scholarly journals Advanced textured monocrystalline silicon substrates with high optical scattering yields and low electrical recombination losses for supporting crack‐free nano‐ to poly‐crystalline film growth

2021 ◽  
Author(s):  
Thierry Vrijer ◽  
Arno H. M. Smets
Keyword(s):  
Film Growth ◽  
Monocrystalline Silicon ◽  
Optical Scattering ◽  
Silicon Substrates ◽  
Crystalline Film

Plasma anodization as a dry low temperature technique for oxide film growth on silicon substrates

1982 ◽  
Vol 92 (1-2) ◽  
pp. 19-32 ◽  
Author(s):  
Takuo Sugano
Keyword(s):  
Low Temperature ◽  
Oxide Film ◽  
Film Growth ◽  
Silicon Substrates

Compact deposition system for device-based ultrathin crystalline film growth

2009 ◽  
Vol 27 (4) ◽  
pp. 1024-1028
Author(s):  
R. E. Lake ◽  
J. R. Puls ◽  
M. P. Ray ◽  
C. E. Sosolik
Keyword(s):  
Film Growth ◽  
Crystalline Film

Initial stages of the epitaxial silicon carbide film growth on silicon substrates

1989 ◽  
Vol 116 (2) ◽  
pp. K169-K172
Author(s):  
L. I. Berezhinskii ◽  
S. I. Vlaskina ◽  
V. E. Rodionov ◽  
H. A. Shamuratov
Keyword(s):  
Silicon Carbide ◽  
Film Growth ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Silicon Carbide Film

Determination of refractive index and thickness of YbF3 thin films deposited at different bias voltages of APS ion source from spectrophotometric methods

2018 ◽  
Vol 7 (1-2) ◽  
pp. 33-37 ◽  
Author(s):  
Yinhua Zhang ◽  
Shengming Xiong ◽  
Wei Huang ◽  
Kepeng Zhang
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Bias Voltage ◽  
Dispersion Model ◽  
Ion Beam ◽  
Plasma Source ◽  
Ion Source ◽  
Monocrystalline Silicon ◽  
Silicon Substrates ◽  
Spectrophotometric Methods

AbstractYtterbium fluoride (YbF3) single thin films were prepared on sapphire and monocrystalline silicon substrates through conventional thermal evaporation and ion beam-assisted deposition (IAD), at bias voltages ranging from 50 to 160 V of the Leybold advanced plasma source (APS). By using the Cauchy dispersion model, the refractive index and thickness of the YbF3thin films were obtained by fitting the 400–2500 nm transmittance of the monolayer YbF3thin films on the sapphire substrate. At the same time, the refractive index and thickness of the YbF3thin films on the monocrystalline silicon substrates were also measured using the VASE ellipsometer at wavelength from 400 to 2200 nm. The results showed that the refractive index deviation of the YbF3thin films between the fitted values by the transmittance spectra and the measured values by the VASE ellipsometer was <0.02 and the relative deviation of the thickness was <1%. Furthermore, the refractive index of the YbF3thin films increased with increasing APS bias voltage. The conventional YbF3thin films and the IAD thin films deposited at low bias voltage revealed a negative inhomogeneity, and a higher bias voltage is beneficial for improving the homogeneity of YbF3thin films.

Microcrystalline β-SiC Growth on Si by ECR-CVD at 500°C

1994 ◽  
Vol 358 ◽  
Author(s):  
Kuan-Lun Cheng ◽  
Chih-Chien Liu ◽  
Huang-Chung Cheng ◽  
Chiapyng Lee ◽  
Tri-Rung Yew
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Flow Ratio ◽  
Contact Mode ◽  
Force Microscopy ◽  
The Fourier Transform ◽  
Optimum Flow

ABSTRACTMicrocrystalline β-SiC films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at 500°C utilizing a SiH4-CH4-H2 gas mixture. The effects of two important parameters on film growth, SiH4/CH4 flow ratio and microwave (MW) power, were investigated using X-ray photoelectron spectroscopy (XPS) along with the Fourier transform infrared spectra (FTIR). Results showed that the optimum flow ratio is about 0.5. Under the optimum flow ratio, a large MW power is favorable for the growth of high quality films with an ideal film stoichiometry. Surface morphology inspected by the contact mode atomic force microscopy (AFM) reveals that high MW powers not only improve the film crystallinity but also increase its surface roughness as well.

Nucleation and Growth of Cvd Polycrystalline Si3N4 Films at Low Temperatures

1992 ◽  
Vol 287 ◽  
Author(s):  
Frederick S. Lauten ◽  
Janet Rankin ◽  
Brian W. Sheldon
Keyword(s):  
Film Growth ◽  
Single Crystal Silicon ◽  
High Growth ◽  
Analytical Techniques ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Narrow Region ◽  
Silicon Nitride Films ◽  
Partial Pressures ◽  
Ft Ir

ABSTRACTSilicon nitride films were deposited from silane and ammonia onto single crystal silicon substrates at a total pressure of 4.7 kPa. At temperatures below 1200° C, continuous films of polycrystalline Si3N4 deposited within a narrow region of low SiH4 partial pressures but at relatively high growth rates, for example, > 10 μm/hr at 1170° C. The early stages of crystalline film growth were studied with a combination of analytical techniques: FT-IR spectroscopy, x-ray and electron diffraction and electron microscopy. During deposition faceted Si3N4 grains nucleate on a growing nanocrystalline/amorphous interlayer.

scholarly journals Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases

2020 ◽  
Vol 76 (3) ◽  
pp. 469-482 ◽  
Author(s):  
Maxim A. Visotin ◽  
I. A. Tarasov ◽  
A. S. Fedorov ◽  
S. N. Varnakov ◽  
S. G. Ovchinnikov
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Harmonic Approximation ◽  
Decisive Role ◽  
Silicon Substrates ◽  
Orientation Relationships ◽  
Epitaxial Thin Film ◽  
Oriented Growth ◽  
Atomic Structures ◽  
Thermal Expansion Coefficients

A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.

Microstructure of chromium films grown on glass and silicon substrates

1989 ◽  
Vol 47 ◽  
pp. 474-475
Author(s):  
J.Z. Duan
Keyword(s):  
Film Growth ◽  
Metal Films ◽  
Internal Stresses ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Glass Substrates ◽  
The Past ◽  
Experimental Parameters ◽  
Chromium Films ◽  
Cr Film

Thin metal films are widely used in microelectronics and this has stimulated a great deal of research about their microstructures and related properties. During the past two years, chromium microstructures and internal stresses generated during e-beam evaporation Cr film growth have been researched by us. Many relationships between Cr columnar microstructures and internal stresses have been discovered. In this paper, the results of studies of the dependance of Cr columnar microstructures on Si and glass substrates are reported. They have been found to be very useful for analyzing the internal stresses in Cr films and understanding the atomistic mechanism of their growth.It is well known that microstructures and properties are closely related to the processing conditions, so in our experiments, all experimental parameters are kept constant except for factor whose influence on on microstructure and internal stress is under study.

scholarly journals Magnetic characterization of (001) and (111) Ni films epitaxially grown on MgO

2001 ◽  
Vol 674 ◽  
Author(s):  
R. A. Lukaszew ◽  
V. Stoica ◽  
R. Clarke
Keyword(s):  
Film Growth ◽  
Chemical Interaction ◽  
Hysteresis Loops ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Silicon Substrates

ABSTRACTOne interesting application of epitaxial magnetic thin films is to use them as one of the electrodes in a spin-dependent tunneling junction, in order to use the magnetocrystalline anisotropy to define the required two states of the magnetization. [1] In our preliminary work, we prepared epitaxial magnetic films on copper buffer layers grown on silicon substrates. [2] The single crystalline quality of the films was particularly evident in the magnetization hysteresis loops, showing a sharp reversal at fairly high fields (120 Oe), when the samples were magnetized along the crystallographic easy axis. One technological disadvantage in this type of samples is the chemical interaction between the metallic layers and the silicon substrate.In order to explore the possibility of epitaxial magnetic films on less reactive substrates, we studied the growth on MgO substrates. We have shown that it is possible to obtain epitaxial (001) and (111) Ni films grown on MgO substrates. [3] In particular we observed that the crystalline quality of the films improved considerably after 10 nm of film growth. We will now present our studies on the magnetic properties of these films, particularly the azimuthal dependence of the magnetization reversal using MOKRE, correlating our finding with the structural characterization obtained with RHEED, STM and XRD.

scholarly journals Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

2013 ◽  
Vol 4 ◽  
pp. 732-742 ◽  
Author(s):  
Jörg Haeberle ◽  
Karsten Henkel ◽  
Hassan Gargouri ◽  
Franziska Naumann ◽  
Bernd Gruska ◽  
...  
Keyword(s):  
Growth Rate ◽  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Atomic Layer ◽  
Silicon Substrates ◽  
Initial State ◽  
Elemental Ratios ◽  
Layer Deposition

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

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