scholarly journals A kinetic model for silicon film growth by silane/hydrogen glow discharge

2010 ◽  
Vol 59 (7) ◽  
pp. 4901
Author(s):  
Zhang Hong-Wei ◽  
Chen Gai-Rong ◽  
Zhang Li-Wei ◽  
Lu Jing-Xiao ◽  
Wen Shu-Tang
Keyword(s):  
Kinetic Model ◽  
Glow Discharge ◽  
Film Growth ◽  
Silicon Film

Initial stage of semiinsulating polycrystalline silicon film growth

2008 ◽  
Vol 37 (6) ◽  
pp. 349-355
Author(s):  
A. S. Turtsevich ◽  
O. Yu. Nalivaiko ◽  
V. A. Solodukha ◽  
V. V. Glukhmanchuk ◽  
N. G. Tsirkunova ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Film Growth ◽  
Silicon Film ◽  
Initial Stage ◽  
Polycrystalline Silicon Film

Kinetics of silicon film growth and the deposition phase diagram

2004 ◽  
Vol 338-340 ◽  
pp. 13-18 ◽  
Author(s):  
G.M. Ferreira ◽  
A.S. Ferlauto ◽  
Chi Chen ◽  
R.J. Koval ◽  
J.M. Pearce ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Film Growth ◽  
Silicon Film ◽  
Kinetics Of

Heteroepitaxial silicon film growth at 600°C from an Al–Si eutectic melt

2010 ◽  
Vol 518 (19) ◽  
pp. 5368-5371 ◽  
Author(s):  
P. Chaudhari ◽  
Heejae Shim ◽  
Brent A. Wacaser ◽  
Mark C. Reuter ◽  
Conal Murray ◽  
...  
Keyword(s):  
Film Growth ◽  
Silicon Film ◽  
Eutectic Melt

VARIATION OF IN-PLANE LATTICE CONSTANT OF Si/Ge/Si HETEROSTRUCTURES WITH Ge QUANTUM DOTS

2007 ◽  
Vol 06 (03n04) ◽  
pp. 297-299 ◽  
Author(s):  
ALEXANDER NIKIFOROV ◽  
VLADIMIR ULYANOV ◽  
ROMAN SHAIDUK ◽  
SERGEY TEYS ◽  
ANTON GUTAKOVSKY ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Dots ◽  
Lattice Constant ◽  
Film Growth ◽  
Strain Relaxation ◽  
Silicon Film ◽  
Lattice Constants ◽  
Plane Lattice ◽  
Si Films ◽  
Elastic Strains

Experimental data are presented on variations of the in-plane lattice constant of Ge and Si films in the course of the MBE film growth on the silicon (100) surface. The in-plane lattice constant of the silicon film is shown to alter as the film grows; the changes reflect the process of relaxation of elastic strains that result from the misfit of the germanium and silicon lattice constants. Due to the presence of germanium islands, a considerably thicker silicon film is required to provide the strain relaxation. The dependence of distortion penetration depth to the silicon film on the effective germanium film thickness is obtained. TEM studies indicate the vertical ordering of the germanium island layers when the thickness of the Si layer in between Ge layers is not sufficient to provide the full strain relaxation.

Kinetic model of a DC oxygen glow discharge

1989 ◽  
Vol 9 (2) ◽  
pp. 189-206 ◽  
Author(s):  
G. Gousset ◽  
M. Touzeau ◽  
M. Vialle ◽  
C. M. Ferreira
Keyword(s):  
Kinetic Model ◽  
Glow Discharge
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