Carrier transport mechanisms through the metal/p-type diamond semiconductor interface

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

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Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)

Materials Science Forum ◽

10.4028/www.scientific.net/msf.963.318 ◽

2019 ◽

Vol 963 ◽

pp. 318-323 ◽

Cited By ~ 1

Author(s):

Antonella Parisini ◽

Roberta Nipoti

Keyword(s):

Doping Level ◽

Carrier Transport ◽

Annealing Temperature ◽

Recent Literature ◽

Extended Defects ◽

Transport Mechanisms ◽

As Doping ◽

P Type ◽

Ion Implanted

Fundamental aspects of transport in Al ion implanted p-type 4H-SiC are briefly reviewed, in the light of recent literature. Particular attention is paid on (i) the Hall factor and (ii) the role of disorder in the onset of a variable range hopping mechanism (VRH) at high temperatures as doping level increases, up to a 2D-VRH induced by extended defects in the heaviest doped samples. The study allowed to understand the critical balance between implanted impurity density and annealing temperature that leads to the searched doping level, ensuring an efficient electrical activation of implanted impurities, on a side, and, on the other side, avoiding stacking faults that cause anisotropic hopping transport.

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Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(87)90226-2 ◽

1987 ◽

Vol 97-98 ◽

pp. 939-942 ◽

Cited By ~ 8

Author(s):

J.P. Conde ◽

S. Aljishi ◽

D.S. Shen ◽

M. Angell ◽

S. Wagner

Keyword(s):

Carrier Transport ◽

Transport Mechanisms

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Characteristics of P-Type and N-Type Photoelectrochemical Biosensors: A Case Study for Esophageal Cancer Detection

Nanomaterials ◽

10.3390/nano11051065 ◽

2021 ◽

Vol 11 (5) ◽

pp. 1065

Author(s):

Joseph-Hang Leung ◽

Hong-Thai Nguyen ◽

Shih-Wei Feng ◽

Sofya B. Artemkina ◽

Vladimir E. Fedorov ◽

...

Keyword(s):

Esophageal Cancer ◽

Cancer Cells ◽

Carrier Transport ◽

X Ray Diffraction ◽

Photoelectrochemical Response ◽

Carrier Separation ◽

Human Esophageal Cancer ◽

P Type ◽

Esophageal Cancer Cells

P-type and N-type photoelectrochemical (PEC) biosensors were established in the laboratory to discuss the correlation between characteristic substances and photoactive material properties through the photogenerated charge carrier transport mechanism. Four types of human esophageal cancer cells (ECCs) were analyzed without requiring additional bias voltage. Photoelectrical characteristics were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV–vis reflectance spectroscopy, and photocurrent response analyses. Results showed that smaller photocurrent was measured in cases with advanced cancer stages. Glutathione (L-glutathione reduced, GSH) and Glutathione disulfide (GSSG) in cancer cells carry out redox reactions during carrier separation, which changes the photocurrent. The sensor can identify ECC stages with a certain level of photoelectrochemical response. The detection error can be optimized by adjusting the number of cells, and the detection time of about 5 min allowed repeated measurement.

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Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

Applied Physics Letters ◽

10.1063/1.115517 ◽

1995 ◽

Vol 67 (1) ◽

pp. 88-90 ◽

Cited By ~ 4

Author(s):

D. C. Leung ◽

P. R. Nelson ◽

O. M. Stafsudd ◽

J. B. Parkinson ◽

G. E. Davis

Keyword(s):

Carrier Transport ◽

Minority Carrier ◽

Type Silicon ◽

P Type

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Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

Journal of Materials Chemistry C ◽

10.1039/d1tc03282h ◽

2021 ◽

Vol 9 (39) ◽

pp. 13755-13760

Author(s):

Songcheng Hu ◽

Zhenhua Tang ◽

Li Zhang ◽

Dijie Yao ◽

Zhigang Liu ◽

...

Keyword(s):

Resistive Switching ◽

Negative Differential Resistance ◽

Carrier Transport ◽

Electronic Devices ◽

Differential Resistance ◽

Memory Devices ◽

Transport Mechanisms ◽

Resistive Switching Memory ◽

Potential Applications ◽

Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

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Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si

Applied Physics A ◽

10.1007/s00339-013-8166-5 ◽

2013 ◽

Vol 116 (1) ◽

pp. 91-95 ◽

Cited By ~ 5

Author(s):

Yow-Jon Lin ◽

Shih-Hung Yang

Keyword(s):

Graphene Oxide ◽

Reduced Graphene Oxide ◽

Carrier Transport ◽

Reduced Graphene ◽

Heterojunction Diodes ◽

P Type

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Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering

Journal of Materials Chemistry C ◽

10.1039/c9tc04345d ◽

2020 ◽

Vol 8 (1) ◽

pp. 201-208 ◽

Cited By ~ 4

Author(s):

Taikyu Kim ◽

Jeong-Kyu Kim ◽

Baekeun Yoo ◽

Hongwei Xu ◽

Sungyeon Yim ◽

...

Keyword(s):

Energy Barrier ◽

Field Effect Transistors ◽

Semiconductor Interface ◽

Fermi Level Pinning ◽

Switching Property ◽

Switching Characteristics ◽

Gap States ◽

P Type ◽

Tin Monoxide ◽

Semiconductor Contact

Metal–interlayer–semiconductor contact reduces metal-induced gap states, mitigating Fermi-level pinning at metal/semiconductor interface. Here, switching property of p-type SnO FET is enhanced by increasing electron Schottky barrier at off-state.

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Energized Ca2+ transport by hepatopancreatic basolateral plasma membranes of Homarus americanus.

Journal of Experimental Biology ◽

10.1242/jeb.201.2.211 ◽

1998 ◽

Vol 201 (2) ◽

pp. 211-220 ◽

Cited By ~ 1

Author(s):

Z Zhuang ◽

G A Ahearn

Keyword(s):

Transport System ◽

Carrier Transport ◽

Plasma Membranes ◽

Basolateral Membrane ◽

Membrane Vesicles ◽

Homarus Americanus ◽

Molt Cycle ◽

Apparent Affinity ◽

Carrier Mechanism ◽

P Type

Ca2+ transport by hepatopancreatic basolateral membrane vesicles of Atlantic lobster (Homarus americanus) occurred by at least two independent processes: (1) an ATP-dependent carrier transport system, and (2) a Na+-gradient-dependent carrier mechanism. The sensitivity of ATP-dependent Ca2+ transport to vanadate indicated that it was probably due to a P-type ATPase. This system exhibited an extremely high apparent affinity for Ca2+ (Kt=65.28+/-14.39 nmol l-1; Jmax=1. 07+/-0.06 pmol microg-1 protein 8 s-1). The Na+-gradient-dependent carrier transport system exhibited the properties of a Ca2+/Na+ antiporter capable of exchanging external Ca2+ with intravesicular Na+ or Li+. Kinetic analysis of the Na+-dependence of the antiport indicated that at least three Na+ were exchanged with each Ca2+ (n=2. 91+/-0.22). When Li+ replaced Na+ in exchange for 45Ca2+, the apparent affinity for Ca2+ influx was not significantly affected (with Na+, Kt=14.57+/-5.02 micromol l-1; with Li+, Kt=20.17+/-6.99 micromol l-1), but the maximal Ca2+ transport velocity was reduced by a factor of three (with Na+, Jmax=2.72+/-0.23 pmol microg-1 protein 8 s-1; with Li+, Jmax=1.03+/-0.10 pmol microg-1 protein 8 s-1). It is concluded that Ca2+ leaves hepatopancreatic epithelial cells across the basolateral membrane by way of a high-affinity, vanadate-sensitive Ca2+-ATPase and by way of a low-affinity Ca2+/Na+ antiporter with an apparent 3:1 exchange stoichiometry. The roles of these transporters in Ca2+ balance during the molt cycle are discussed.

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