Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film

2020 ◽  
Vol 31 (11) ◽  
pp. 8705-8717 ◽  
Author(s):  
H. H. Gullu ◽  
D. E. Yildiz
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Frequency Effects ◽  
Electrical And Dielectric Properties ◽  
Mis Diode

Title: Inkjet-printed rectifying metal-insulator-semiconductor (MIS) diodes for flexible electronic applications

2014 ◽  
Vol 1628 ◽  
Author(s):  
Kalyan Yoti Mitra ◽  
Carme Martínez-Domingo ◽  
Enrico Sowade ◽  
Eloi Ramon ◽  
Henrique Leonel Gomes ◽  
...  
Keyword(s):  
Inkjet Printing ◽  
Printed Electronics ◽  
Schottky Diodes ◽  
Functional Materials ◽  
Industrial Applications ◽  
Plastic Substrate ◽  
Organic Thin Film ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Mis Diode

ABSTRACTInkjet printing is a well-accepted deposition technology for functional materials in the area of printed electronics. It allows the precise deposition of patterned functional layers on both, rigid and flexible substrates. Furthermore, inkjet printing is considered as up-scalable technology towards industrial applications. Many electronic devices manufactured with inkjet printing have been reported in the recent years. Some of the evident examples are capacitors, resistors, organic thin film transistors and rectifying Schottky diodes. [1, 2, 3] In this paper we report on the manufacturing of an inkjet-printed metal-insulator-semiconductor (MIS) diode on flexible plastic substrate. The structure is comprised of an insulating and a polymeric semiconducting layer sandwiched between two silver electrodes. The current vs. voltage characteristics are rectifying with rectification ratio up to 100 at |4 V|. Furthermore, they can carry high current densities (up to mA/cm2) and have a low capacitance which makes them attractive for high frequency rectifying circuits. They are also an ideal candidate to replace conventional Schottky diodes for which the fabrication remains a challenge. This is because inkjet printing of Schottky diodes require additional processing steps such as intense pulsed light sintering (IPL sintering) [4] or post-treatments at high temperatures. The deposition of two different metal layers using inkjet printing e.g. Cu or Al with Ag is possible. However, the mentioned post treatment technologies might be incompatible with the already existing layer stack– e.g. it could degrade the organic semiconductor or can damage insulator which in this case is present in the MIS diode architecture.

Electrical characteristics and photolytic tuning of poly(3-hexylthiophene) thin film metal–insulator–semiconductor field-effect transistors (MISFETs)

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1171-1177 ◽  
Author(s):  
Z. Xie ◽  
M. S. A. Abdou ◽  
X. Lu ◽  
M. J. Deen ◽  
S. Holdcroft
Keyword(s):  
Thin Film ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Current Component ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Photolytic Degradation ◽  
In Series

In this paper, we present results on the electrical characteristics of both thick and thin film polymer metal–insulator–semiconductor field-effect transistors (MISFETs) based on poly(3-hexylthiophene) semiconducting substrate. These MISFETs were fabricated in eight steps using conventional semiconductor processing technology. The MISFETs had excellent current–voltage characteristics and showed little degradation with time. Electrical parameters of threshold voltage, mobility, and transconductance were − 1 V, 10−4–10−5 cm2 V−1 s−1, and 10−9 S, respectively. These values are typical of π-conjugated polymer-based MISFETs. Electrical transport in MISFETs were by both bulk (or resistive) and FET-like mechanisms in the thick film transistors. The resistive current component and the electrical characteristics were found to be tunable by photolytic degradation of the semiconducting polymer. In this process, the semiconducting π-conjugated regions were spatially converted to insulating regions by novel photo-oxidative chemistry. We were also successful in modelling the MISFETs as an intrinsic FET with parasitic source and drain resistances in series with it and a varistor (for the bulk current component) in parallel with the intrinsic FET. Using this circuit model, we obtained very good agreements between SPICE simulations and the experimental results.

Efficient Field Effect in Heavily Doped Thin-Film Diamond Metal-Insulator-Semiconductor Diode Employing $\bf BaTiO_{3}$ Insulator Film

1994 ◽  
Vol 33 (Part 2, No. 6B) ◽  
pp. L888-L891 ◽  
Author(s):  
Takuya Ariki ◽  
Shozo Shikama ◽  
Sei Suzuki ◽  
Yuzuru Otsuka ◽  
Tetsuro Maki ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Semiconductor Diode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Insulator Film ◽  
Heavily Doped

scholarly journals Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Soonil Lee ◽  
Li Ji ◽  
Alex C. De Palma ◽  
Edward T. Yu
Keyword(s):  
Thin Film ◽  
Current Density ◽  
Water Oxidation ◽  
Metal Catalyst ◽  
Saturation Current ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Onset Potential ◽  
Solar Water Splitting ◽  
Saturation Current Density

AbstractMetal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm2 under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm2 is maintained at 1.3 V versus RHE for 7 days.

Electrical Characterization of Polyfluorene-Based Metal-Insulator-Semiconductor Diodes

2006 ◽  
Vol 937 ◽  
Author(s):  
M. Yun ◽  
M. Arif ◽  
S. Gangopadhyay ◽  
S. Guha
Keyword(s):  
Layer Structure ◽  
Electrical Characterization ◽  
Doping Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Light Emitting ◽  
Unintentional Doping ◽  
Current Voltage ◽  
Mis Diode

ABSTRACTPolyfluorenes (PFs) have emerged as a promising family of blue polymer light-emitting diodes (PLED) due to their high electroluminescence quantum yield. Metal-insulator-semiconductor (MIS) diodes are the two terminal analogues of thin film transistors sharing the same basic layer structure. We have investigated two different structures based on poly [9,9'-(di 2-ethylhexyl)fluorene] (PF2/6), a MIS diode and a hole-only PLED. The MIS diodes were fabricated with the PF2/6 layer on p+ Si /Al2O3 substrates, and were characterized by means of capacitance-voltage (C-V) measurements as a function of frequency. From C-V measurements, the unintentional doping density is evaluated as ∼5.7×1017 cm−3 at frequencies above 20 kHz. The interface trap density is estimated as ∼7.2×1011 eV−1cm−2 at 10 kHz. Current-voltage measurements of PF2/6-based PLEDs shows a shallow trap space-charge-limited conduction from which the energy of the traps and hole mobilities are estimated.

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