scholarly journals Устойчивые к полевым повреждениям структуры кремний-сверхтонкий окисел (42 нм)-поликремний

2021 ◽  
Vol 55 (1) ◽  
pp. 24
Author(s):  
Д.А. Белорусов ◽  
Е.И. Гольдман ◽  
В.Г. Нарышкина ◽  
Г.В. Чучева
Keyword(s):  
Electronic States ◽  
Oxide Thickness ◽  
The State ◽  
Charge Carriers ◽  
Potential Relief ◽  
Insulator Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ultrathin Oxide ◽  
Silicon Silicon

Results of studies of silicon−silicon-ultrathin oxide (42 A˚ )−polysilicon structures structures stabile resistant to field damage are presented. It was found that the total recharging of localized electronic states and minority charge carriers, concentrated at the substrate-insulator interface, which occurs with a change in the field voltage and is close to the same characteristic of structures with an oxide thickness of 37 A˚ . The current, flowing through SiO2, in the enrichment state of the semiconductor increases with increasing voltage much more strongly than in the state of depletion. Moreover, the asymmetry of current-voltage characteristics in relation to the polarity of the voltage, falling on the insulator in samples with a thickness of 42 A˚ SiO2 is more pronounced than in structures with an oxide of 37 A˚ . An explanation for this asymmetry is possible, if the potential relief in the insulator has a maximum, significantly shifted to the oxide−polysilicon interface, and the potential on the branch from the semiconductor side significantly decreases to the contact with the substrate.

Electronic Transport through Conical Nanosized GaAs Pillars

2015 ◽  
Vol 1735 ◽  
Author(s):  
Thorben Bartsch ◽  
Christian Heyn ◽  
Wolfgang Hansen
Keyword(s):  
Electronic Transport ◽  
Three Dimensional ◽  
Electronic States ◽  
Quantum Point Contacts ◽  
Point Contacts ◽  
Quantum Size ◽  
Current Voltage ◽  
Quantum Point ◽  
Current Voltage Characteristics ◽  
Lattice Matched

ABSTRACTWe study the electronic transport through epitaxial GaAs nanopillars that are only 16 nm long, with diameters of about 100 nm at the upper and 40 nm at the lower end. The pillars can be considered to be very short conical nanowires embedded in AlGaAs. They represent quantum point contacts between two perfectly lattice matched three-dimensional GaAs charge reservoirs. Distinctive asymmetries are found in the current-voltage characteristics. We associate them with the conical shape of the pillars. Although contact reservoirs and pillars are made from the same material, the transport through the pillars is dominated by tunneling across shallow barriers. This is explained by the quantum size effect on the electronic states within the pillars.

Study on Oxide Thickness Dependence of Current-Voltage Characteristics for HfOx Based ReRAM Device

2014 ◽  
Vol 64 (14) ◽  
pp. 93-98 ◽  
Author(s):  
Y. Hamada ◽  
S. Otsuka ◽  
T. Shimizu ◽  
S. Shingubara
Keyword(s):  
Oxide Thickness ◽  
Thickness Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Simulation and Comparison of Current Voltage Characteristics of Si and Ge based Bio Field Effect Transistor by Varying Oxide Thickness to Get Better Sensitivity

2021 ◽  
Vol 11 (2) ◽  
pp. 1066-1083
Author(s):  
S. Layasree
Keyword(s):  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Oxide Thickness ◽  
Simulation Environment ◽  
Current Voltage ◽  
Gate Oxide Thickness ◽  
Maximum Conductivity ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Silicon Based

Aim: The current voltage characteristics of Silicon based BIOFET and Germanium based BIOFET are simulated by varying their oxide thickness ranging from 1nm to 100nm. Materials and Methods: The electrical conductance of Silicon based BIOFET (n=320) was compared with Germanium based BIOFET (n=320) by varying oxide thickness ranging from 1nm to 100nm in the NanoHub© tool simulation environment. Results: Germanium based BIOFET has significantly higher conductance than Silicon based BIOFET. The optimal gate oxide thickness for maximum conductivity was 1nm for Silicon based BIOFET and 35nm for Germanium based BIOFET. Conclusion: Within the limits of the study, Germanium based BIOFET with oxide thickness of 35nm offers the best conductivity.

scholarly journals SIMULATING CHARACTERISTICS OF CARBON NANOTUBE FIELD- EFFECT TRANSISTOR (CNTFET)

2010 ◽  
Vol 13 (2) ◽  
pp. 15-27
Author(s):  
Hien Sy Dinh ◽  
Tuan Tran Anh Thi ◽  
Luong Thi Nguyen
Keyword(s):  
Field Effect Transistor ◽  
Oxide Thickness ◽  
Capacitive Coupling ◽  
Graphic User Interface ◽  
Current Voltage ◽  
Gate Oxide Thickness ◽  
Calculation Results ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Non Equilibrium Green’S Function

We provide a model of coaxial CNTFET, using single wall nanotube. These devices would exhibit wrap-around gates that maximize capacitive coupling between the gate electrode and the nanotube channel. The results of simulations of I-V characteristics for CNTFETs are presented. Here we use non-equilibrium Green’s function (NEGF) to perform simulation for CNTFET. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, display of calculation results. In this work, we review the capabilities of the simulator, summarize the theoretical approach and experimental results. Current-voltage characteristics are a function of the variables such as: diameter of CNT, the length of CNT, the gate oxide thickness, gate voltage of Vg, types of materials of Source-Drain, Gate, and temperature. The obtained I-V characteristics of the CNTFET are also presented by analytical equations.

scholarly journals Investigation of temperature dependences of current-voltage characteristics of hybrid organic materials based on zinc complexes

2021 ◽  
pp. 81-87
Author(s):  
Andrey Tyutyunik ◽  
Vladimir Gurchenko ◽  
Alim Mazinov
Keyword(s):  
Coordination Compound ◽  
Electrochemical Analysis ◽  
Zinc Complexes ◽  
Charge Carriers ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
Temperature Dependences ◽  
Homo And Lumo ◽  
Current Voltage Characteristics ◽  
Fundamental Values

In this work, we analyzed the current-voltage characteristics in the temperature range of the hybrid organic material C24H24N6O3Zn in order to determine the prospects for using this compound as a semiconductor material. The range of temperature measurements was from 270 to 330 K. An electrochemical analysis of the studied coordination compound was carried out, the energies of the HOMO and LUMO levels were calculated. The method of obtaining, microscopy, and also the method of measuring the temperature dependences of the electrical properties of the obtained thin films of these hybrid materials based on zinc complexes are described. A number of fundamental values of the films of this coordination compound have been calculated: the activation energy is  0.88 eV and the mobility of charge carriers is  1.4710-11 cm V-1 s-1.

scholarly journals Photoconductivity of Thin Films Obtained from a New Type of Polyindole

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 228
Author(s):  
Renat B. Salikhov ◽  
Akhat G. Mustafin ◽  
Ilnur N. Mullagaliev ◽  
Timur R. Salikhov ◽  
Anastasiia N. Andriianova ◽  
...  
Keyword(s):  
Thin Films ◽  
Fluorescence Spectra ◽  
Test Sample ◽  
Charge Carriers ◽  
Transport Layer ◽  
Photoluminescence Spectra ◽  
Current Voltage ◽  
Mobility Of Charge Carriers ◽  
New Type ◽  
Current Voltage Characteristics

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.

scholarly journals Особенности транспорта электронов и фотопроводимости в слое наноразмерных частиц сульфида свинца

2019 ◽  
Vol 45 (8) ◽  
pp. 3
Author(s):  
М.И. Шишкин ◽  
М.В. Гавриков ◽  
И.Т. Ягудин ◽  
А.Г. Роках
Keyword(s):  
Basic Mechanism ◽  
Charge Carriers ◽  
Optical Measurements ◽  
Free Charge ◽  
Current Voltage ◽  
Wide Range ◽  
Current Change ◽  
Current Voltage Characteristics ◽  
Lead Sulfide Nanoparticles ◽  
A Current

In the lead sulfide nanoparticles-based layers deposited from alcohol suspensions, analysis of the current-voltage characteristics made it possible to establish the basic mechanism of electron transport. Previously, using optical measurements in the range of 3500 nm, it was shown that the organic component in such layers was practically absent. When exposed to wide range radiation corresponding to the “transparency window” of the atmosphere of 8000–14000 nm, a current change in PbS nanodust was detected, where, as previously shown, absorption on free charge carriers can occur.

Effect of Systematic Changes of Ti and Hf Si-oxynitride Alloys by Nitrogen Incorporation as a Bond Constraint on Electrical and Material Properties

2007 ◽  
Vol 996 ◽  
Author(s):  
Sanghyun Lee ◽  
Gerry Lucovsky ◽  
L. B. Fleming ◽  
Jan Luning
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Ternary Alloys ◽  
Flat Band ◽  
Compositional Dependence ◽  
X Ray ◽  
State Splitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
X Ray Absorption

AbstractWe have investigated the effect of Si3N4 content in (Ti(Hf)O2)x(Si3N4)y(SiO2)1-x-y pseudo-ternary alloys by tracking systematic changes of electrical properties, including electrically active defects. Results from Soft x-ray photoelectron spectroscopy (SXPS) studies indicate no detectable hole traps for Ti/Hf Si oxynitrides with Si3N4 content >35%; these alloys have equal concentrations of Ti(Hf)O2 and SiO2, ~30-32%, and additionally are stable for annealing in Ar ambients to temperatures of 1100°C. Derivative near edge x-ray absorption spectroscopy (NEXAS) comparisons for the O K1 edges of TiO2 and optimized Ti Si oxynitride alloys provides a significantly reduced average crystal field d-state splitting from 1.9 to 1.6eV, as well as decreased electron trapping, and is correlated with a four-fold coordination of Ti in the Ti Si oxynitride alloys. The flat band voltage shift with varying frequency from 10 kHz to 1MHz in these alloys is less than 12 mV and the compositional dependence of current-voltage characteristics on Si3N4 composition results in the lowest leakage current at a Si3N4 content of ~40 % with the smallest equivalent oxide thickness (EOT) as well. Based on these studies, Transition Metal (TM) Si oxynitride alloys are anticipated to yield EOT <1 nm for scaled CMOS devises.

Current-voltage characteristics of Al/SiO2/p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness

2006 ◽  
Vol 40 (9) ◽  
pp. 1109-1115 ◽  
Author(s):  
M. I. Vexler ◽  
S. E. Tyaginov ◽  
A. F. Shulekin ◽  
I. V. Grekhov
Keyword(s):  
Oxide Thickness ◽  
Tunnel Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics
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