Preparation and characterization of nanoporous polyimide membrane by the template method as low-k dielectric material

2015 ◽  
Vol 27 (3) ◽  
pp. 414-418 ◽  
Author(s):  
Sude Ma ◽  
Yan Wang ◽  
Chun Liu ◽  
Qian Xu ◽  
Zhonghua Min
Keyword(s):  
Dielectric Material ◽  
Template Method ◽  
Polyimide Membrane ◽  
Low K

Dry Etch and Wet Clean Process Characterization of Ultra Low-k (ULK) Material Nanoglass®E

2004 ◽  
Vol 812 ◽  
Author(s):  
B. Ramana Murthy ◽  
C.K. Chang ◽  
Ahilakrishnamoorthy ◽  
Y.W. Chen ◽  
Ananth Naman
Keyword(s):  
Process Integration ◽  
Dielectric Material ◽  
Process Technology ◽  
Plasma Etch ◽  
K Value ◽  
Process Characterization ◽  
Voltage Ramp ◽  
Dry Etch ◽  
Low K

AbstractNANOGLASS®E (NGE) ultra low-k (ULK) dielectric material, with a k-value of ∼2.2, was integrated for 130 nm Cu/ULK interconnect process technology. This work deals with the characterization of reactive ion etching (RIE) and wet chemical processing of this film. Blanket films were characterized for etch rate, surface roughness, k-value change and chemical compatibility. Trench etching and post etch wet clean processes were developed and optimized enabling process integration for single damascene structures. Trench etch processes were evaluated for two etch schemes viz., etching under - photo resist and etching under hardmask. The details of each scheme will be described and advantages observed will be discussed. To evaluate effect of wet clean processes three different formulations were used. After formation of single damascene wafers, metal comb and serpentine structures were measured for metal continuity and bridging. Electrical continuity was achieved for long serpentine structures with 0.18μm/0.18μm line width/spacing. Based on voltage ramp test results the film was found to be sensitive to certain plasma etch conditions.

scholarly journals Magnetoresistance Recovery in the Amorphous Dielectric Material SiCOH

2021 ◽  
pp. 9-17
Author(s):  
Philip A. Williams ◽  
James R. Lloyd
Keyword(s):  
Electric Field ◽  
Dielectric Material ◽  
Charge Carriers ◽  
Charge Accumulation ◽  
Trap States ◽  
Spin Singlet ◽  
Amorphous Dielectric ◽  
Electrical Bias ◽  
Low K

The use of a magnetoresistance in the characterization of transport properties in the amorphous low-k dielectric material SiCOH is demonstrated. The double occupancy of charge carriers in trap states within the dielectric material can only exist in spin singlet formation due to Pauli Exclusion. The trap-assisted negative magnetoresistance (MR) in amorphous SiCOH, driven by an applied electric field that results in an observed increase in magnitude of the current in the conduction band is due to singly occupied trap spin-mixing suppression of carriers with the application of an external magnetic field. The material MR decays with time under electrical bias and temperature stress as traps are filled by charge carriers and from space charge accumulation. The MR can be reinstated by the ionization of these traps via the conduction mechanisms of nonthermally activated tunneling and thermal ionization with the assistance of an applied coulombic potential barrier lowering electric field. In this work a direct correlation is shown between a material MR and the trapping, de-trapping, and trap avoidance of singly occupied traps in the transport of charge carriers in the amorphous low-k dielectric material SiCOH (a-SiCOH).

scholarly journals Isolation and characterization of a new cold-active protease from psychrotrophic bacteria of Western Himalayan glacial soil

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saleem Farooq ◽  
Ruqeya Nazir ◽  
Shabir Ahmad Ganai ◽  
Bashir Ahmad Ganai
Keyword(s):  
Specific Activity ◽  
Temperature Range ◽  
Psychrotrophic Bacteria ◽  
Isolation And Characterization ◽  
Cold Active ◽  
Active Protease ◽  
Quantitative Screening ◽  
First Time ◽  
Low K

AbstractAs an approach to the exploration of cold-active enzymes, in this study, we isolated a cold-active protease produced by psychrotrophic bacteria from glacial soils of Thajwas Glacier, Himalayas. The isolated strain BO1, identified as Bacillus pumilus, grew well within a temperature range of 4–30 °C. After its qualitative and quantitative screening, the cold-active protease (Apr-BO1) was purified. The Apr-BO1 had a molecular mass of 38 kDa and showed maximum (37.02 U/mg) specific activity at 20 °C, with casein as substrate. It was stable and active between the temperature range of 5–35 °C and pH 6.0–12.0, with an optimum temperature of 20 °C at pH 9.0. The Apr-BO1 had low Km value of 1.0 mg/ml and Vmax 10.0 µmol/ml/min. Moreover, it displayed better tolerance to organic solvents, surfactants, metal ions and reducing agents than most alkaline proteases. The results exhibited that it effectively removed the stains even in a cold wash and could be considered a decent detergent additive. Furthermore, through protein modelling, the structure of this protease was generated from template, subtilisin E of Bacillus subtilis (PDB ID: 3WHI), and different methods checked its quality. For the first time, this study reported the protein sequence for psychrotrophic Apr-BO1 and brought forth its novelty among other cold-active proteases.

scholarly journals Full characterization of ultrathin 5-nm low- k dielectric bilayers: Influence of dopants and surfaces on the mechanical properties

2020 ◽  
Vol 4 (7) ◽  
Author(s):  
Travis D. Frazer ◽  
Joshua L. Knobloch ◽  
Jorge N. Hernández-Charpak ◽  
Kathleen M. Hoogeboom-Pot ◽  
Damiano Nardi ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Full Characterization ◽  
Low K

The Study of Fluorinated Amorphous Carbon as Low-K Dielectric Material and its Interface with Copper Metallization

1999 ◽  
Vol 565 ◽  
Author(s):  
N. Ariel ◽  
M. Eizenberg ◽  
E. Y. Tzou
Keyword(s):  
Amorphous Carbon ◽  
Nuclear Reactions ◽  
Dielectric Material ◽  
Copper Metallization ◽  
Limiting Factor ◽  
Adhesion Promoter ◽  
Adhesion Promotion ◽  
High Resolution Tem ◽  
Rc Delay ◽  
Low K

AbstractIn order to achieve better performance of devices, the interconnects RC delay time, the limiting factor of the device speed today, must be reduced. This calls for a new interconnect stack: lower resistivity Copper and low k materials (k<3) as dielectrics.Fluorinated amorphous carbon (a-F:C) prepared by HDP- CVD is an attractive candidate as a low-k material. In this work we have studied the film, its stability and its interface with Copper metallization. The high density plasma CVD process resulted in a film which contains C and F at a ratio of 1:0.6 as determined by Nuclear Reactions Analysis. XPS analysis of the Cls transition indicated four types of bonds: C-C, C-CF, CF, and CF2. X-ray diffraction as well as high resolution TEM analyses proved that the film was amorphous at least up to 500°C anneal. For various applications, the advantage of adding a thin bi-layer of a-SiC/SiOx for adhesion promotion purposes was demonstrated. In addition, the interface of a-F:C and the adhesion promoter layer with Ta, TaN and Cu was studied. No interdiffusion was observed by SIMS after 400°C annealing. 500°C annealing caused F outdiffusion from the film and Cu diffusion into the adhesion promoter layer.

scholarly journals Fabrication of Superconducting Nanowires Using the Template Method

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1970
Author(s):  
Michael Rudolf Koblischka ◽  
Anjela Koblischka-Veneva
Keyword(s):  
High Temperature ◽  
High Temperature Superconductors ◽  
Sol Gel ◽  
Template Method ◽  
Aao Template ◽  
Superconducting Nanowires ◽  
Research Directions ◽  
Templating Method ◽  
Fabrication And Characterization

The fabrication and characterization of superconducting nanowires fabricated by the anodic aluminium oxide (AAO) template technique has been reviewed. This templating method was applied to conventional metallic superconductors, as well as to several high-temperature superconductors (HTSc). For filling the templates with superconducting material, several different techniques have been applied in the literature, including electrodeposition, sol-gel techniques, sputtering, and melting. Here, we discuss the various superconducting materials employed and the results obtained. The arising problems in the fabrication process and the difficulties concerning the separation of the nanowires from the templates are pointed out in detail. Furthermore, we compare HTSc nanowires prepared by AAO templating and electrospinning with each other, and give an outlook to further research directions.

Film Characterization of Ultra Low-k Dielectrics Modified by UV Curing with Different Wavelength Bands

2006 ◽  
Vol 914 ◽  
Author(s):  
Masazumi Matsuura ◽  
Kinya Goto ◽  
Noriko Miura ◽  
Shinobu Hashii ◽  
Koyu Asai
Keyword(s):  
Molecular Motion ◽  
Uv Curing ◽  
Lattice Relaxation ◽  
Lattice Relaxation Time ◽  
Spin Lattice Relaxation ◽  
Raman Analysis ◽  
Spin Lattice ◽  
Ft Ir ◽  
Low K

AbstractThis paper describes film characterization of Ultra Low-k (ULK) dielectrics modified by UV curing with different wavelength bands. We have demonstrated UV hardening of ULK-SiOC (k=2.65) with two types of UV bulbs (UV-X and UV-Y) and the UV modifications of ULK-SiOC film properties are characterized by using FT-IR spectroscopy, 29Si Solid-state NMR spectroscopy and Raman spectroscopy. FT-IR and NMR analyses reveal that UV-Y curing is preferable for UV curing modification of ULK-SiOC. UV-Y curing increases Q mode peak in NMR, resulting in the enhanced Si-O crosslinking, while UV-X curing increases TH mode and TOR mode peaks. Spin lattice relaxation time T1 for 29Si is decreased with UV curing. This result indicates that UV curing enhances molecular motion in Si-O network. Raman analysis shows that UV curing increases amorphous carbon groups, which corresponds to the enhanced molecular motion in Si-O network.

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