Properties of ITO Films Deposited on Plastic Substrate by RF Superimposed DC Magnetron Sputtering Method

2007 ◽  
Vol 124-126 ◽  
pp. 367-370 ◽  
Author(s):  
Do Geun Kim ◽  
Sung Hun Lee ◽  
Mi Rang Park ◽  
Yu Jeong Jeong ◽  
Gun Hwan Lee ◽  
...  
Keyword(s):  
Residual Stress ◽  
Magnetron Sputtering ◽  
Hall Effect ◽  
Stress Measurement ◽  
Hall Effect Measurement ◽  
Plastic Substrate ◽  
Rf Power ◽  
Dc Magnetron Sputtering ◽  
Dc Power ◽  
Ito Films

Tin doped indium oxide (ITO) films were deposited on plastic films by RF superimposed DC magnetron sputtering method using an In2O3 – 10 wt.% SnO2 target without intentionally heating substrates. We have investigated the effects of an RF superimposed DC power system on the electrical, optical, and mechanical properties of the ITO films by using Four-Point Probe, Hall Effect Measurement, UV-Vis-NIR Spectrophotometer, XRD, and Residual Stress Measurement. With increasing the amount of RF power superimposed on DC power, the sputtering discharge voltages of DC power supply were decreased from –290 V to –100 V, i.e., plasma impedance decreased with an increase of the amount of RF power. The resistivity of the samples drastically decreases with increasing RF power, and shows the lowest value of 3.8×10-4 8·cm. Hall effect measurements explain that the increase of carrier mobility is strongly related with the enhancement of the resistivity of ITO films even though there is no difference on its concentration. The RF power superimposed on DC power also reduces the residual stress of the samples up to the stress level of ~ 200 MPa at optimum values of RF power.

Ti-Ca-P Films Formed by RF Magnetron Sputtering Method Using Dual Targets

2007 ◽  
Vol 544-545 ◽  
pp. 495-498 ◽  
Author(s):  
Akira Watazu ◽  
Katsuhiko Kimoto ◽  
Sonoda Tsutomu ◽  
Kinya Tanaka ◽  
Tomoji Sawada ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Titanium Implants ◽  
Rf Power ◽  
Dc Magnetron Sputtering ◽  
Dc Power ◽  
Sputtering Power ◽  
Titanium Target ◽  
Sputtering System

Ti-Ca-P films on commercial pure (cp) titanium plates were uniformly deposited using dual target RF magnetron sputtering apparatus with DC magnetron sputtering system under the conditions of 50 W DC power to a cp titanium target and 200 W RF power to a β-tricalcium phosphate (β-TCP) target for 60 min in 2.2×10-1 Pa Ar. Resulting samples had smooth surface like mirror. Crystal structure of the film was amorphous. The film had the chemical composition of about 3: 1.7: 1: 11 in Ti: Ca: P: O ratio under controlling the β-TCP target RF sputtering power and the titanium target DC sputtering power. The film and the method are expected to be useful for remodeling surfaces of various titanium implants.

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Nanohardness of DC Magnetron Sputtered W – C Coatings as a Function of Composition and Residual Stresses

2015 ◽  
Vol 662 ◽  
pp. 107-110 ◽  
Author(s):  
Michal Novák ◽  
František Lofaj ◽  
Petra Hviščová ◽  
Rudolf Podoba ◽  
Marián Haršáni ◽  
...  
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Magnetron Sputtering ◽  
Linear Increase ◽  
Indentation Modulus ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Compressive Stresses ◽  
Deposition Parameters

The effects of residual stresses in thin W-C based coatings were investigated with the aim to find their influence on nanohardness and indentation modulus. Ten samples of W-C based coatings were deposited on microslide glass substrates using DC magnetron sputtering at the identical deposition parameters. Their thickness was in the range from 500 to 600 nm. The residual stresses in the coatings varied from 1.5 GPa up to 4.4 GPa. Increase of residual stress caused linear increase of HITfrom 16 to 19.5 GPa. This increase was only the result of the compressive stresses. EITof the studied coatings was not sensitive to residual stresses and corresponded to 185 GPa ± 15 GPa.

Preparation and Characterization of Cerium-Doped ITO Films Deposited by DC Magnetron Sputtering

2009 ◽  
Vol 54 (3) ◽  
pp. 1297-1301 ◽  
Author(s):  
Se-Il Kim ◽  
Sang-Hyun Cho ◽  
Pung-Keun Song ◽  
Jin-Ho Lee ◽  
Sung-Ryong Choi ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Ito Films

Effect of annealing treatment on the performances of 40 nm thick p-ITO films prepared by DC magnetron sputtering

2019 ◽  
Vol 34 (4) ◽  
pp. 386-394
Author(s):  
王效坤 WANG Xiao-kun ◽  
朴祥秀 PIAO Xiang-xiu ◽  
孟 雷 MENG Lei ◽  
房伟华 FANG Wei-hua ◽  
刘 飞 LIU Fei
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Treatment ◽  
Dc Magnetron Sputtering ◽  
Ito Films

Influence of the Tin Concentration in Indium Tin Oxide (ITO) Films Deposited by DC Magnetron Sputtering for Touch Panels

2014 ◽  
Vol 9 (3) ◽  
pp. 414-418
Author(s):  
Sang Hyun Cho ◽  
Hyo Jin Kim ◽  
Sung Ho Lee ◽  
Jae IK Woo ◽  
Kyu Ho Song ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Dc Magnetron Sputtering ◽  
Touch Panels ◽  
Ito Films

Effect of Sputtering Gas Pressure and Bias Voltage on Mechanical Properties of TiN Coating Deposited by DC Magnetron Sputtering

2004 ◽  
Author(s):  
Hirotaka Tanabe ◽  
Yoshio Miyoshi ◽  
Tohru Takamatsu ◽  
Hitoshi Awano ◽  
Takaaki Yamano
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Adhesive Strength ◽  
Gas Pressure ◽  
Dc Magnetron Sputtering ◽  
Tin Films ◽  
Bombarding Energy ◽  
Gas Pressures

The mechanical properties of TiN films deposited on carbon steel JIS S45C by reactive dc magnetron sputtering under three sputtering gas pressures, 0.5Pa, 0.8Pa, and 1.76Pa were investigated. The residual stress once increased and then decreased with increasing bias voltage at 0.5Pa and 0.8Pa, but increased monotonously at 1.76Pa. These variations could be explained by the variations of the bombarding energy of a sputtered ion at each gas pressure. The variations of hardness and toughness correlated with the variation of residual stress. The variation of adhesive strength also could be explained by the variation of the bombarding energy with a model proposed in this study. A specific wear rate was also investigated, and it was found that to increase not only the hardness but also the adhesive strength is necessary to improve the wear resistance of TiN films.

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