Surface profiling of insulating layers using desorption induced by monatomic or cluster ions of beam diameter in the 5–10 μm range

1989 ◽  
Vol 42 (1) ◽  
pp. 127-129 ◽  
Author(s):  
J.P. Thomas ◽  
A. Oladipo ◽  
M. Fallavier
Keyword(s):  
Cluster Ions ◽  
Beam Diameter ◽  
Surface Profiling

Infrared Semiconductor Laser Annealing Used for Formation of Shallow Junction

2008 ◽  
Vol 1070 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Yuta Mizutani ◽  
Naoki Sano ◽  
Masao Naito
Keyword(s):  
Semiconductor Laser ◽  
Laser Annealing ◽  
Continuous Wave ◽  
Flow Analysis ◽  
Sample Surface ◽  
Implantation Dose ◽  
Cluster Ions ◽  
Beam Diameter ◽  
Shallow Junction ◽  
Boron Cluster

ABSTRACTWe report continuous-wave (CW) infrared-semiconductor laser annealing of silicon implanted with boron atoms with assistance of diamond-like carbon (DLC) films as optical absorption layer in order to form shallow junctions. BF2 ions were implanted at 10 keV at doses of 1.5×1015 cm−2 thorough an 8-nm thick SiO2 layer. The effective boron dose implanted into silicon was 7.5c1015 cm−2 a half of the implantation dose. The initial boron distribution had a peak concentration of 6×1020 cm−3 at the silicon surface and a concentration of 1×1019 cm−3 at a depth of 27 nm. The samples were coated with 200-nm-thick DLC films. The samples were annealed by irradiation with a 940 nm continuous wave laser at 80 kW/cm2 with a beam diameter of 180 μm for 2.6 ms. Heat flow analysis estimated that the sample surface was heated to 1350°C for 1.5 ms by laser annealing. Laser annealing markedly reduced the sheet resistance to 531 Ω/sq. Boron atoms were almost completely activated with a carrier density close to the effective boron dose of 7.5×1014 cm−2. The in-depth profile of boron concentration hardly changed within 3 nm for laser annealing for 2.6 ms. The intermediate SiO2 layer effectively blocked carbon incorporation to a level below 1017 cm−3. These results show that the present laser annealing method is suitable to form shallow junction of a high dopant activation ratio. We will report low energy implantation of boron-cluster ions followed by the present infrared-semiconductor laser annealing in order to form a shallow junction with a depth less than 15 nm.

scholarly journals Laser–Material Interactions of High-Quality Ultrashort Pulsed Vector Vortex Beams

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 376 ◽  
Author(s):  
Yue Tang ◽  
Walter Perrie ◽  
David Rico Sierra ◽  
Qianliang Li ◽  
Dun Liu ◽  
...  
Keyword(s):  
Absolute Intensity ◽  
Beam Diameter ◽  
S Wave ◽  
Light Modulator ◽  
Surface Profiling ◽  
Spatial Uniformity ◽  
Ring Mode ◽  
Light Surface ◽  
Vortex Beams ◽  
Micro Structuring

Diffractive multi-beams based on 1 × 5 and 2 × 2 binary Dammann gratings applied to a spatial light modulator (SLM) combined with a nanostructured S-wave plate have been used to generate uniform multiple cylindrical vector beams with radial and azimuthal polarizations. The vector quality factor (concurrence) of the single vector vortex beam was found to be C = 0.95 ± 0.02, hence showing a high degree of vector purity. The multi-beams have been used to ablate polished metal samples (Ti-6Al-4V) with laser-induced periodic surface structures (LIPSS), which confirm the polarization states unambiguously. The measured ablation thresholds of the ring mode radial and azimuthal polarizations are close to those of a Gaussian mode when allowance is made for the expected absolute intensity distribution of a ring beam generated from a Gaussian. In addition, ring mode vortex beams with varying orbital angular momentum (OAM) exhibit the same ablation threshold on titanium alloy. Beam scanning with ring modes for surface LIPSS formation can increase micro-structuring throughput by optimizing fluence over a larger effective beam diameter. The comparison of each machined spot was analysed with a machine learning method—cosine similarity—which confirmed the degree of spatial uniformity achieved, reaching cosθ > 0.96 and 0.92 for the 1 × 5 and 2 × 2 arrays, respectively. Scanning electron microscopy (SEM), optical microscopy and white light surface profiling were used to characterize and quantify the effects of surface modification.

Application of Improved Voltage Compensation in the SEM to Imaging of Organic Materials

1973 ◽  
Vol 31 ◽  
pp. 444-445
Author(s):  
P.J. Killingworth ◽  
M. Warren
Keyword(s):  
Electron Beam ◽  
Organic Materials ◽  
Operating Parameters ◽  
Low Density ◽  
Beam Diameter ◽  
Incident Electron Beam ◽  
Specimen Material ◽  
Voltage Compensation ◽  
Selection Of ◽  
Scanning Electron

Ultimate resolution in the scanning electron microscope is determined not only by the diameter of the incident electron beam, but by interaction of that beam with the specimen material. Generally, while minimum beam diameter diminishes with increasing voltage, due to the reduced effect of aberration component and magnetic interference, the excited volume within the sample increases with electron energy. Thus, for any given material and imaging signal, there is an optimum volt age to achieve best resolution.In the case of organic materials, which are in general of low density and electric ally non-conducting; and may in addition be susceptible to radiation and heat damage, the selection of correct operating parameters is extremely critical and is achiev ed by interative adjustment.

Quantitative Measurements on the Ion Etching of TMV

1973 ◽  
Vol 31 ◽  
pp. 336-337
Author(s):  
Irwin Bendet ◽  
Nabil Rizk
Keyword(s):  
Electron Microscope ◽  
Tobacco Mosaic Virus ◽  
Mosaic Virus ◽  
Ion Current ◽  
Beam Diameter ◽  
Ion Etching ◽  
Preliminary Results ◽  
Quantitative Measurements ◽  
Monitoring Devices

Preliminary results reported last year on the ion etching of tobacco mosaic virus indicated that the diameter of the virus decreased more rapidly at 10KV than at 5KV, perhaps reaching a constant value before disappearing completely.In order to follow the effects of ion etching on TMV more quantitatively we have designed and built a second apparatus (Fig. 1), which incorporates monitoring devices for measuring ion current and vacuum as well as accelerating voltage. In addition, the beam diameter has been increased to approximately 1 cm., so that ten electron microscope grids can be exposed to the beam simultaneously.

SEM and Auger microanalysis studies of Cu-Be dynode surfaces at each activation condition

1978 ◽  
Vol 36 (1) ◽  
pp. 524-525
Author(s):  
T. Koshikawa ◽  
Y. Fujii ◽  
E. Sugata ◽  
F. Kanematsu
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Life Time ◽  
Activation Process ◽  
Beam Diameter ◽  
Activation Temperature ◽  
Electron Multiplier ◽  
Activation Condition ◽  
Activation Conditions

The Cu-Be alloys are widely used as the electron multiplier dynodes after the adequate activation process. But the structures and compositions of the elements on the activated surfaces were not studied clearly. The Cu-Be alloys are heated in the oxygen atmosphere in the usual activation techniques. The activation conditions, e.g. temperature and O2 pressure, affect strongly the secondary electron yield and life time of dynodes.In the present paper, the activated Cu-Be dynode surfaces at each condition are investigated with Scanning Auger Microanalyzer (SAM) (primary beam diameter: 3μmϕ) and SEM. The commercial Cu-Be(2%) alloys were polished with Cr2O3 powder, rinsed in the distilled water and set in the vacuum furnance.Two typical activation condition, i.e. activation temperature 730°C and 810°C in 5x10-3 Torr O2 pressure were chosen since the formation mechanism of the BeO film on the Cu-Be alloys was guessed to be very different at each temperature from the results of the secondary electron emission measurements.

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

Reduction of Specimen Contamination in Electron-Beam Instruments

1976 ◽  
Vol 34 ◽  
pp. 576-577
Author(s):  
G. Lehmpfuhl ◽  
P. J. Smith
Keyword(s):  
Electron Beam ◽  
Cold Trap ◽  
Beam Diameter ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Hydrocarbon Molecules ◽  
Electron Microscopes ◽  
Combination Of Methods ◽  
Convergent Beam ◽  
Very High

Specimens being observed with electron-beam instruments are subject to contamination, which is due to polymerization of hydrocarbon molecules by the beam. This effect becomes more important as the size of the beam is reduced. In convergent-beam studies with a beam diameter of 100 Å, contamination was observed to grow on samples at very high rates. Within a few seconds needles began forming under the beam on both the top and the underside of the sample, at growth rates of 400-500 Å/s, severely limiting the time available for observation. Such contamination could cause serious difficulty in examining a sample with the new scanning transmission electron microscopes, in which the beam is focused to a few angstroms.We have been able to reduce the rate of contamination buildup by a combination of methods: placing an anticontamination cold trap in the sample region, preheating the sample before observation, and irradiating the sample with a large beam before observing it with a small beam.

Digital x-ray mapping of nanometer-size supported bimetallic catalysts

1988 ◽  
Vol 46 ◽  
pp. 530-531
Author(s):  
L. T. Germinario
Keyword(s):  
Background Radiation ◽  
Metal Cluster ◽  
Single Element ◽  
Beam Diameter ◽  
X Rays ◽  
X Ray ◽  
Major Interest ◽  
Induced Changes

Understanding the role of metal cluster composition in determining catalytic selectivity and activity is of major interest in heterogeneous catalysis. The electron microscope is well established as a powerful tool for ultrastructural and compositional characterization of support and catalyst. Because the spatial resolution of x-ray microanalysis is defined by the smallest beam diameter into which the required number of electrons can be focused, the dedicated STEM with FEG is the instrument of choice. The main sources of errors in energy dispersive x-ray analysis (EDS) are: (1) beam-induced changes in specimen composition, (2) specimen drift, (3) instrumental factors which produce background radiation, and (4) basic statistical limitations which result in the detection of a finite number of x-ray photons. Digital beam techniques have been described for supported single-element metal clusters with spatial resolutions of about 10 nm. However, the detection of spurious characteristic x-rays away from catalyst particles produced images requiring several image processing steps.

Experiments with a scanning tunneling microscope (STM) mounted in a scanning electron microscope (SEM)

1986 ◽  
Vol 44 ◽  
pp. 636-639
Author(s):  
Oliver C. Wells ◽  
Mark E. Welland
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Mechanical Stability ◽  
Tunneling Current ◽  
Feedback System ◽  
Scanning Tunneling ◽  
Surface Profiling ◽  
Close Proximity ◽  
Metal Tip ◽  
Scanning Electron

Scanning tunneling microscopes (STM) exist in two versions. In both of these, a pointed metal tip is scanned in close proximity to the specimen surface by means of three piezos. The distance of the tip from the sample is controlled by a feedback system to give a constant tunneling current between the tip and the sample. In the low-end STM, the system has a mechanical stability and a noise level to give a vertical resolution of between 0.1 nm and 1.0 nm. The atomic resolution STM can show individual atoms on the surface of the specimen.A low-end STM has been put into the specimen chamber of a scanning electron microscope (SEM). The first objective was to investigate technological problems such as surface profiling. The second objective was for exploratory studies. This second objective has already been achieved by showing that the STM can be used to study trapping sites in SiO2.

Investigation of thin sections of biological standards by EDX, EELS, and Auger electron spectroscopy

1990 ◽  
Vol 48 (2) ◽  
pp. 184-185
Author(s):  
S. Lehner ◽  
H.E. Bauer ◽  
R. Wurster ◽  
H. Seiler
Keyword(s):  
Processing System ◽  
Beam Current ◽  
Beam Diameter ◽  
Thin Sections ◽  
Biologically Relevant ◽  
Energy Filtering ◽  
Low Viscosity ◽  
Carbon Foils ◽  
Electron Microscopical ◽  
Exchange Membrane

In order to compare different microanalytical techniques commercially available cation exchange membrane SC-1 (Stantech Inc, Palo Alto), was loaded with biologically relevant elements as Na, Mg, K, and Ca, respectively, each to its highest possible concentration, given by the number concentration of exchangeable binding sites (4 % wt. for Ca). Washing in distilled water, dehydration through a graded series of ethanol, infiltration and embedding in Spurr’s low viscosity epoxy resin was followed by thin sectioning. The thin sections (thickness of about 50 nm) were prepared on carbon foils and mounted on electron microscopical finder grids.The samples were analyzed with electron microprobe JXA 50A with transmitted electron device, EDX system TN 5400, and on line operating image processing system SEM-IPS, energy filtering electron microscope CEM 902 with EELS/ESI and Auger spectrometer 545 Perkin Elmer.With EDX, a beam current of some 10-10 A and a beam diameter of about 10 nm, a minimum-detectable mass of 10-20 g Ca seems within reach.

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