A novel method for the direct determination of the activation enthalpy in tracer diffusion studies with applications to “low”-temperature self-diffusion in silver

1978 ◽  
Vol 50 (2) ◽  
pp. 543-549 ◽  
Author(s):  
K. Maier ◽  
H. Mehrer ◽  
J. Bihr
1989 ◽  
Vol 39 (8) ◽  
pp. 5025-5034 ◽  
Author(s):  
G. Vogl ◽  
W. Petry ◽  
Th. Flottmann ◽  
A. Heiming

2016 ◽  
Vol 7 ◽  
pp. 767-775 ◽  
Author(s):  
Ayelet Ofarim ◽  
Bastian Kopp ◽  
Thomas Möller ◽  
León Martin ◽  
Johannes Boneberg ◽  
...  

We report the development of a novel method to determine the thermopower of atomic-sized gold contacts at low temperature. For these measurements a mechanically controllable break junction (MCBJ) system is used and a laser source generates a temperature difference of a few kelvins across the junction to create a thermo-voltage. Since the temperature difference enters directly into the Seebeck coefficient S = −ΔV/ΔT, the determination of the temperature plays an important role. We present a method for the determination of the temperature difference using a combination of a finite element simulation, which reveals the temperature distribution of the sample, and the measurement of the resistance change due to laser heating of sensor leads on both sides next to the junction. Our results for the measured thermopower are in agreement with recent reports in the literature.


2015 ◽  
Vol 7 (18) ◽  
pp. 7707-7714 ◽  
Author(s):  
Marcelo B. Lima ◽  
Stéfani Iury E. Andrade ◽  
Inakã S. Barreto ◽  
Mário César U. Araújo

In this work, a novel method for direct determination of total iron in viscous samples is presented.


1998 ◽  
Vol 527 ◽  
Author(s):  
H. Bracht ◽  
E. E. Haller ◽  
K. Eberl ◽  
M. Cardona ◽  
R. Clark-Phelps

ABSTRACTWe report self-diffusion studies of silicon between 855 and 1388°C in highly enriched epitaxial 28Si layers. Diffusion profiles of 30Si and 29Si are determined with high resolution secondary ion mass spectrometry (SIMS). The temperature dependence of the Si self-diffusion coefficients is accurately described with an activation enthalpy of 4.76 eV and a pre-exponential factor of 560 cm2s-1. The single activation enthalpy indicates that Si self-interstitials dominate self-diffusion over the whole temperature range investigated. Self- and interdiffusion in buried Al71GaAs/Al69GaAs/71GaAs isotope heterostructures with different Al composition is measured between 800 and 1160°C. Ga self-diffusion in AlGaAs and interdiffusion of Al and Ga at the AlGaAs/GaAs interface show that Ga diffusion decreases with increasing Al composition and that the interdiffusion coefficient depends linearly on Al concentration. Furthermore Al is found to diffuse more rapidly into GaAs than Ga diffuses in GaAs. The temperature dependence of Ga and Al diffusion in GaAs and of Ga diffusion in AlGaAs is described by a single activation enthalpy in the range of 3.6±0.1 eV, but by different pre-exponential factors. Differences found for Ga and Al diffusion in GaAs and for Ga diffusion in AlGaAs with different Al concentrations are discussed.


1994 ◽  
Vol 337 ◽  
Author(s):  
D. Gupta

ABSTRACTAvailability of diffusion data is important in the evaluation of the prospect of substituting Cu for Al-Cu metallization for improving electrical and electromigration performance. Measurements have been made of 67Cu radioactive tracer diffusion in Cu, Cu-0.4Zr and several Al-Cu thin films of commonly used compositions. Grain boundary self diffusion in Cu is described by δDb= 1.5xl0-9 exp( — 0.92eV/kT) cm3/ sec. The activation energy for Cu diffusion in Al, Al-l%Cu and Al-0.5Cu-0.15Ti thin films depends on the amount of Cu present and varies in the 0.4 - 1.0 eV range. The measured diffusion parameters in the two alloy systems are compared and contrasted with those available from electromigration studies.


2000 ◽  
Vol 366 (1-2) ◽  
pp. 216-224 ◽  
Author(s):  
G Lérondel ◽  
F Madéore ◽  
R Romestain ◽  
F Muller

1981 ◽  
Author(s):  
T J Kunicki ◽  
S M Kristopeit ◽  
R H Aster

The diagnosis and management of immune thrombocytopenia requires an effective method for the quantitation of platelet- associated IgG (PAIgG). Although several methods have been recently devised for this purpose, the search continues for a method which will prove to be accurate and reproducible, and yet simple enough to be utilized by the general clinical hemostasis laboratory. We now describe the development of an assay for PAIgG which we believe satisfies these criteria.Human platelets were isolated by differential centrifugation, washed five times in Tris-HCl pH 7.4 or phosphate buffered saline pH 7.4, both containing 5mM EDTA, and disrupted in 0.1M sodium acetate buffer pH 5.0 containing 1% (v/v) Triton X-100. Rabbit antibody specific for γ chains of human IgG (purified IgG fraction from DAKO) was carbamylated such that its isoelectric point was decreased to roughly 5.0. Total PAIgG was measured by electrophoresis at pH 5.0 of Triton X-100 disrupted washed platelets against the carbamylated rabbit anti-human IgG (γ) in 1% agarose gels containing 0.5% Triton X-100.The mean total PAIgG for 8 normals, was 5.7 fg/platelet (range 4.9 to 7.0). This technique is applicable to the quantitation of alloantibodies bound to normal platelets (indirect assay) as well as the quantitation of PAIgG on platelets of individuals with immune thrombocytopenic states, such as ITP.


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