Current voltage characteristics of composite superconductors with high contact resistance

Cryogenics ◽  
1984 ◽  
Vol 24 (2) ◽  
pp. 67-72 ◽  
Author(s):  
A.A. Akhmetov ◽  
V.P. Baev
Keyword(s):  
Contact Resistance ◽  
Current Voltage ◽  
Composite Superconductors ◽  
Current Voltage Characteristics

scholarly journals MEASURING INSTALLATION FOR DETERMINING CURRENT-VOLTAGE CHARACTERISTICS OF COMPOSITE SUPERCONDUCTORS IN THE PRODUCTION OF CRYOGENIC TECHNIQUE

2020 ◽  
Vol 8 (2) ◽  
pp. 38-41
Author(s):  
Alexander F. Brodnikov
Keyword(s):  
Critical Current ◽  
Ti Alloy ◽  
Composite Wire ◽  
Rectangular Section ◽  
Measuring Installation ◽  
Cryogenic Technique ◽  
Current Voltage ◽  
Composite Superconductors ◽  
Current Voltage Characteristics

The method and measuring installation for determining the actual critical current values in superconductors, at helium temperatures, coming to the market from domestic and foreign manufacturers of composite wire, round or rectangular section, based on the Nb-Ti alloy, are considered.

scholarly journals Study and Analysis of Simple and Precise of Contact Resistance Single-Transistor Extracting Method for Accurate Analytical Modeling of OTFTs Current-Voltage Characteristics: Application to Different Organic Semiconductors

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1448
Author(s):  
Noweir Ahmad Alghamdi
Keyword(s):  
Contact Resistance ◽  
Organic Semiconductors ◽  
Practical Method ◽  
Organic Thin Film ◽  
Current Voltage ◽  
Organic Semiconductor Materials ◽  
Current Voltage Characteristics ◽  
Output Characteristics ◽  
P Type ◽  
Transition Voltage

Contact resistance (Rc) characterizes the interface of source-drain electrodes/organic semiconductors and controls the injection efficiency of carriers in organic thin-film transistors (OTFTs). This research paper presents and assesses two methods for extracting the value of the contact resistance from the measured current-voltage characteristics of OTFTs made with various p-type organic semiconductors as active layers. These two methods are the transition voltage method (TVM) and the transfer line method (TLM). The obtained Rc values by the TVM method are in fair agreement with those obtained by TLM, with a maximum percentage of difference around 10%, demonstrating the accuracy of the used transition-voltage method. An analytical model was employed to calculate output characteristics in the linear regime of OTFTs made with various organic semiconductors using the contact resistance values obtained by the transition voltage method. The calculated results are in reasonably good agreement with the experimental ones of each fabricated device, which affirms the ability of the used model to characterize the charge transport correctly in these types of devices. It can be concluded that the used TVM method is not only an easy and practical method, but also a precise way for extracting Rc in OTFTs produced using different organic semiconductor materials.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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