Effect of indium doping on low-voltage ZnO nanocrystal field-effect transistors with ion-gel gate dielectric

2014 ◽  
Vol 53 (7) ◽  
pp. 071101 ◽  
Author(s):  
Jungwoo Kim ◽  
Ji-Hyuk Choi ◽  
Heeyeop Chae ◽  
Hyoungsub Kim
2011 ◽  
Vol 3 (12) ◽  
pp. 4662-4667 ◽  
Author(s):  
Yaorong Su ◽  
Chengliang Wang ◽  
Weiguang Xie ◽  
Fangyan Xie ◽  
Jian Chen ◽  
...  

Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8695-8700 ◽  
Author(s):  
Changjian Zhou ◽  
Xinsheng Wang ◽  
Salahuddin Raju ◽  
Ziyuan Lin ◽  
Daniel Villaroman ◽  
...  

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.


2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.


2010 ◽  
Vol 22 (4) ◽  
pp. 1559-1566 ◽  
Author(s):  
Xiaoyang Cheng ◽  
Mario Caironi ◽  
Yong-Young Noh ◽  
Jianpu Wang ◽  
Christopher Newman ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 518 ◽  
Author(s):  
Xiong Chen ◽  
Hao Zhang ◽  
Yu Zhang ◽  
Xiangfeng Guan ◽  
Zitong Zhang ◽  
...  

Polymer-ceramic dielectric composites have been of great interest because they combine the processability of polymers with the desired dielectric properties of the ceramics. We fabricated a low voltage-operated flexible organic field-effect transistor (OFET) based on crosslinked poly (4-vinyl phenol) (PVP) polymer blended with novel ceramic calcium titanate nanoparticles (CaTiO3 NPs) as gate dielectric. To reduce interface roughness caused by nanoparticles, it was further coated with a very thin PVP film. The resulting OFET exhibited much lower operated voltage (reducing from –10.5 V to –2.9 V), a relatively steeper threshold slope (~0.8 V/dec) than those containing a pure PVP dielectric. This is ascribed to the high capacitance of the CaTiO3 NP-filled PVP insulator, and its smoother and hydrophobic dielectric surface proved by atomic force microscopy (AFM) and a water contact angle test. We also evaluated the transistor properties in a compressed state. The corresponding device had no significant degradation in performance when bending at various diameters. In particular, it operated well continuously for 120 hours during a constant bending stress. We believe that this technology will be instrumental in the development of future flexible and printed electronic applications.


2017 ◽  
Vol 29 (9) ◽  
pp. 4008-4013 ◽  
Author(s):  
Yongsuk Choi ◽  
Junmo Kang ◽  
Deep Jariwala ◽  
Spencer A. Wells ◽  
Moon Sung Kang ◽  
...  

2020 ◽  
Vol 515 ◽  
pp. 145988
Author(s):  
Jaeyoung Kim ◽  
Woobin Lee ◽  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Jae-Sang Heo ◽  
...  

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