Results of studies of silicon−silicon-ultrathin oxide (42 A˚ )−polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 A˚ . The current, flowing through SiO2, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 A˚ SiO2 is more pronounced than in structures with an oxide of 37 A˚ . An
explanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide−polysilicon interface, and the potential on the branch from
the semiconductor side significantly decreases to the contact with the substrate.
Simulation and Comparison of Current Voltage Characteristics of Si and Ge based Bio Field Effect Transistor by Varying Oxide Thickness to Get Better Sensitivity