Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation

2019 ◽  
Vol 963 ◽  
pp. 375-381 ◽  
Author(s):  
Anders Hallén ◽  
Margareta K. Linnarsson ◽  
Lasse Vines
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Depth Distribution ◽  
Lattice Vibrations ◽  
Recent Advances ◽  
Thermal Vibrations ◽  
Further Development ◽  
Technological Interest

The effect of lattice thermal vibrations on the channeling of 100 keV Al ions in 4H-SiC is investigated. By implanting at room temperature in the direction, the depth distribution of the incident ions is shown to be about 7 times deeper than for random implantations. At higher implantation temperatures, the channeling is reduced by the lattice vibrations and, for instance, at 600 °C implantation the distribution is about 3-4 times deeper than for a RT random implantation. The results are of technological interest for further development of implantation technology for 4H-SiC device manufacturing.

Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures

2019 ◽  
Vol 963 ◽  
pp. 382-385 ◽  
Author(s):  
Margareta K. Linnarsson ◽  
Anders Hallén ◽  
Lasse Vines ◽  
Bengt G. Svensson
Keyword(s):  
Room Temperature ◽  
Depth Distribution ◽  
Elevated Temperatures ◽  
Secondary Ion Mass Spectrometry ◽  
Lattice Vibrations ◽  
Simulation Code ◽  
Different Temperatures ◽  
P Type ◽  
Secondary Ion ◽  
Collision Approximation

Channeling of B and Al ions in 4H-SiC(0001), has been investigated by secondary ion mass spectrometry (SIMS). Ion implantations have been performed between room temperature (RT) and 600 °C at various fluences. Before implantation, the major crystal axes were determined and the sample was aligned using the blocking pattern of backscattered protons. As expected, the depth distribution of the implanted ions along a crystal direction penetrates much deeper compared to non-channeling directions. At elevated temperatures, the channeling depth for 100 keV Al-ions is decreased due to lattice vibrations. For 50 keV B-ions, the temperature effect is minor, indicating a smaller interaction between target atoms and B. Simulations has been performed using SIIMPL, a Monte Carlo simulation code based on the binary collision approximation, to predict experimental data and get a deeper insight in the channeling process.

scholarly journals Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 689-697
Author(s):  
Margareta K. Linnarsson ◽  
Anders Hallén ◽  
Lasse Vines
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Three Dimensional ◽  
Medium Energy ◽  
Projected Range ◽  
Ion Backscattering ◽  
Thermal Vibrations ◽  
Secondary Ion

Channeling phenomena during ion implantation have been studied for 50 keV 11B, 100 keV 27Al and 240 keV 71Ga in 4H-SiC by secondary ion mass spectrometry and medium energy ion backscattering. The same projected range are expected for the used energies while the channeling tails are shown to be substantially different, for example, channeled 71Ga ions may travel 5 times as deep as 11B. Ion implantation has been performed both at room temperature (RT) and 400 °C, where channeling effects are reduced for the 400 °C implantation compared to that of the RT due to thermal vibrations of lattice atoms. The temperature effect is pronounced for 71Ga but nearly negligible for 11B at the used energies. The channeling phenomena are explained by three-dimensional Monte Carlo simulations. For standard implantations, i.e. 4° off the c-direction, it is found that a direction in-between the [000-1] and the <11-2-3> crystal channels, results in deep channeling tails where the implanted ions follow the [000-1] and the <11-2-3> directions.

Recent Advances on C-Se Bond-forming Reactions at Low and Room Temperature

2020 ◽  
Vol 23 (28) ◽  
pp. 3206-3225 ◽  
Author(s):  
Amol D. Sonawane ◽  
Mamoru Koketsu
Keyword(s):  
Room Temperature ◽  
Bond Formation ◽  
Bond Forming ◽  
Material Chemistry ◽  
Recent Advances ◽  
Bond Forming Reactions ◽  
Bond Formation Reactions

: Over the last decades, many methods have been reported for the synthesis of selenium- heterocyclic scaffolds because of their interesting reactivities and applications in the medicinal as well as in the material chemistry. This review describes the recent numerous useful methodologies on C-Se bond formation reactions which were basically carried out at low and room temperature.

scholarly journals Applications, challenges, and needs for employing synthetic biology beyond the lab

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Sierra M. Brooks ◽  
Hal S. Alper
Keyword(s):  
Synthetic Biology ◽  
Great Promise ◽  
Long Term Storage ◽  
Autonomous Function ◽  
Recent Advances ◽  
Resource Limited ◽  
Major Application ◽  
Further Development ◽  
Probiotic Delivery

AbstractSynthetic biology holds great promise for addressing global needs. However, most current developments are not immediately translatable to ‘outside-the-lab’ scenarios that differ from controlled laboratory settings. Challenges include enabling long-term storage stability as well as operating in resource-limited and off-the-grid scenarios using autonomous function. Here we analyze recent advances in developing synthetic biological platforms for outside-the-lab scenarios with a focus on three major application spaces: bioproduction, biosensing, and closed-loop therapeutic and probiotic delivery. Across the Perspective, we highlight recent advances, areas for further development, possibilities for future applications, and the needs for innovation at the interface of other disciplines.

Recent Advances of Polymer‐Based Pure Organic Room Temperature Phosphorescent Materials

2021 ◽  
pp. 2100021
Author(s):  
Jun Wang ◽  
Xin‐Yue Lou ◽  
Yan Wang ◽  
Jun Tang ◽  
Ying‐Wei Yang
Keyword(s):  
Room Temperature ◽  
Recent Advances

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Gel Electrolyte Based Supercapacitors with Higher Capacitances and Lower Resistances than Devices with a Liquid Electrolyte

MRS Advances ◽  
2018 ◽  
Vol 3 (22) ◽  
pp. 1261-1267 ◽  
Author(s):  
Belqasem Aljafari ◽  
Arash Takshi
Keyword(s):  
Polymer Electrolytes ◽  
Room Temperature ◽  
Electrochemical Impedance ◽  
Liquid Electrolyte ◽  
Gel Electrolyte ◽  
Superior Performance ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Gel Electrolytes ◽  
Further Development

ABSTRACTRecently, gel polymer electrolytes (GPEs) have been drawn noteworthy attention for different applications, specifically, for supercapacitors. GPEs could become an excellent substitute to liquid electrolytes (LEs) for making flexible and more durable devices. The performance of two different electrolytes (GPEs and LEs) in multi-wall carbon nanotube based supercapacitors were investigated. In spite of significantly lower conductivity of GPEs than LEs, devices with the gel electrolyte presented a superior performance. More focused has been given in this work on demonstrating the performance of supercapacitors based on GPEs and LEs at different concentrations of the acids ranging from 1M to 3M. Both electrolytes have been characterized at room temperature by making supercapacitors and using cyclic voltammetry, charging-discharging, electrochemical impedance spectroscopy, and leakage tests. The experimental results showed that GPE devices had much better capacitances and resistances compare to the LE based devices. Moreover, the capacitances of all devices were increased proportionally with the increase in the concentration from 1M to 3M, and the resistances were increased inversely with the decreased of concentration. The promising results from the gel electrolytes is encouraging for further development of flexible and high capacitance energy storage devices.

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