Integration of Electrografted Layers for the Metallization of Deep TSVs
This paper describes production-readiness level of electrografted (eG) and chemical grafted (cG) layers deposited on a wide range of through silicon via (TSV) dimensions. Three layers are required to achieve via metallization: eG insulator, cG barrier, and eG copper seed. Complete characterization of each layer of the stack has been achieved, including electrical and mechanical properties. Impact on the 3D-IC design space of the electrografting nanotechnology optimized for highly conformal growth of TSV films is discussed. Four chemical baths are required to achieve the deposition of the three layers, shelf life, and bath monitoring strategy of each chemistry being presented in the last part of the paper. Some preliminary results of copper plating directly on top of the cG barrier are also reported.