scholarly journals Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 693-696 ◽  
Author(s):  
Johanna Müting ◽  
Ulrike Grossner
Keyword(s):  
Silicon Carbide ◽  
Manufacturing Processes ◽  
Power Mosfets ◽  
Switching Losses ◽  
Major Interest ◽  
Simulation Based ◽  
Substrate Resistance ◽  
Increasing Temperature ◽  
State Resistance ◽  
Drift Layer

The behavior of silicon carbide power MOSFETs is analyzed using TCAD device simulations with respect to conduction and switching losses. Device designs with varying breakdown voltages are simulated. The contributions to the on-state resistance are shown at room and elevated temperature. Whereas channel and substrate resistance dominate at low breakdown voltages, drift and JFET resistance dominate at high breakdown voltages. With increasing temperature, the channel resistance decreases and thus the drift resistance is the main contributor already at medium breakdown voltages. Manufacturing processes of a device can have a high influence on its losses. Variations in interface mobility, drift doping, and p-body doping can lead to a significant change of on-resistance, internal capacitances, and reverse recovery charge. For higher voltage classes the drift layer properties should be of major interest as it influences on-resistance and reverse recovery charge.

scholarly journals Power Savings with all SiC Inverter in Electric Traction applications

2019 ◽  
Vol 87 ◽  
pp. 01014
Author(s):  
B.K. Chakravarthy ◽  
G. Sree Lakshmi
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Thermal Management ◽  
Power Converter ◽  
System Efficiency ◽  
Passive Components ◽  
Switching Losses ◽  
Higher Power ◽  
Electric Traction ◽  
State Resistance

The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and smaller passive components which result in higher power density. SiC devices have higher blocking voltages, lower on-state resistance and switching losses and higher thermal conductivity and operating temperatures. SiC devices can operate at higher voltages, higher frequencies and higher junction temperatures than comparable Si devices, which results in significant reduction in weight and size of the power converter and increase in system efficiency.

scholarly journals A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

2016 ◽  
Vol 4 (3) ◽  
pp. 978-987 ◽  
Author(s):  
Gianpaolo Romano ◽  
Asad Fayyaz ◽  
Michele Riccio ◽  
Luca Maresca ◽  
Giovanni Breglio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Power Mosfets ◽  
Comprehensive Study

Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs

2021 ◽  
pp. 1-5
Author(s):  
James A. Cooper ◽  
Dallas T. Morisette ◽  
Madankumar Sampath ◽  
Cheryl A. Stellman ◽  
Stephen B. Bayne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Power Mosfets ◽  
Gate Charge

scholarly journals A High-Efficiency Three-Level ANPC Inverter Based on Hybrid SiC and Si Devices

Energies ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1159 ◽  
Author(s):  
Zhijian Feng ◽  
Xing Zhang ◽  
Jianing Wang ◽  
Shaolin Yu
Keyword(s):  
Silicon Carbide ◽  
High Efficiency ◽  
The Other ◽  
Switching Frequency ◽  
Parallel Operation ◽  
Switching Loss ◽  
Hybrid Scheme ◽  
Excellent Performance ◽  
Switching Losses ◽  
The Cost

Silicon carbide (SiC) devices have excellent performance, such as higher switching frequency and lower switching loss compared with traditional silicon (Si) devices. The application of SiC devices in inverters can achieve higher efficiency and power density. In recent years, the production process of SiC devices has become more mature, but the cost is still several times that of traditional Si devices. In order to balance cost and efficiency, replacing only some of the Si devices with SiC devices in a topology is a better choice. This paper proposed a high-efficiency hybrid active neutral point clamped (ANPC) three-level inverter which has only two SiC devices and the other devices are Si devices. A specific modulation strategy was applied to concentrate switching losses on the SiC devices and reduce the on-state loss through parallel operation during freewheeling intervals. Theoretical efficiency curves and experimental verification of the proposed hybrid scheme with Si-only and SiC-only schemes were carried out.

Single-Phase Multilevel Inverter with Simpler Basic Unit Cells for Photovoltaic Power Generation

2016 ◽  
Vol 7 (4) ◽  
pp. 1233 ◽  
Author(s):  
M. S. Chye ◽  
J. A. Soo ◽  
Y. C. Tan ◽  
M. Aizuddin ◽  
S. Lee ◽  
...  
Keyword(s):  
Power Generation ◽  
Single Phase ◽  
Harmonic Distortion ◽  
Multilevel Inverter ◽  
Basic Unit ◽  
Scanning Method ◽  
Power Mosfets ◽  
Switching Losses ◽  
Ac Power ◽  
Unit Cells

This paper presents a single-phase multilevel inverter (MLI) with simpler basic unit cells. The proposed MLI is able to operate in two modes, i.e. charge mode to charge the batteries, and inverter mode to supply AC power to load, and therefore, it is inherently suitable for photovoltaic (PV) power generation applications. The proposed MLI requires lower number of power MOSFETs and gate driver units, which will translate into higher cost saving and better system reliability. The power MOSFETs in the basic unit cells and H-bridge module are switched at near fundamental frequency, i.e. 100 Hz and 50 Hz, respectively, resulting in lower switching losses. For low total harmonic distortion (THD) operation, a deep scanning method is employed to calculate the switching angles of the MLI. The lowest THD obtained is 8.91% at modulation index of 0.82. The performance of the proposed MLI (9-level) has been simulated and evaluated experimentally. The simulation and experimental results are in good agreement and this confirms that the proposed MLI is able to produce an AC output voltage with low THD.

Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs

2012 ◽  
Vol 59 (6) ◽  
pp. 3258-3264 ◽  
Author(s):  
A. Akturk ◽  
J. M. McGarrity ◽  
S. Potbhare ◽  
N. Goldsman
Keyword(s):  
Silicon Carbide ◽  
Radiation Effects ◽  
Power Mosfets

Silicon Carbide Vertical JFET Operating at High Temperature

2008 ◽  
Vol 600-603 ◽  
pp. 1063-1066 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Keith P. Hilton ◽  
Nicolas G. Wright ◽  
Michael J. Uren ◽  
A.G. Munday ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Temperature Dependence ◽  
Power Law ◽  
Current Density ◽  
Electron Mobility ◽  
Room Temperature ◽  
Protective Atmosphere ◽  
State Resistance ◽  
A Current

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.

Sign in / Sign up

Export Citation Format

Share Document