500℃ high-temperature reliability of Ni/Nb Ohmic contact on n-type 4H-SiC

2021 ◽  
Author(s):  
Vuong Van Cuong ◽  
Tadashi Sato ◽  
Takamichi Miyazaki ◽  
Tetsuya Meguro ◽  
Seiji Ishikawa ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contact ◽  
Chemical Compounds ◽  
Etching Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Current Voltage ◽  
The Stability

Abstract The reliability of Ni/Nb ohmic contact on n-type 4H-SiC at 500℃ was investigated. The current-voltage characteristics showed that, while the Ni(50)/Nb(50)/4H-SiC sample without applying the CF4:O2 etching process degraded just after 25-hour and lost ohmic behavior after 50-hour aging, the Ni(75)/Nb(25)/4H-SiC contact undergone CF4:O2 surface treatment still showed excellent stability after aging for 100 hours at 500℃. Though X-ray diffraction results indicated that the chemical compounds remained stable during the aging process, transmission electron microscopy showed that there was a redistribution of the chemical compounds at the interface of the contact after 500℃ aging. The depth distribution of the elements and energy dispersive X-ray analyses revealed that the contribution of carbon agglomeration at the interface accounted for the degradation of the sample without applying the etching process. Whereas the well-controlled excess carbon atoms of the contact undergone CF4:O2 treatment ensured the stability of this contact when operating at high-temperature ambient.

Metallurgical and Electrical Properties of Capped Au-based Metallizations on GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
X. W. Lin ◽  
A. Piotrowska ◽  
E. Kaminska ◽  
Z. Liliental-Weber ◽  
J. Washburn
Keyword(s):  
Electron Microscopy ◽  
Electrical Properties ◽  
Ohmic Contact ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Interface ◽  
Transmission Electron ◽  
Current Voltage ◽  
Ohmic Contact Formation ◽  
Electrical Data

ABSTRACTGold-based contacts on GaAs, i.e., Au(Te)/n-GaAs, Au(Ge)/n-GaAs, and Au(Zn)/p- GaAs, were annealed with or without an Al2O3 cap, in order to examine the effects of capping on their metallurgical and electrical properties. Current-voltage measurements showed that ohmic contact can be formed for all the metallizations, except capped Au(Te) which remained nonohmic even after annealing up to 480°C. Transmission electron microscopy and x-ray diffraction observations showed that the reactions between a contact and GaAs can be strongly affected by a capping layer. For all uncapped contacts, annealing generally resulted in growth of Au-Ga compounds and nonuniform contact morphology, whereas capped Au(Ge) and Au(Zn) contacts were stable and retained flat interface with GaAs. Capped Au(Te) was found to be unstable, reacting extensively with GaAs, due to the presence of Te. Electrical data are explained in terms of the doping model for ohmic contact formation.

scholarly journals Facile Organometallic Synthesis of Fe-Based Nanomaterials by Hot Injection Reaction

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1141
Author(s):  
Georgia Basina ◽  
Hafsa Khurshid ◽  
Nikolaos Tzitzios ◽  
George Hadjipanayis ◽  
Vasileios Tzitzios
Keyword(s):  
Room Temperature ◽  
Colloidal Particles ◽  
Iron Pentacarbonyl ◽  
Vibrating Sample Magnetometer ◽  
X Ray Diffraction ◽  
Organometallic Synthesis ◽  
X Ray ◽  
Transmission Electron ◽  
Hot Injection ◽  
The Stability

Fe-based colloids with a core/shell structure consisting of metallic iron and iron oxide were synthesized by a facile hot injection reaction of iron pentacarbonyl in a multi-surfactant mixture. The size of the colloidal particles was affected by the reaction temperature and the results demonstrated that their stability against complete oxidation related to their size. The crystal structure and the morphology were identified by powder X-ray diffraction and transmission electron microscopy, while the magnetic properties were studied at room temperature with a vibrating sample magnetometer. The injection temperature plays a very crucial role and higher temperatures enhance the stability and the resistance against oxidation. For the case of injection at 315 °C, the nanoparticles had around a 10 nm mean diameter and revealed 132 emu/g. Remarkably, a stable dispersion was created due to the colloids’ surface functionalization in a nonpolar solvent.

Effect of Au distribution in NiO/Au film on the ohmic contact formation to p-type GaN

2005 ◽  
Vol 20 (2) ◽  
pp. 456-463 ◽  
Author(s):  
Jiin-Long Yang ◽  
J.S. Chen ◽  
S.J. Chang
Keyword(s):  
Electron Microscopy ◽  
Ohmic Contact ◽  
Incident Angle ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Specific Contact ◽  
P Type

The distribution of Au and NiO in NiO/Au ohmic contact on p-type GaN was investigated in this work. Au (5 nm) films were deposited on p-GaN substrates by magnetron sputtering. Some of the Au films were preheated in N2 ambient to agglomerate into semi-connected structure (abbreviated by agg-Au); others were not preheated and remained the continuous (abbreviated by cont-Au). A NiO film (5 nm) was deposited on both types of samples, and all samples were subsequently annealed in N2 ambient at the temperatures ranging from 100 to 500 °C. The surface morphology, phases, and cross-sectional microstructure were investigated by scanning electron microscopy, glancing incident angle x-ray diffraction, and transmission electron microscopy. I-V measurement on the contacts indicates that only the 400 °C annealed NiO/cont-Au/p-GaN sample exhibits ohmic behavior and its specific contact resistance (ρc) is 8.93 × 10−3 Ω cm2. After annealing, Au and NiO contact to GaN individually in the NiO/agg-Au/p-GaN system while the Au and NiO layers become tangled in the NiO/cont-Au/p-GaN system. As a result, the highly tangled NiO-Au structure shall be the key to achieve the ohmic behavior for NiO/cont-Au/p-GaN system.

Effect of the Pulse Laser Radiation on the Stabilization of the ZrO2 and HFO2 High-Temperature Phases

2015 ◽  
Vol 245 ◽  
pp. 200-203 ◽  
Author(s):  
Maxim Alexandrovich Pugachevskii ◽  
Viktor Igorevich Panfilov
Keyword(s):  
High Temperature ◽  
Transmission Electron Microscopy Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Good Thermal Stability ◽  
Quantitative Content ◽  
Electron Microscopy Data ◽  
Cubic Phases ◽  
Transmission Electron ◽  
Microscopy Data

The conditions of formation of the ZrO2 and HfO2 high-temperature (tetragonal and cubic) phases in the ablated nanoparticles were investigated. X-ray diffraction and transmission electron microscopy data demonstrate that laser intensities above 109 W/m2 ensure the formation of the ZrO2 high-temperature phases, while intensities above 5·109 W/m2 do the formation of the HfO2 high-temperature phases. Quantitative content of the high-temperature phases in layers of the ablated nanoparticles increases with raising the intensity. The obtained nanoparticles exhibit good thermal stability.

Characterization of the Phase Transformations in the Shape Memory Alloy Ni-36 at.% Al

1991 ◽  
Vol 246 ◽  
Author(s):  
J.A. Horton ◽  
E.P. George ◽  
C.J. Sparks ◽  
M.Y. Kao ◽  
O.B. Cavin ◽  
...  
Keyword(s):  
High Temperature ◽  
Shape Memory ◽  
Phase Transformations ◽  
Hot Extrusion ◽  
Exothermic Peak ◽  
Nickel Aluminum ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron

AbstractA survey by differential scanning calorimetry (DSC) and recovery during heating of indentations on a series of nickel-aluminum alloys showed that the Ni-36 at.% Al composition has the best potential for a recoverable shape memory effect at temperatures above 100°C. The phase transformations were studied by high temperature transmission electron microscopy (TEM) and by high temperature x-ray diffraction (HTXRD). Quenching from 1200°C resulted in a single phase, fully martensitic structure. The initial quenched-in martensites were found by both TEM and X-ray diffraction to consist of primarily a body centered tetragonal (bct) phase with some body centered orthorhombic (bco) phase present. On the first heating cycle, DSC showed an endothermic peak at 121°C and an exothermic peak at 289°C, and upon cooling a martensite exothermic peak at 115° C. Upon subsequent cycles the 289°C peak disappeared. High temperature X-ray diffraction, with a heating rate of 2°C/min, showed the expected transformation of bct phase to B2 between 100 and 200°C, however the bco phase remained intact. At 400 to 450°C the B2 phase transformed to Ni2Al and Ni5Al3. During TEM heating experiments a dislocation-free martensite transformed reversibly to B2 at temperatures less than 150°C. At higher temperatures (nearly 600°C) 1/3, 1/3, 1/3 reflections from an ω-like phase formed. Upon cooling, the 1/3, 1/3, 1/3 reflections disappeared and a more complicated martensite resulted. Boron additions suppressed intergranular fracture and, as expected, resulted in no ductility improvements. Boron additions and/or hot extrusion encouraged the formation of a superordered bct structure with 1/2, 1/2, 0 reflections.

Gelatin as an ecofriendly natural polymer for preparing colloidal silver@gold nanobranches

2016 ◽  
Vol 5 (5) ◽  
Author(s):  
Phuong Phong Nguyen Thi ◽  
Dai Hai Nguyen
Keyword(s):  
Ph Value ◽  
Component Ratio ◽  
X Ray Diffraction ◽  
Ag Nps ◽  
Au Nps ◽  
X Ray ◽  
Transmission Electron ◽  
Uv Visible ◽  
The Stability ◽  
Maximum Absorption Wavelength

AbstractWe report star-shaped silver@gold (Ag@Au) nanoparticles (NPs) in gelatin suspensions for the purpose of enhancing the stability of Ag@Au NPs. In this case, Ag NPs were designed as nucleating agents, whereas gelatin was used as a protecting agent for Au development. Especially, variable gelatin concentrations were also prepared to explore its ability to increase the stability of Ag@Au NPs. The obtained samples were then characterized by UV-visible spectroscopy, transmission electron spectroscopy (TEM), X-ray diffraction, and Fourier transform infrared spectroscopy. The maximum absorption wavelength of all samples (566–580 nm) indicated that branched Ag@Au@gelatin NPs were successfully synthesized. In addition, our TEM results revealed that the size of branched Ag@Au@gelatin NPs was found to be between 20 and 45 nm as influenced by the component ratio and the pH value. These results can provide valuable insights into the improvement of Ag@Au NP stability in the presence of gelatin.

Characterization, Optical and Impedance Study of ZnSe Nanostructure

2013 ◽  
Vol 699 ◽  
pp. 490-495
Author(s):  
Ramna Tripathi ◽  
Akhilesh Kumar
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Impedance Spectroscopy ◽  
Zinc Selenide ◽  
Relaxation Times ◽  
Complex Impedance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
The Stability

Zinc selenide nanoparticle has been synthesized using soft chemical routes. The particles were capped using 2-mercaptoethanol to achieve the stability and avoid the coalescence. The as-obtained particles were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), UV–VIS absorption and photoluminescence (PL) spectra. The impedance studies were carried out as a function of frequency (100 Hz–1 MHz) and temperature (298–373 K) by impedance spectroscopy. An analysis of the complex impedance (z' and z") with frequency is performed assuming a distribution of relaxation times.

A structural analysis of the Pd/GaN ohmic contact annealing behavior

2002 ◽  
Vol 743 ◽  
Author(s):  
C. C. Kim ◽  
P. Ruterana ◽  
J. H. Je
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Electron Beam Evaporation ◽  
Intermetallic Phases ◽  
X Ray Diffraction ◽  
Annealing Behavior ◽  
X Ray ◽  
Transmission Electron ◽  
The Relationship

AbstractFor ohmic contact on p GaN, palladium is one of the best candidates showing ohmic characteristics already without annealing. To be realized in devices, it is necessary to know the behavior of the ohmic contacts at accelerated conditions, especially for high temperatures and power. We report on the structural evolution of palladium layers (30 nm) deposited on GaN (0001) by electron beam evaporation without intentional annealing. They were next cut into various pieces which were individually submitted to rapid thermal annealing at 400, 500, 600, 700 and 800°C for 10 sec. We investigate the differences in the microstructure and the location of interfacial phases and their relationships as determined by X-ray diffraction and transmission electron microscopy, we then suggest the formation mechanism based on the relationship. It is shown that the interface is disrupted at annealing above 600°C and by 800°C only very small patches of Pd are still present, however they area completely imbedded in a matrix of intermetallic phases (gallides) formed by the reaction with GaN.

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