scholarly journals Self-consistent modelling of X-ray photoelectron spectra from air-exposed polycrystalline TiN thin films

2016 ◽  
Vol 387 ◽  
pp. 294-300 ◽  
Author(s):  
G. Greczynski ◽  
L. Hultman
Keyword(s):  
Thin Films ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Self Consistent ◽  
Tin Thin Films

Preparation and Properties of CuInS2 Thin-Film by Successive Ionic Layer Adsorption and Reaction (SILAR) Method

2007 ◽  
Vol 280-283 ◽  
pp. 877-880
Author(s):  
Zheng Guo Jin ◽  
Yong Shi ◽  
Ji Jun Qiu ◽  
Xiao Xin Liu
Keyword(s):  
Thin Films ◽  
Absorption Spectrum ◽  
Optical Absorption ◽  
Optical Absorption Spectrum ◽  
Photoelectron Spectra ◽  
Molar Ratio ◽  
Silar Method ◽  
X Ray ◽  
Cuins2 Thin Films ◽  
Ionic Layer

CuInS2 thin films were deposited on galss substrate by successive ionic layer absorption and reaction (SILAR) method at room temperature. CuCl2, InCl3, and Na2S were used as precursor materials. The thin films were obtained during the dipping of 20-40 cycles and after annealing in the N2 atmosphere at 500°C. The characterization of the film was carried out by X-ray diffraction, scanning electron microscopy, optical absorption spectrum and X-ray photoelectron spectra. Quantification of the XPS peaks shows that the molar ratio of Cu:In:S of the film is close to the stoichiometry of CuInS2. XRD result demonstrated that the formed compound is CuInS2 with chalcopyrites crystal structure. Direct band gap was found to be 1.5eV from optical absorption spectrum.

Observation of Titania and Titanate Phase Changes in Oxidation-Controlled ZnO/TiN and HfO2/TiN Thin Films: An X-ray Absorption Spectroscopy Study

2016 ◽  
Vol 120 (33) ◽  
pp. 18674-18681 ◽  
Author(s):  
Doyeong Kim ◽  
Minji Lee ◽  
Seung-Yub Song ◽  
Dae Hyun Kim ◽  
Tae Joo Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Absorption Spectroscopy ◽  
Phase Changes ◽  
Spectroscopy Study ◽  
X Ray ◽  
Tin Thin Films ◽  
X Ray Absorption

Platelet Adhesion Study and Characteristic of Hydrogenated Carbon Films Synthesized by PIII-D

2005 ◽  
Vol 288-289 ◽  
pp. 323-326 ◽  
Author(s):  
Feng Wen ◽  
Nan Huang ◽  
H. Sun ◽  
Ping Yang ◽  
Jin Wang
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Raman Spectra ◽  
Room Temperature ◽  
Platelet Adhesion ◽  
Carbon Films ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Composition And Structure ◽  
Amorphous Hydrogenated Carbon

Amorphous hydrogenated carbon (a-C:H) thin films were deposited on silicon wafers and Ti6Al4V substrate using plasma ion immersion implantation and deposition (PIII-D) at room temperature (R.T.). The composition and structure of a-C:H films were employed by X-ray photoelectron spectra (XPS) and Raman spectra. Nano-indenter tests measured the hardness of the films. In addition, wettability and bloodcompatibility were investigated. In this paper, the effects of hydrogen content on structure, mechanical properties, surface wettability and haemocompatibility were discussed.

Study by X-ray photoelectron spectroscopy and X-ray diffraction of the growth of TiN thin films obtained by nitridation of Ti layers

1996 ◽  
Vol 290-291 ◽  
pp. 376-380 ◽  
Author(s):  
S. Santucci ◽  
L. Lozzi ◽  
M. Passacantando ◽  
P. Picozzi ◽  
R. Alfonsetti ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Thin Films

Ultraviolet Irradiation Effects on and Depth Profiles in X-ray Photoelectron Spectra of Poly(vinylpyridine) Thin Films

2008 ◽  
Vol 47 (1) ◽  
pp. 432-437 ◽  
Author(s):  
Satoko Nishiyama ◽  
Masahiro Tajima ◽  
Yoshikata Nakajima ◽  
Tatsuro Hanajiri ◽  
Yasuhiko Yoshida
Keyword(s):  
Thin Films ◽  
Ultraviolet Irradiation ◽  
Photoelectron Spectra ◽  
Irradiation Effects ◽  
X Ray ◽  
Depth Profiles

Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

2010 ◽  
Vol 25 (S1) ◽  
pp. S36-S39 ◽  
Author(s):  
Tieying Yang ◽  
Xiubo Qin ◽  
Huan-hua Wang ◽  
Quanjie Jia ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Microstructure ◽  
Direct Preparation ◽  
Sno2 Thin Films ◽  
P Type ◽  
Reactive Rf Magnetron Sputtering

Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.

X-ray diffraction and X-ray photoelectron spectroscopy characterization of sulfurized tin thin films deposited by thermal evaporation

2018 ◽  
Vol 645 ◽  
pp. 409-416
Author(s):  
Hiroto Oomae ◽  
Takahito Eguchi ◽  
Kunihiko Tanaka ◽  
Misao Yamane ◽  
Naofumi Ohtsu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Thin Films

scholarly journals Structural and X-Ray Photoelectron Spectroscopy Study of Al-Doped Zinc-Oxide Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Bong Ju Lee ◽  
Ho Jun Song ◽  
Jin Jeong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
Gas Flow Rate ◽  
X Ray ◽  
Oxide Component

Al-doped zinc-oxide (AZO) thin films were prepared by RF magnetron sputtering at different oxygen partial pressures and substrate temperatures. The charge-carrier concentrations in the films decreased from 1.69 × 1021to 6.16 × 1017 cm−3with increased gas flow rate from 7 to 21 sccm. The X-ray diffraction (XRD) patterns show that the (002)/(103) peak-intensity ratio decreased as the gas flow rate increased, which was related to the increase of AZO thin film disorder. X-ray photoelectron spectra (XPS) of the O1s were decomposed into metal oxide component (peak A) and the adsorbed molecular oxygen on thin films (peak B). The area ratio of XPS peaks (A/B) was clearly related to the stoichiometry of AZO films; that is, the higher value of A/B showed the higher stoichiometric properties.

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