (QCSE) has been evaluated. Further the bulk GeSn absorption region has been considered instead of QW/barrier structure and estimated the Franz Keldysh Effect (FKE). Finally different RCE-HPT related parameters such as quantum efficiency-bandwidth product, responsivity, collector current and optical gain have been studied and compared under QCSE and FKE.

scholarly journals Vertical Gate RF SOI LIGBT for SPICs with Significantly Improved Latch-Up Immunity

VLSI Design ◽  
2011 ◽  
Vol 2011 ◽  
pp. 1-9
Author(s):  
Haipeng Zhang ◽  
Ruisheng Qi ◽  
Liang Zhang ◽  
Buchun Su ◽  
Dejun Wang
Keyword(s):  
Breakdown Voltage ◽  
Current Density ◽  
Process Simulation ◽  
Room Temperature ◽  
Current Model ◽  
Device Simulation ◽  
Device Structure ◽  
Hole Current ◽  
Latch Up

Based on the previous achievements in improving latch-up immunity of SOI LIGBT, process simulation on our proposed VG RF SOI NLIGBT was carried out with TCAD to provide a virtually fabricated device structure. Then, an approximate latching current model was derived according to the condition of minimum regenerative feedback couple between the parasitic dual-transistors. The model indicates that its latching current is a few orders higher than those before. Further verification through device simulation was done with TCAD, which proved that its weak snapback voltage in the off state is about 0.5–2.75 times higher than those breakdown voltages reported before, its breakdown voltage in the off state is about 19 V higher than its weak snapback voltage, and its latching current density in the on state is about 2-3 orders of magnitude higher than those reported before at room temperature due to hole current bypass through P+ contact in P-well region. Therefore, it is characterized by significantly improved latch-up immunity.

Development of 1000V SiC JBS Diodes

2013 ◽  
Vol 846-847 ◽  
pp. 741-744
Author(s):  
Gang Chen ◽  
Lin Wang ◽  
Run Hua Huang ◽  
Ao Liu ◽  
Song Bai ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Metal Structure ◽  
Schottky Junction ◽  
Device Structure ◽  
Edge Termination ◽  
Turn On ◽  
Forward Current ◽  
State Resistance ◽  
Drift Layer ◽  
Multilayer Metal

High voltage 4H-SiC Ni Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1000V and forward current of 1A has been fabricated. A low reverse leakage current below 4.7×10-6A/cm2 at the bias voltage of-1000V has been obtained. The forward on-state current was 1A at VF = 2.2V. The chip is 1.3mm×1.3mm. The turn-on voltage is about 1.4V. The on-state resistance is 14.5mΩ·cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a SMB package. The thickness of the N-epilayer is 10μm, and the doping concentration is 4×1015cm3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using WTi/Au multilayer metal structure, the double side Au process of 4H-SiC JBS diode is formed. We use the PECVD SixNy/SiO2 as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer

2016 ◽  
Vol 858 ◽  
pp. 939-944 ◽  
Author(s):  
Naoki Watanabe ◽  
Hiroyuki Yoshimoto ◽  
Akio Shima ◽  
Renichi Yamada ◽  
Yasuhiro Shimamoto
Keyword(s):  
Room Temperature ◽  
Power Conversion ◽  
Switching Loss ◽  
Collector Current ◽  
Load Current ◽  
Single Operation ◽  
Blocking Voltage ◽  
Bus Voltage ◽  
Drift Layer

Thin drift layers were used to realize n-channel 4H-SiC IGBTs with an extremely low switching loss. The thickness of a drift layer was 60 μm, which was designed for a blocking voltage of 6.5 kV. An on-voltage of 5.4 V was obtained at a collector current of 100 A/cm2 and the specific differential on-resistance at 100 A/cm2 was 20 mΩcm2 at room temperature, indicating proper bipolar operation. A switching evaluation of the SiC IGBTs was performed with a bus voltage of 3.6 kV and a load current of 10 A, and a turn-off loss of 1.2 mJ was obtained. This turn-off loss is very small compared to the values in the current literatures, and was estimated to be an over 80% reduction. The series operation of thin-drift-layer 6.5 kV SiC IGBTs can ensure a lower switching loss than the single operation of higher blocking voltage devices in power conversion systems.

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