Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)

2019 ◽  
Vol 963 ◽  
pp. 318-323 ◽  
Author(s):  
Antonella Parisini ◽  
Roberta Nipoti
Keyword(s):  
Doping Level ◽  
Carrier Transport ◽  
Annealing Temperature ◽  
Recent Literature ◽  
Extended Defects ◽  
Transport Mechanisms ◽  
As Doping ◽  
P Type ◽  
Ion Implanted

Fundamental aspects of transport in Al ion implanted p-type 4H-SiC are briefly reviewed, in the light of recent literature. Particular attention is paid on (i) the Hall factor and (ii) the role of disorder in the onset of a variable range hopping mechanism (VRH) at high temperatures as doping level increases, up to a 2D-VRH induced by extended defects in the heaviest doped samples. The study allowed to understand the critical balance between implanted impurity density and annealing temperature that leads to the searched doping level, ensuring an efficient electrical activation of implanted impurities, on a side, and, on the other side, avoiding stacking faults that cause anisotropic hopping transport.

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

2018 ◽  
Vol 924 ◽  
pp. 339-344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Metal Contacts ◽  
Semiconductor Interfaces ◽  
Key Points ◽  
Schottky Type ◽  
Semiconductor Contacts ◽  
P Type

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type

Structural Analysis of Au/Ti/Al/SiC Contacts in Dependence on the Initial Composition and Annealing

2010 ◽  
Vol 12 ◽  
pp. 55-63 ◽  
Author(s):  
Lilyana Kolaklieva ◽  
Roumen Kakanakov ◽  
Maya Marinova ◽  
Efstathios K. Polychroniadis
Keyword(s):  
Carrier Transport ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Strong Dependence ◽  
Initial Contact ◽  
Initial Composition ◽  
Tem Analysis ◽  
Optimal Annealing Temperature ◽  
Two Phases ◽  
P Type

The dependence of the structure and composition of nanolayered Au/Ti/Al ohmic contacts to p-type 4H-SiC on the initial Ti:Al ratio has been investigated. Two contact compositions, Au/Ti(70%)/Al(30%) and Au/Ti(30%)/Al(70%), have been studied regarding the electrical properties, structure, composition and annealing temperature in the interval 850 – 1000o C. The correlation between the electrical behaviour and structure of the annealed contacts is discussed. Very low resistivity of 1.42x10-5 .cm2 after annealing at 900o C has been obtained for the contact having an initial composition Ti:Al (30:70), while the lowest resistivity of 1.21x10-5 .cm2 has been measured for the contact with a composition Ti:Al (70:30) after annealing at 1000o C. Strong dependence of the contact structure on the Ti:Al ratio and annealing temperature, respectively, has been found out. A presence of two phases, Au2Ti and Al3Ti, in all contacts has been determined after annealing, despite the temperature value and Ti:Al ratio. The TEM analysis reveals that titanium and aluminum silicides and carbides are formed after annealing as the Ti:Al ratio affects the kind of silicides and carbides created. It is obtained that the initial composition of the deposited metal layers influences only the phase composition of the annealed contact but not the grain sizes of the dominant phases formed. The origin of the ohmic properties improvement is explained by the formation of Ti3SiC2 compound and/or enhanced carrier transport by the presence of metal spikes into SiC depending on the initial contact composition and as consequence the optimal annealing temperature.

The role of extended defects on transient boron diffusion in ion-implanted silicon

1992 ◽  
Vol 12 (4) ◽  
pp. 307-325 ◽  
Author(s):  
R.J. Schreutelkamp ◽  
J.S. Custer ◽  
V. Raineri ◽  
W.X. Lu ◽  
J.R. Liefting ◽  
...  
Keyword(s):  
Extended Defects ◽  
Boron Diffusion ◽  
Ion Implanted

scholarly journals Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

1999 ◽  
Vol 74 (8) ◽  
pp. 1141-1143 ◽  
Author(s):  
S. Fatima ◽  
J. Wong-Leung ◽  
J. Fitz Gerald ◽  
C. Jagadish
Keyword(s):  
Extended Defects ◽  
P Type ◽  
Ion Implanted

Electrical Properties of N Ion Implanted Layer in 3C-SiC(100) Grown on Self-Standing 3C-SiC Substrate

2007 ◽  
Vol 556-557 ◽  
pp. 579-582 ◽  
Author(s):  
Etsushi Taguchi ◽  
Yu Suzuki ◽  
Masataka Satoh
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Sheet Resistance ◽  
Gas Flow ◽  
Annealing Temperature ◽  
Hall Effect Measurement ◽  
Inductive Heating ◽  
Ar Gas ◽  
P Type ◽  
Ion Implanted

The electrical properties of N ion implanted 3C-SiC(100) have been investigated by means of Hall effect measurement. The p-type epitaxial layer grown on n+ substrate is multiply implanted with N ions with energy ranging from 15 to 120 keV at a total dose of 2.4×1015 cm-2 at room temperature, which corresponds to the doping layer with a N concentration of 1×1020 cm-3 and a thickness of 250 nm. The implanted sample is annealed by RF inductive heating annealer at temperature ranging from 1000 to 1500 oC for 10 min in Ar gas flow. The sample annealed at 1000 oC shows the sheet resistance of 1 k./sq. The sheet resistance of the implanted sample is decreased with the increase of annealing temperature. The sample annealed at 1500 oC shows the sheet resistance of 81 ./sq. and the sheet carrier concentration of 1.6×1015 cm-2. The electrical activity of implanted N impurity is estimated to be 68 %, which is much larger than that of N ion implanted 4H-SiC (about 0.9 %). The higher electrical activity of implanted N impurity is attributed to the shallower donor level than that in 4H-SiC.

On the Interaction of Dislocations with Impurities in Silicon

2005 ◽  
Vol 245-246 ◽  
pp. 15-22
Author(s):  
Daniela Cavalcoli ◽  
Anna Cavallini
Keyword(s):  
Plastic Deformation ◽  
Electronic Transitions ◽  
Conduction Band Edge ◽  
Extended Defects ◽  
Defect States ◽  
Present Contribution ◽  
Oxygen Precipitation ◽  
Deep Traps ◽  
P Type

Dislocations and impurities in silicon have been widely investigated since many years, nevertheless many questions on this subject remain still unsolved. As an example, theory, models and experimental phenomena provide evidence of the existence of shallow bands in silicon induced by the dislocation strain field. Nevertheless, only deep bands, likely associated with contamination at dislocations, have been detected up to now by junction spectroscopy. The present contribution reviews several results, obtained by the authors, on dislocation impurity interactions and their effects on the electronic properties of defect states in silicon. Point and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical methods. Different materials (oxygen precipitated and deformed Cz Si and Fz Si) were examined in order to separate the role of oxygen precipitation, plastic deformation and metallic contamination on non-radiative electronic transitions at defect centers. A deep hole trap, named T1, has been associated to dislocation-related impurity centers, while additional deep traps have been related to contamination by grown-in transition metals and to clusters involving oxygen atoms. Moreover, experimental results obtained by junction spectroscopy assessed the existence of dislocation related shallow states. These were found to be located at 70 and 60 meV from the valence and conduction band edge, respectively.

Carrier transport mechanisms through the metal/p-type diamond semiconductor interface

1997 ◽  
Vol 6 (5-7) ◽  
pp. 847-851 ◽  
Author(s):  
Y. Koide ◽  
M. Yokoba ◽  
A. Otsuki ◽  
F. Ako ◽  
T. Oku ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Transport Mechanisms ◽  
Semiconductor Interface ◽  
P Type
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