High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 kΩ·µm) and record high drain current (460 µA/µm)

2014 ◽  
Author(s):  
Lingming Yang ◽  
Kausik Majumdar ◽  
Yuchen Du ◽  
Han Liu ◽  
Heng Wu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Drain Current

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

scholarly journals Contact Resistance Induced Variability in Graphene Field Effect Transistors

2021 ◽  
Vol 13 (1) ◽  
pp. 153-163
Author(s):  
S. Behera ◽  
S. R. Pattanaik ◽  
G. Dash
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
High Performance ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Simulation Method ◽  
Process Variability ◽  
Graphene Field Effect Transistor ◽  
Dual Gate ◽  
Graphene Devices

The success of the graphene field-effect transistor (GFET) is primarily based on solving the problems associated with the growth and transfer of high-quality graphene, the deposition of dielectrics and contact resistance. The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. This is because process variability is inherent in semiconductor device manufacturing. Two units, even manufactured in the same batch, never show identical characteristics. Therefore, it is imperative that the effect of variability be studied with a view to obtain equivalent performance from similar devices. In this study, we undertake the variability of source and drain contact resistances and their effects on the performance of GFET. For this we have used a simulation method developed by us. The results show that the DC characteristics of GFET are highly dependent on the channel resistance. Also the ambipolar characteristics are strongly affected by the variation of source and drain resistances. We have captured their impact on the output as well as transfer characteristics of a dual gate GFET.

Self-forming electrode modification in organic field-effect transistors

2016 ◽  
Vol 4 (35) ◽  
pp. 8297-8303 ◽  
Author(s):  
Sangmoo Choi ◽  
Felipe A. Larrain ◽  
Cheng-Yin Wang ◽  
Canek Fuentes-Hernandez ◽  
Wen-Fang Chou ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Spin Coating ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Electrode Modification ◽  
Silver Electrodes

High-performance top-gate TIPS-pentacene/PTAA OFETs having low contact resistance were fabricated by mixing PFBT directly into the semiconductor solution and spin-coating the solution on bare silver electrodes.

High performance electronic devices based on nanofibers via a crosslinking welding process

Nanoscale ◽  
2018 ◽  
Vol 10 (41) ◽  
pp. 19427-19434 ◽  
Author(s):  
Youchao Cui ◽  
You Meng ◽  
Zhen Wang ◽  
Chunfeng Wang ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Epoxy Resin ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Welding Process ◽  
Device Performance ◽  
Adhesion Performance

An amine-hardened epoxy resin was selected as adhesion agent to weld nanofiber and improve the adhesion performance, resulting in low contact-resistance nanofiber networks (NFNs). The field-effect transistors based on In2O3 NFNs/SiO2 exhibit high device performance.

Improvement of Short Channel Mobility and Operational Stability of Pentacene Bottom-Contact Transistors with a Sulfuric Acid and Hydrogen Peroxide Mixture (SPM) Treatment of Au Electrodes

2006 ◽  
Vol 965 ◽  
Author(s):  
Haruo Kawakami ◽  
Takahiko Maeda ◽  
Hisato Kato
Keyword(s):  
Hydrogen Peroxide ◽  
Sulfuric Acid ◽  
Contact Resistance ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Channel Length ◽  
Short Channel ◽  
Bottom Contact

ABSTRACTWe report a reduction in the contact resistance between pentacene and Au source/drain electrodes of organic field effect transistors (OFETs) with bottom-contact structure. By immersing the Au electrodes in a sulfuric acid and hydrogen peroxide mixture (SPM), the injection barrier between the Au electrodes and pentacene was lowered by approximately 0.2 eV and the contact resistance significantly decreased. The fabricated bottom-contact OFETs revealed a field-effect mobility of more than 0.66 cm2/Vs at a channel length ranging from 3 to 30 μm, which is comparable to that of top-contact OFETs with a 50 μm channel length. The transfer characteristics of the OFET with the SPM treatment were stable even after 44days storage in air under room illumination without any passivation. Moreover, the drain current reduction due to threshold voltage (Vth) shift under continuous application of gate voltage quickly recovered toward the original value with unloading of gate voltage.

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

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