69‐3: Distinguished Paper: Large‐Area Spatial Atomic Layer Deposition of Amorphous Oxide Semiconductors at Atmospheric Pressure

2019 ◽  
Vol 50 (1) ◽  
pp. 981-984
Author(s):  
Ilias Katsouras ◽  
Corné Frijters ◽  
Paul Poodt, ◽  
Gerwin Gelinck ◽  
Auke Jisk Kronemeijer
Keyword(s):  
Atomic Layer Deposition ◽  
Atmospheric Pressure ◽  
Atomic Layer ◽  
Large Area ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Layer Deposition

Large‐area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure

2019 ◽  
Vol 27 (5) ◽  
pp. 304-312 ◽  
Author(s):  
Ilias Katsouras ◽  
Corné Frijters ◽  
Paul Poodt ◽  
Gerwin Gelinck ◽  
Auke Jisk Kronemeijer
Keyword(s):  
Atomic Layer Deposition ◽  
Atmospheric Pressure ◽  
Atomic Layer ◽  
Large Area ◽  
Oxide Semiconductors ◽  
Amorphous Oxide ◽  
Layer Deposition

Atomic Layer Deposition of Ultra-Thin Oxide Semiconductors: Challenges and Opportunities

2017 ◽  
Vol 735 ◽  
pp. 215-218
Author(s):  
Serge Zhuiykov ◽  
Zhen Yin Hai ◽  
Eugene Kats ◽  
Mohammad Karbalaei Akbari ◽  
Chen Yang Xue
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Enabling Technology ◽  
Large Area ◽  
Oxide Semiconductors ◽  
Si Substrates ◽  
2D Semiconductors ◽  
Layer Deposition ◽  
Challenges And Opportunities ◽  
Free Films

Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise ultra-thin two-dimensional (2D) nanostructures. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even across large and complex areas. The technique’s capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO3) over the large area of standard 4” Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.

Atmospheric Pressure Process for Coating Particles Using Atomic Layer Deposition

2009 ◽  
Vol 15 (7-9) ◽  
pp. 227-233 ◽  
Author(s):  
Renske Beetstra ◽  
Ugo Lafont ◽  
John Nijenhuis ◽  
Erik M. Kelder ◽  
J. Ruud van Ommen
Keyword(s):  
Atomic Layer Deposition ◽  
Atmospheric Pressure ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals TiO 2 thin film patterns prepared by chemical vapor deposition and atomic layer deposition using an atmospheric pressure microplasma printer

2019 ◽  
Vol 16 (12) ◽  
pp. 1900127 ◽  
Author(s):  
Morteza Aghaee ◽  
Joerie Verheyen ◽  
Alquin A. E. Stevens ◽  
Wilhelmus M. M. Kessels ◽  
Mariadriana Creatore
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Layer Deposition

A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films

2020 ◽  
Vol 56 (89) ◽  
pp. 13752-13755
Author(s):  
Nils Boysen ◽  
Bujamin Misimi ◽  
Arbresha Muriqi ◽  
Jan-Lucas Wree ◽  
Tim Hasselmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atmospheric Pressure ◽  
Atomic Layer ◽  
First Report ◽  
Layer Deposition

This is the first report on a plasma enhanced spatial atomic layer deposition (APP-ALD) process at atmospheric pressure to grow conducting metallic Cu thin films from a carbene stabilized precursor.

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