Oxidation of Fe-18%Mn-0.6%C Steels in Air and a N2-CO2-O2 Mixed Gas Atmosphere at 1273-1473 K

2012 ◽  
Vol 83 (4) ◽  
pp. 398-403 ◽  
Author(s):  
Dong Bok Lee ◽  
Il-Ryong Sohn
Keyword(s):  
Mixed Gas ◽  
Gas Atmosphere

High-performance and robust operation of anode-supported solid oxide fuel cells in mixed-gas atmosphere

2015 ◽  
Vol 40 (6) ◽  
pp. 726-732 ◽  
Author(s):  
Hyoungchul Kim ◽  
Jongsup Hong ◽  
Kyung Joong Yoon ◽  
Ji-Won Son ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Fuel Cells ◽  
Solid Oxide Fuel Cells ◽  
High Performance ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Mixed Gas ◽  
Gas Atmosphere

(100) Oriented Platinum thin Films Deposited by Dc Magnetron Sputtering On SiO 2/Si Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
Dong-Yeon Park ◽  
Dong-Su Lee ◽  
Min Hong Kim ◽  
Tae-Soon Park ◽  
Hyun-Jung Woo ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Adhesion Test ◽  
Dc Magnetron Sputtering ◽  
Mixed Gas ◽  
Si Substrates ◽  
Gas Atmosphere ◽  
Sputter Deposited ◽  
Pt Films ◽  
Deposition Conditions

AbstractPlatinum(Pt) films were sputter-deposited on Si02/Si substrates under the mixed gas atmosphere of Ar and O2. Under certain deposition conditions, the films were oriented such that the (100) direction is normal to the substrate surface. The formation of the (100) texture was affected by the gas pressure and film thickness. After annealing at 650 °C for 1 hour, (100) oriented Pt films with the resistivity of pure Pt were obtained. The annealed Pt films all passed a tape adhesion test and had no defects such as hillocks or pinholes. The experimental results from this work are presented.

Excimer Laser Induced Modification of Teflon Surface into Silicon Carbide-Like

1991 ◽  
Vol 236 ◽  
Author(s):  
M. Okoshi ◽  
K. Toyoda ◽  
M. Murahara
Keyword(s):  
Silicon Carbide ◽  
Excimer Laser ◽  
Photochemical Reaction ◽  
Surface Region ◽  
Mixed Gas ◽  
Near Surface ◽  
Modification Process ◽  
Gas Atmosphere ◽  
Ft Ir ◽  
Arf Excimer Laser

AbstractA silicon carbide-like layer was produced in the near-surface region of teflon by irradiating with an ArF excimer laser in a SiH4 and B(CH3)3 mixed gas atmosphere. The pure photochemical reaction was employed in the modification process, and the defluorination of the surface was performed with boron atoms which were photodissociated from B(CH3)3. The CH3 radicals, also photodissociated, induced the dehydrogenation of SiH4 gas; which followed the production of SiHx radicals. The SiHx radicals and CH3 radicals which could not have induced the dehydrogenation of SiH4 were substituted for fluorine atoms of the surface. As a result, the surface was photomodified into silicon carbide. Chemical composition of the photomodified surface was inspected by the XPS and the ATR-FT-IR spectra measurement, and the bonding of the Si-CH3 radicals which traded off the reduction of the fluorine atoms was comfirmed. The Si/C composition ratio of the photomodified surface was 0.7.

Synthesis of AlN Particles by Microwave-Assisted Urea Route

2016 ◽  
Vol 851 ◽  
pp. 191-195
Author(s):  
Jong Bin Ahn ◽  
Dong Soo Kim ◽  
Young Kook Kim ◽  
Jung Goo Lee
Keyword(s):  
Heat Treatment ◽  
Aluminum Chloride ◽  
Polymerization Reaction ◽  
Molar Ratio ◽  
Mixed Solution ◽  
Organic Complex ◽  
Mixed Gas ◽  
Microwave Assisted ◽  
Gas Atmosphere ◽  
Mw Irradiation

Novel simple route to prepare AlN nanoparticles was proposed in this study. Aluminum nitride powder was synthesized by microwave-assisted urea route. Aluminum chloride was dissolved in ethanol and urea was added to this solution considering molar concentration with Aluminum chloride. The solution was heated under microwave (MW) irradiation from 60°C to 80°C for 5-10 minutes. And then heat treatment was performed in N2 atmosphere with various temperatures and time to obtain AlN particles. While microwave was irradiated to the mixed solution with Aluminum chloride, urea and ethanol, the solvent was eliminated and polymerization reaction was accelerated to formmetal-organic complex. AlN particles were successfully synthesized after heat treatment above 1600°C under N2 or N2-H2 mixed gas atmosphere in the molar ratio (urea/Aluminum chloride) of 6.

Microstructure of Yba2Cu3O7 Thick Films by Post Annealing of the Precursor by High Rate E-Beam Deposition On SrTiO3 Substrates

1999 ◽  
Vol 5 (S2) ◽  
pp. 832-833
Author(s):  
Lijun Wu ◽  
Yimei Zhu ◽  
M. Suenaga ◽  
R.L. Sabatini
Keyword(s):  
Heat Treatment ◽  
Electrical Power ◽  
Electron Beam Evaporation ◽  
High Rate ◽  
Phase Assemblage ◽  
Mixed Gas ◽  
Gas Atmosphere ◽  
Fabrication Procedure ◽  
Different Temperatures ◽  
Similar Phase

Recently, considerable efforts have been made in developing a fabrication procedure for YBa2 Cu3O7-δ superconducting films on a metallic substrate tape for electrical power applications. The central issue is to develop a method, which can produce the tape in sufficiently long lengths at a commercially viable cost. One possible approach is the so-called BaF2 post-deposition annealing process, which involves deposition of an unreacted mixture of a BaF2 -Y-Cu-O layer on a substrate by electron beam evaporation method, followed by heat-treatment of the layer in a mixed-gas atmosphere of a low partial pressure O2, saturated H2 O, and N2 . To fabricate thick and long films, it is important to understand the effects of the heat-treatment parameters on the. structure and the properties. Here, we report our structural analysis of the films annealed at different temperatures.The films annealed at 725°C, 750°C and 800°C have a similar phase assemblage which are composed ofYBa2 Cu3O7-δ and Y2O3, CuO and Ba-Ti-Sr-O precipitates, as shown in fig. la.

Kinetics of the C-Axis Aligned YBa2Cu3O7 Thick Film By a BaF2 Process

1998 ◽  
Vol 4 (S2) ◽  
pp. 670-671
Author(s):  
Lijun Wu ◽  
Yimei Zhu ◽  
V.F. Solovyov ◽  
H. Wiesmann ◽  
M. Suenaga
Keyword(s):  
Heat Treatment ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Metallic Substrate ◽  
Crucial Importance ◽  
Mixed Gas ◽  
Composite Tape ◽  
Gas Atmosphere ◽  
Kinetics Of ◽  
Made In

Over the last few years, considerable efforts have been made in developing fabrication processes for thick superconducting YBa2Cu3O7-δ film on a metallic substrate for electric power applications. Since these applications require the composite tape to be longer than 4-500m, any methods chosen need to be compatible with such length requirement. One possible approach is the so-called BaF2 process which involves deposition of a unreacted mixture of a BaF2-Y-Cu-O layer on a substrate by an electron beam evaporation method, followed by heat-treatment of the layer in a mixed-gas atmosphere of a low partial pressure O2, saturated H2O, and N2. Although it was shown previously that c-axis aligned films up to ∼ I m long can be produced under these conditions it is uncertain how thick the films can be made and this is of crucial importance as most applications require film thickness to be greater than ∼5μm to carry a large, dissipationless current.

Gan Nanowire Growth by Thermal Evaporation Method

2012 ◽  
Vol 501 ◽  
pp. 276-280
Author(s):  
Leila Shekari ◽  
Abu Hassan Haslan ◽  
Hassan Zainuriah
Keyword(s):  
Gas Flow ◽  
Thermal Evaporation ◽  
Mixed Gas ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Transmission Electron ◽  
Gas Atmosphere ◽  
Ar Gas ◽  
Uniform Diameter ◽  
Different Diameters

In this research we introduce an inexpensive method to produce highly crystalline GaN Nanowires (NWs) grown on porous zinc oxide (PZnO) using commercial GaN powder, either in argon gas or combination of nitrogen and Ar gas atmosphere, by thermal evaporation. Morphological structural studies using transmission electron microscope (TEM) and scanning electron microscopy (SEM) measurements showed the role of porosity and different gas flowing, in the alignment and nucleation of these NWs. The NWs grown under flow of mix gases have very different diameters of between 50 and 200 nm, but those which were grown in Ar gas atmosphere, have rather uniform diameter of around 50 nm. The length of the GaN NWs was uniform, (around 10 µm). Optical and structural characterizations were performed by energy-dispersive X-ray spectroscopy (EDX) and high resolution X-ray diffraction (HR-XRD). Results revealed that these NWs are of single-crystal hexagonal GaN with [oooı] and [ıoīı] growth directions for the NWs grown under Ar and mixed gas flow.

Combinatorial Study on In-Ga-Zn-O Semiconductor Films as Active-channel Layers for Thin-film Transistor

2006 ◽  
Vol 928 ◽  
Author(s):  
Tatsuya Iwasaki ◽  
Naho Itagaki ◽  
Tohru Den ◽  
Hideya Kumomi ◽  
Kenji Nomura ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Chemical Compositions ◽  
Semiconductor Films ◽  
Mixed Gas ◽  
Current Ratio ◽  
Gas Atmosphere ◽  
Wide Compositional Range ◽  
Active Channel

ABSTRACTThe device characteristics of thin-film transistors (TFTs) having amorphous In-Ga-Zn-O channel layers with various chemical compositions were studied by using combinatorial synthesis techniques. The In-Ga-Zn-O films were prepared by a radio-frequency magnetron sputtering method at room temperature in mixed-gas atmosphere of argon and oxygen. The TFT libraries enabled us to systematically survey the device characteristics of the TFTs in a wide compositional range of channel materials. It is found that the TFT characteristics are very sensitive to the chemical composition ratio of In:Ga:Zn and depend also on the oxygen partial pressure during deposition. Some devices exhibited good performance of the field-effect mobility of ∼10 cm2V−1sec−1 and on-to-off current ratio of ∼108.

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