scholarly journals Magnetoresistance Recovery in the Amorphous Dielectric Material SiCOH

Author(s):  
Philip A. Williams ◽  
James R. Lloyd

The use of a magnetoresistance in the characterization of transport properties in the amorphous low-k dielectric material SiCOH is demonstrated. The double occupancy of charge carriers in trap states within the dielectric material can only exist in spin singlet formation due to Pauli Exclusion. The trap-assisted negative magnetoresistance (MR) in amorphous SiCOH, driven by an applied electric field that results in an observed increase in magnitude of the current in the conduction band is due to singly occupied trap spin-mixing suppression of carriers with the application of an external magnetic field. The material MR decays with time under electrical bias and temperature stress as traps are filled by charge carriers and from space charge accumulation. The MR can be reinstated by the ionization of these traps via the conduction mechanisms of nonthermally activated tunneling and thermal ionization with the assistance of an applied coulombic potential barrier lowering electric field. In this work a direct correlation is shown between a material MR and the trapping, de-trapping, and trap avoidance of singly occupied traps in the transport of charge carriers in the amorphous low-k dielectric material SiCOH (a-SiCOH).

2015 ◽  
Vol 27 (3) ◽  
pp. 414-418 ◽  
Author(s):  
Sude Ma ◽  
Yan Wang ◽  
Chun Liu ◽  
Qian Xu ◽  
Zhonghua Min

2004 ◽  
Vol 812 ◽  
Author(s):  
B. Ramana Murthy ◽  
C.K. Chang ◽  
Ahilakrishnamoorthy ◽  
Y.W. Chen ◽  
Ananth Naman

AbstractNANOGLASS®E (NGE) ultra low-k (ULK) dielectric material, with a k-value of ∼2.2, was integrated for 130 nm Cu/ULK interconnect process technology. This work deals with the characterization of reactive ion etching (RIE) and wet chemical processing of this film. Blanket films were characterized for etch rate, surface roughness, k-value change and chemical compatibility. Trench etching and post etch wet clean processes were developed and optimized enabling process integration for single damascene structures. Trench etch processes were evaluated for two etch schemes viz., etching under - photo resist and etching under hardmask. The details of each scheme will be described and advantages observed will be discussed. To evaluate effect of wet clean processes three different formulations were used. After formation of single damascene wafers, metal comb and serpentine structures were measured for metal continuity and bridging. Electrical continuity was achieved for long serpentine structures with 0.18μm/0.18μm line width/spacing. Based on voltage ramp test results the film was found to be sensitive to certain plasma etch conditions.


Nanoscale ◽  
2020 ◽  
Vol 12 (19) ◽  
pp. 10559-10564
Author(s):  
Fengshan Zheng ◽  
Giulio Pozzi ◽  
Vadim Migunov ◽  
Luka Pirker ◽  
Maja Remškar ◽  
...  

Electric field map and equipotential contour lines of a quasi-one-dimensional W5O14 nanowire under an electrical bias of 150 V. Experimental cumulative charge profiles along the length of the nanowire are consistent with theoretical simulations.


2019 ◽  
Author(s):  
Chem Int

Model was developed for the prediction of polarization characteristics in a dielectric material exhibiting piezoelectricity and electrostriction based on mathematical equations and MATLAB computer simulation software. The model was developed based on equations of polarization and piezoelectric constitutive law and the functional coefficient of Lead Zirconate Titanate (PZT) crystal material used was 2.3×10-6 m (thickness), the model further allows the input of basic material and calculation of parameters of applied voltage levels, applied stress, pressure, dielectric material properties and so on, to generate the polarization curve, strain curve and the expected deformation change in the material length charts. The mathematical model revealed that an application of 5 volts across the terminals of a 2.3×10-6 m thick dielectric material (PZT) predicted a 1.95×10-9 m change in length of the material, which indicates piezoelectric properties. Both polarization and electric field curve as well as strain and voltage curve were also generated and the result revealed a linear proportionality of the compared parameters, indicating a resultant increase in the electric field yields higher polarization of the dielectric materials atmosphere.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saleem Farooq ◽  
Ruqeya Nazir ◽  
Shabir Ahmad Ganai ◽  
Bashir Ahmad Ganai

AbstractAs an approach to the exploration of cold-active enzymes, in this study, we isolated a cold-active protease produced by psychrotrophic bacteria from glacial soils of Thajwas Glacier, Himalayas. The isolated strain BO1, identified as Bacillus pumilus, grew well within a temperature range of 4–30 °C. After its qualitative and quantitative screening, the cold-active protease (Apr-BO1) was purified. The Apr-BO1 had a molecular mass of 38 kDa and showed maximum (37.02 U/mg) specific activity at 20 °C, with casein as substrate. It was stable and active between the temperature range of 5–35 °C and pH 6.0–12.0, with an optimum temperature of 20 °C at pH 9.0. The Apr-BO1 had low Km value of 1.0 mg/ml and Vmax 10.0 µmol/ml/min. Moreover, it displayed better tolerance to organic solvents, surfactants, metal ions and reducing agents than most alkaline proteases. The results exhibited that it effectively removed the stains even in a cold wash and could be considered a decent detergent additive. Furthermore, through protein modelling, the structure of this protease was generated from template, subtilisin E of Bacillus subtilis (PDB ID: 3WHI), and different methods checked its quality. For the first time, this study reported the protein sequence for psychrotrophic Apr-BO1 and brought forth its novelty among other cold-active proteases.


Author(s):  
Tingting Cai ◽  
Qing Chang ◽  
Bin Liu ◽  
Caihong Hao ◽  
Jinlong Yang ◽  
...  

The photocatalyst performance highly relies on the quantity of carrier transfer from the bulk to surface during the catalytic process. However, the polarization electric field induced by charge accumulation at...


Sign in / Sign up

Export Citation Format

Share Document