Thermal Fracture Stress Evaluation of Silicon Nitride by a Laser up-Shock Method

2008 ◽  
pp. 173-178
Author(s):  
Mitsue Ogawa ◽  
Yasuo Nagano ◽  
Mineo Mizuno
Keyword(s):  
Silicon Nitride ◽  
Fracture Stress ◽  
Thermal Fracture ◽  
Stress Evaluation

Stress evaluation induced by wiggling silicon nitride fine pattern using Raman spectroscopy

2020 ◽  
Vol 59 (SI) ◽  
pp. SIIF03
Author(s):  
Masato Koharada ◽  
Ryo Yokogawa ◽  
Naomi Sawamoto ◽  
Kazutoshi Yoshioka ◽  
Atsushi Ogura
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Nitride ◽  
Stress Evaluation ◽  
Fine Pattern

Dependence of fracture stress on applied stress rate in a Yb2O3–SiO2-doped hot-pressed silicon nitride ceramic

2001 ◽  
Vol 16 (11) ◽  
pp. 3254-3261 ◽  
Author(s):  
Shuqi Guo ◽  
Naoto Hirosaki ◽  
Yoshinobu Yamamoto ◽  
Toshiyuki Nishimura ◽  
Mamoru Mitomo
Keyword(s):  
High Temperature ◽  
Silicon Nitride ◽  
Crack Growth ◽  
Applied Stress ◽  
Fracture Stress ◽  
Fracture Behavior ◽  
Slow Crack Growth ◽  
Silicon Nitride Ceramic ◽  
Temperature Fracture ◽  
Stressing Rate

High-temperature fracture behavior of a Yb2O3–SiO2–doped hot-pressed silicon nitride (Si3N4) ceramic was investigated in four-point flexure between 1000 and 1500 °C at five crosshead speeds, using the specimens precracked with three indentation loads. Above 1000 °C, a temperature and stressing rate dependence of fracture stress was seen. At 1200 °C the fracture stress of the precracked specimens increased with decreasing stressing rates due to a toughening effect, the absence of slow crack growth (SCG). However, at 1400 and 1500 °C the fracture stress decreased with decreasing stressing rate. In particular, this dependence was stronger at 1500 °C than at 1400 °C. The SCG was observed only in the specimens precracked with indentation loads of 98 and 196 N. This crack extended with increasing test temperature and/or decreasing stressing rate. The dependence of fracture stress on stressing rate was attributed to a SCG behavior at higher temperatures.

Residual Stress in Si3N4-Passivated GaAs Wafers

1995 ◽  
Vol 39 ◽  
pp. 237-241
Author(s):  
Allan Ward ◽  
R. W. Hendricks
Keyword(s):  
Residual Stress ◽  
Gallium Arsenide ◽  
Silicon Nitride ◽  
Single Crystal ◽  
Single Crystals ◽  
Fracture Stress ◽  
Passivation Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Device Processing

The nature of residual stress was determined in single crystal gallium arsenide (GaAs) bare wafers, silicon nitride-passivated GaAs wafers, and fully processed die. A methodology to determine strain in single crystals using X-ray diffraction was developed and applied to the specific case of gallium arsenide. The data show an increase in residual stress associated with the application of the Si3N4 passivation layer to approximately 60% of the fracture stress of the material. Further device processing only slightly increased residual stress values.

scholarly journals Bonding and Thermal Fracture of Silicon Nitride / Stainless Steal (SUS316)

2008 ◽  
Vol 33 (4) ◽  
pp. 953-956
Author(s):  
Hajime KIYONO ◽  
Takayuki NUKUI ◽  
Takaya AKASHI ◽  
Shiro SHIMADA
Keyword(s):  
Silicon Nitride ◽  
Thermal Fracture

Lattice Imaging of Grain Boundaries in Ceramics

1977 ◽  
Vol 35 ◽  
pp. 114-115
Author(s):  
D. R. Clarke ◽  
G. Thomas
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Silicon Nitride ◽  
Grain Boundaries ◽  
High Temperature Strength ◽  
Current Interest ◽  
Lattice Imaging ◽  
Special Significance ◽  
Structural Applications ◽  
Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

TEM Studies of Grain Boundary Films in Si3N4 Ceramics

1991 ◽  
Vol 49 ◽  
pp. 930-931
Author(s):  
H.-J. Kleebe ◽  
J.S. Vetrano ◽  
J. Bruley ◽  
M. Rühle
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Silicon Nitride ◽  
Hot Isostatic Pressing ◽  
Amorphous Film ◽  
Liquid Phase Sintering ◽  
Second Phase ◽  
High Temperature Mechanical Properties ◽  
Triple Points ◽  
Boundary Films

It is expected that silicon nitride based ceramics will be used as high-temperature structural components. Though much progress has been made in both processing techniques and microstructural control, the mechanical properties required have not yet been achieved. It is thought that the high-temperature mechanical properties of Si3N4 are limited largely by the secondary glassy phases present at triple points. These are due to various oxide additives used to promote liquid-phase sintering. Therefore, many attempts have been performed to crystallize these second phase glassy pockets in order to improve high temperature properties. In addition to the glassy or crystallized second phases at triple points a thin amorphous film exists at two-grain junctions. This thin film is found even in silicon nitride formed by hot isostatic pressing (HIPing) without additives. It has been proposed by Clarke that an amorphous film can exist at two-grain junctions with an equilibrium thickness.

Electron Microscopy of Silicon Nitride-Based Ceramics

1991 ◽  
Vol 49 ◽  
pp. 926-927
Author(s):  
Gareth Thomas
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Silicon Nitride ◽  
World Wide ◽  
Sintering Temperature ◽  
Liquid Phase Sintering ◽  
High Temperature Strength ◽  
Sintering Additives ◽  
Glass Forming ◽  
Dense Product

Silicon nitride and silicon nitride based-ceramics are now well known for their potential as hightemperature structural materials, e.g. in engines. However, as is the case for many ceramics, in order to produce a dense product, sintering additives are utilized which allow liquid-phase sintering to occur; but upon cooling from the sintering temperature residual intergranular phases are formed which can be deleterious to high-temperature strength and oxidation resistance, especially if these phases are nonviscous glasses. Many oxide sintering additives have been utilized in processing attempts world-wide to produce dense creep resistant components using Si3N4 but the problem of controlling intergranular phases requires an understanding of the glass forming and subsequent glass-crystalline transformations that can occur at the grain boundaries.

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