Control of Bump Morphology in Lead Free Solder Plating for Higher Density Packaging

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001643-001669
Author(s):  
Koji Tatsumi ◽  
Kyouhei Mineo ◽  
Takeshi Hatta ◽  
Takuma Katase ◽  
Masayuki Ishikawa ◽  
...  

Solder bumping is one of the key technologies for flip chip connection. Flip chip connection has been moving forward to its further downsizing and higher integration with new technologies, such as Cu pillar, micro bump and Through Silicon Via (TSV). Unlike some methods like solder printing and ball mounting, electroplating is a very promising technology for upcoming finer bump formation. We have been developing SnAg plating chemical while taking technology progress and customers' needs into consideration at the same time. Today, we see more variety of requests including for high speed plating to increase the productivity and also for high density packaging such as narrowing the bump pitch itself and downsizing of the bump diameter. To meet these technical needs, some adjustments of plating chemical will be necessary. This time we developed new plating chemicals to correspond to bump miniaturization. For instance, our new SnAg chemical can control bump morphology while maintaining the high deposition speed. With our new plating chemicals, we can deposit mushroom bumps that grow vertically against the resist surface, also this new chemicals work effectively to prevent short-circuit between mushroom bumps with fine pitch from forming. In addition, we succeeded in developing high speed Cu pillar plating chemicals that can control the surface morphology to create different shapes. We'd like to present our updates on controlling bump morphology for various applications.




2013 ◽  
Vol 2013 (1) ◽  
pp. 000420-000423
Author(s):  
Kwang-Seong Choi ◽  
Ho-Eun Bae ◽  
Haksun Lee ◽  
Hyun-Cheol Bae ◽  
Yong-Sung Eom

A novel bumping process using solder bump maker (SBM) is developed for fine-pitch flip chip bonding. It features maskless screen printing process with the result that a fine-pitch, low-cost, and lead-free solder-on-pad (SoP) technology can be easily implemented. The process includes two main steps: one is the thermally activated aggregation of solder powder on the metal pads on a substrate and the other is the reflow of the deposited powder on the pads. Only a small quantity of solder powder adjacent to the pads can join the first step, so a quite uniform SoP array on the substrate can be easily obtained regardless of the pad configurations. Through this process, an SoP array on an organic substrate with a pitch of 130 μm is, successfully, formed.



Author(s):  
B. Senthil Kumar ◽  
Bayaras Abito Danila ◽  
Chong Mei Hoe Joanne ◽  
Zhang Rui Fen ◽  
Santosh Kumar Rath ◽  
...  


2013 ◽  
Vol 2013 (1) ◽  
pp. 000458-000460
Author(s):  
Jonathan Prange ◽  
Julia Woertink ◽  
Yi Qin ◽  
Pedro Lopez Montesinos ◽  
Inho Lee ◽  
...  

Flip-chip interconnect and 3-D packaging applications must utilize reliable lead-free solder joints in order to produce highly efficient, advanced microelectronic devices. The solder alloy most commonly utilized for these applications is SnAg, which is typically deposited by electroplating due to lower cost and greater reliability as compared to other methods. The electroplating performance and robustness of SnAg products for bumping and capping applications is highly dependent on the organic additives used in the process. Here, next-generation SnAg products that improve the rate of solder electrodeposition without compromising key requirements such as tight Ag% control, uniform height distribution and smooth surface morphology will be discussed. These plated solders were then evaluated for compatibility with bumping, capping and micro-capping applications.



2012 ◽  
Vol 42 (2) ◽  
pp. 230-239 ◽  
Author(s):  
Ye Tian ◽  
Justin Chow ◽  
Xi Liu ◽  
Yi Ping Wu ◽  
Suresh K. Sitaraman


Author(s):  
Woong Sun Lee ◽  
Myoung Geun Park ◽  
Il Whan Cho ◽  
Sung Chul Kim ◽  
Ki Young Kim ◽  
...  


2013 ◽  
Vol 2013 (1) ◽  
pp. 000235-000235
Author(s):  
Zhe Li ◽  
Siow Chek Tan ◽  
Yee Huan Yew ◽  
Pheak Ti Teh ◽  
MJ Lee ◽  
...  

Cu pillar is an emerging interconnect technology which offers many advantages compared to traditional packaging technologies. This paper presents a novel packaging solution with periphery fine pitch Cu pillar bumps for low cost and high performance Field Programmable Gate Array (FPGA) devices. Wire bonding has traditionally been the choice for low cost implementation of memory interfaces and high speed transceivers. Migration to Cu pillar technology is mainly driven by increasing demand for IO density and package small form factor. Cu pillar bumps also offer significant improvement on electrical performance compared to wire bonds. This paper presents Cu pillar implementation in an 11×11mm flip chip CSP package. Package design is optimized for serial data transport up to 6.114Gbps to meet CPRI_LVII and PCIe Gen2 compliance requirements. Package design strategy includes die and package co-design, SI/PI modeling and physical layout optimization.



2008 ◽  
Vol 47-50 ◽  
pp. 907-911
Author(s):  
Chang Woo Lee ◽  
Y.S. Shin ◽  
J.H. Kim

The growth behaviour of the intermetallic compounds (IMCs) in Pb-free solder bump is investigated. The Pb-free micro-bump, Sn-50%Bi, was fabricated by binary electroplating for flip-chip bond. The diameter of the bump is about 506m and the height is about 60 6m. In order to increase the reliability of the bonding, it is necessary to protect the growth of the IMCs in interface between Cu pad and the solder bump. For control of IMCs growth, SiC particles were distributed in the micro-solder bump during electroplating. The thickness of the IMCs in the interface was estimated by FE-SEM, EDS, XRF and TEM. From the results, The IMCs were found as Cu6Sn5 and Cu3Sn. The thickness of the IMCs decreases with increase the amount of SiC particles until 4 g/cm2. The one candidate of the reasons is that the SiC particles could decrease the area which be reacted between the solder and Cu layer. And another candidate is that the particle can make to difficult inter-diffusion within the interface.



2004 ◽  
Vol 45 (3) ◽  
pp. 754-758 ◽  
Author(s):  
Ikuo Shohji ◽  
Yuji Shiratori ◽  
Hiroshi Yoshida ◽  
Masahiko Mizukami ◽  
Akira Ichida


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