scholarly journals Different Vacuum Pad Design Effects with Z-Picker Assembly

2021 ◽  
pp. 104-109
Author(s):  
Allen Jay D. Kumawit ◽  
Maria Virginia S. Buera ◽  
Mariane A. Mendoza ◽  
Frederick Ray I. Gomez
Keyword(s):  
Yield Loss ◽  
Single Units ◽  
Vacuum Suction ◽  
Design Effects ◽  
Pick And Place

After singulation process where the strips are being cut into single units, unit tray loading comes next. Unit tray loading is the process where the singulated units will be picked up from the table and then place it in a tray pocket. Z-picker assembly executes the pick and placing activity through vacuum suction. Vacuum pads were installed on the Z-picker’s vacuum pad holder area, and it contacts with the unit. Vacuum pads come with different design depending on dimension and configuration of the device in process. Pick and place process is prone for unit dislodge as it transfers the unit from one place to another. These unit dislodges will result to missing units and will be accounted for yield loss. In this study, the authors were driven to understand the Z-picker mechanism together with the effect of vacuum pad designs, aiming to find the best match that would lessen the occurrence of unit dislodges.

Design of spline surface vacuum gripper for pick and place robotic arms

2020 ◽  
Vol 4 (2) ◽  
pp. 48-55
Author(s):  
A. S. Jamaludin ◽  
M. N. M. Razali ◽  
N. Jasman ◽  
A. N. A. Ghafar ◽  
M. A. Hadi
Keyword(s):  
Cycle Time ◽  
Industrial Robot ◽  
Annealing Process ◽  
Vacuum Suction ◽  
Robotic Arms ◽  
Custom Made ◽  
Pick And Place ◽  
Manufacturing Procedure ◽  
Production Flexibility ◽  
The Impact

The gripper is the most important part in an industrial robot. It is related with the environment around the robot. Today, the industrial robot grippers have to be tuned and custom made for each application by engineers, by searching to get the desired repeatability and behaviour. Vacuum suction is one of the grippers in Watch Case Press Production (WCPP) and a mechanism to improve the efficiency of the manufacturing procedure. Pick and place are the important process for the annealing process. Thus, by implementing vacuum suction gripper, the process of pick and place can be improved. The purpose of vacuum gripper other than design vacuum suction mechanism is to compare the effectiveness of vacuum suction gripper with the conventional pick and place gripper. Vacuum suction gripper is a mechanism to transport part and which later sequencing, eliminating and reducing the activities required to complete the process. Throughout this study, the process pick and place became more effective, the impact on the production of annealing process is faster. The vacuum suction gripper can pick all part at the production which will lower the loss of the productivity. In conclusion, vacuum suction gripper reduces the cycle time about 20%. Vacuum suction gripper can help lower the cycle time of a machine and allow more frequent process in order to increase the production flexibility.

Hearing in Mice via GSR Audiometry

1963 ◽  
Vol 6 (4) ◽  
pp. 359-368 ◽  
Author(s):  
Charles I. Berlin
Keyword(s):  
Inverse Relationship ◽  
Sound Pressure ◽  
Single Units ◽  
Sensitivity Curve ◽  
Basic Tool ◽  
Eighth Nerve ◽  
Pure Tones ◽  
Conditioned Responses ◽  
Frequency Intensity ◽  
Near Threshold

Hearing in mice has been difficult to measure behaviorally. With GSR as the basic tool, the sensitivity curve to pure tones in mice has been successfully outlined. The most sensitive frequency-intensity combination was 15 000 cps at 0-5 dB re: 0.0002 dyne/cm 2 , with responses noted from 1 000 to beyond 70 000 cps. Some problems of reliability of conditioning were encountered, as well as findings concerning the inverse relationship between the size of GSR to unattenuated tones and the sound pressure necessary to elicit conditioned responses at or near threshold. These data agree well with the sensitivity of single units of the eighth nerve of the mouse.

Hearing in Mice by GSR Audiometry: II. Magnitude of Unconditioned GSR as a Function of Intensity and Frequency Interactions

1968 ◽  
Vol 11 (1) ◽  
pp. 169-178 ◽  
Author(s):  
Alan Gill ◽  
Charles I. Berlin
Keyword(s):  
Power Law ◽  
Response Magnitude ◽  
Single Units ◽  
Spectral Content ◽  
Hearing Sensitivity ◽  
Subjective Magnitude ◽  
Orderly Fashion ◽  
Viiith Nerve

The unconditioned GSR’s elicited by tones of 60, 70, 80, and 90 dB SPL were largest in the mouse in the ranges around 10,000 Hz. The growth of response magnitude with intensity followed a power law (10 .17 to 10 .22 , depending upon frequency) and suggested that the unconditioned GSR magnitude assessed overall subjective magnitude of tones to the mouse in an orderly fashion. It is suggested that hearing sensitivity as assessed by these means may be closely related to the spectral content of the mouse’s vocalization as well as to the number of critically sensitive single units in the mouse’s VIIIth nerve.

Design-Effects in Prospective and Retrospective Memory for Actions

2003 ◽  
Vol 50 (1) ◽  
pp. 4-15 ◽  
Author(s):  
Petra Jahn ◽  
Johannes Engelkamp
Keyword(s):  
Prospective Memory ◽  
Memory Task ◽  
Prospective Memory Task ◽  
Retrospective Memory ◽  
Ample Evidence ◽  
Relational Information ◽  
Design Effects ◽  
Verbal Tasks ◽  
Within Subjects

There is ample evidence that memory for action phrases such as “open the bottle” is better in subject-performed tasks (SPTs), i.e., if the participants perform the actions, than in verbal tasks (VTs), if they only read the phrases or listen to them. It is less clear whether also the sole intention to perform the actions later, i.e., a prospective memory task (PT), improves memory compared with VTs. Inconsistent findings have been reported for within-subjects and between-subjects designs. The present study attempts to clarify the situation. In three experiments, better recall for SPTs than for PTs and for PTs than for VTs were observed if mixed lists were used. If pure lists were used, there was a PT effect but no SPT over PT advantage. The findings were discussed from the perspective of item-specific and relational information.

Elemental chlorine-free bleaching of North American hardwood kraft pulps: Evaluation of oxidant-reinforced extraction variables on overall bleaching optimization

TAPPI Journal ◽  
2013 ◽  
Vol 12 (10) ◽  
pp. 33-41 ◽  
Author(s):  
BRIAN N. BROGDON
Keyword(s):  
Response Surface ◽  
Chlorine Dioxide ◽  
North American ◽  
Yield Loss ◽  
Alkaline Extraction ◽  
Kraft Pulps ◽  
Pulp Bleaching ◽  
Response Surface Models ◽  
Elemental Chlorine ◽  
Surface Models

This investigation evaluates how higher reaction temperatures or oxidant reinforcement of caustic extraction affects chlorine dioxide consumption during elemental chlorine-free bleaching of North American hardwood pulps. Bleaching data from the published literature were used to develop statistical response surface models for chlorine dioxide delignification and brightening sequences for a variety of hardwood pulps. The effects of higher (EO) temperature and of peroxide reinforcement were estimated from observations reported in the literature. The addition of peroxide to an (EO) stage roughly displaces 0.6 to 1.2 kg chlorine dioxide per kilogram peroxide used in elemental chlorine-free (ECF) bleach sequences. Increasing the (EO) temperature by Δ20°C (e.g., 70°C to 90°C) lowers the overall chlorine dioxide demand by 0.4 to 1.5 kg. Unlike what is observed for ECF softwood bleaching, the presented findings suggest that hot oxidant-reinforced extraction stages result in somewhat higher bleaching costs when compared to milder alkaline extraction stages for hardwoods. The substitution of an (EOP) in place of (EO) resulted in small changes to the overall bleaching cost. The models employed in this study did not take into account pulp bleaching shrinkage (yield loss), to simplify the calculations.

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

Systematic Defect Identification through Layout Snippet Clustering

2010 ◽  
Author(s):  
Wing Chiu Tam ◽  
Osei Poku ◽  
R. D. (Shawn) Blanton
Keyword(s):  
Design Process ◽  
Integrated Circuit ◽  
Yield Loss ◽  
Defect Identification ◽  
Clustering Techniques ◽  
Dominant Component

Abstract Systematic defects due to design-process interactions are a dominant component of integrated circuit (IC) yield loss in nano-scaled technologies. Test structures do not adequately represent the product in terms of feature diversity and feature volume, and therefore are unable to identify all the systematic defects that affect the product. This paper describes a method that uses diagnosis to identify layout features that do not yield as expected. Specifically, clustering techniques are applied to layout snippets of diagnosis-implicated regions from (ideally) a statistically-significant number of IC failures for identifying feature commonalties. Experiments involving an industrial chip demonstrate the identification of possible systematic yield loss due to lithographic hotspots.

Analysis of Leakage Failures in Flash Memory Devices and Root Cause Identification

2000 ◽  
Author(s):  
J. N. C. de Luna ◽  
M. O. del Fierro ◽  
J. L. Muñoz
Keyword(s):  
Flash Memory ◽  
Electromagnetic Interference ◽  
Yield Loss ◽  
High Amplitude ◽  
Physical Analysis ◽  
Input Buffer ◽  
Automated Test Equipment ◽  
Root Cause ◽  
Root Cause Identification ◽  
Test Process

Abstract An advanced flash bootblock device was exceeding current leakage specifications on certain pins. Physical analysis showed pinholes on the gate oxide of the n-channel transistor at the input buffer circuit of the affected pins. The fallout contributed ~1% to factory yield loss and was suspected to be caused by electrostatic discharge or ESD somewhere in the assembly and test process. Root cause investigation narrowed down the source to a charged core picker inside the automated test equipment handlers. By using an electromagnetic interference (EMI) locator, we were able to observe in real-time the high amplitude electromagnetic pulse created by this ESD event. Installing air ionizers inside the testers solved the problem.

BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section

1997 ◽  
Author(s):  
J. Douglass ◽  
T. D. Myers ◽  
F. Tsai ◽  
R. Ketcheson ◽  
J. Errett
Keyword(s):  
Electron Microscopy ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Yield Loss ◽  
Process Analysis ◽  
Ion Beam ◽  
Yield Improvement ◽  
Transmission Electron ◽  
Defect Mechanism ◽  
Water Residue

Abstract This paper describes how the authors used a combination of focused ion beam (FIB) microprobing, transmission electron microscopy (TEM), and data and process analysis to determine that localized water residue was causing a 6% yield loss at die sort.

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

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