Identification of grass growth conditions based on sheep grazing acoustic signals

2021 ◽  
Vol 190 ◽  
pp. 106463
Author(s):  
Kui Wang ◽  
Pei Wu ◽  
Chuanzhong Xuan ◽  
Yongan Zhang ◽  
Ku Bu ◽  
...  
Keyword(s):  
Acoustic Signals ◽  
Growth Conditions ◽  
Sheep Grazing ◽  
Grass Growth

Effects of sheep grazing episodes on sediment and nutrient loss in overland flow

Soil Research ◽  
2004 ◽  
Vol 42 (2) ◽  
pp. 213 ◽  
Author(s):  
A. H. Elliott ◽  
W. T. Carlson
Keyword(s):  
Overland Flow ◽  
Infiltration Rate ◽  
Nutrient Loss ◽  
Late Winter ◽  
Nutrient Loads ◽  
Sheep Grazing ◽  
Bare Ground ◽  
Nitrogen And Phosphorus ◽  
Particulate Nutrients ◽  
Grass Growth

The effect of sheep grazing on the loss of sediment and nutrients in overland flow was investigated on a hill-country farm in the Waikato, New Zealand. The losses were measured in runoff produced artificially with small (0.5 m2) and large (1050 m2) rainfall simulators. Immediately after intensive winter grazing, rainfall applied at high intensity increased concentrations by a factor of 13–16 for sediment and particulate nutrients, 33–76 for dissolved reactive phosphorus and ammonium-nitrogen, and 5–7 for dissolved organic nitrogen and phosphorus. During summer, when there was less removal of vegetative cover, there was a smaller effect of grazing. The concentrations of sediment and particulate nutrients in overland flow were strongly correlated with the percentage of bare ground. The concentrations returned to background levels within 6 weeks after grazing, and the infiltration rate and ground cover also recovered from grazing in this time. The small rainfall simulator experiments showed that the infiltration rate decreases with grazing, which results in greater runoff after grazing. The greater runoff combines with the increased concentrations to give higher loads after grazing. In late winter, the infiltration rates were approximately half the summer values and the soil erodibility was approximately double, so the risk of high sediment and nutrient loads is greatest in winter, especially considering the higher rainfall and lower grass growth. The management implications are that exposure of bare ground associated with intensive grazing should be avoided, especially in winter.

Response of white clover and grass to applications of potassium and nitrogen on a potassium-deficient hill soil

1988 ◽  
Vol 110 (1) ◽  
pp. 159-167 ◽  
Author(s):  
D. Simpson ◽  
D. Wilman ◽  
W. A. Adams
Keyword(s):  
White Clover ◽  
Leaf Blade ◽  
Podzolic Soil ◽  
Main Axis ◽  
Sheep Grazing ◽  
Negative Effect ◽  
Cutting Management ◽  
Four Levels ◽  
Rate Of Emergence ◽  
Grass Growth

SummaryAll combinations of four levels of potassium and two of nitrogen were applied in each of 2 years to a hill sward on a brown podzolic soil with an 8 cm peaty surface horizon anda very low level of extractable K. The sward had been surface-sown 11 years before with white clover (Trifolium repens L.) and perennial ryegrass (Lolium perenne L.). During the course of the experiment, harvesting was by cutting, with an average interval between cuts of 5 weeks. The previous management had been sheep grazing.The proportion of clover in harvested herbage was increased by applied K and reduced by applied N. The clover grew strongly in the 1st year of cutting management where K, but no N, was applied, but there was much less clover in the 2nd year on all plots. The concentration of K in both clover and grass was greatly increased by applied K, but only the clover responded strongly in terms of extra herbage produced. This suggests that grass growth was N-limited, whereas the clover had sufficient N from symbiotic fixation.Applied K increased the size and weight of clover leaves, the rate of extension of the stolon main axis, and the number and length of stolon branches, but did not affect the rate of emergence of leaves on the stolon main axis. Applied N had a generally negative effect on the aspects of clover growth and morphology which were measured. The length and weight per ryegrass leaf blade were generally slightly increased by both applied K and applied N.

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

The value of Electron Microscope studies of imperfect natural diamonds

1990 ◽  
Vol 48 (4) ◽  
pp. 194-195
Author(s):  
J C Walmsley ◽  
A R Lang
Keyword(s):  
Electron Microscope ◽  
Classification Scheme ◽  
Natural Diamond ◽  
Sudden Change ◽  
Growth Conditions ◽  
Diamond Growth ◽  
Major Constituent ◽  
Natural Diamonds ◽  
Type Ia ◽  
Platelet Defects

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.

Role of the exosporial membrane in attachment and germination of C. sporogenes

1993 ◽  
Vol 51 ◽  
pp. 38-39
Author(s):  
B.J. Panessa-Warren ◽  
G.T. Tortora ◽  
J.B. Warren
Keyword(s):  
Enzymatic Degradation ◽  
Light Transmission ◽  
Extended Period ◽  
Growth Conditions ◽  
Clostridium Sporogenes ◽  
Radiation Chemical ◽  
Physical Trauma ◽  
Extended Contact ◽  
Cold Pressure

Some bacteria are capable of forming highly resistant spores when environmental conditions are not adequate for growth. Depending on the genus and species of the bacterium, these endospores are resistant in varying degrees to heat, cold, pressure, enzymatic degradation, ionizing radiation, chemical sterilants,physical trauma and organic solvents. The genus Clostridium, responsible for botulism poisoning, tetanus, gas gangrene and diarrhea in man, produces endospores which are highly resistant. Although some sporocides can kill Clostridial spores, the spores require extended contact with a sporocidal agent to achieve spore death. In most clinical situations, this extended period of treatment is not possible nor practical. This investigation examines Clostridium sporogenes endospores by light, transmission and scanning electron microscopy under various dormant and growth conditions, cataloging each stage in the germination and outgrowth process, and analyzing the role played by the exosporial membrane in the attachment and germination of the spore.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Defect morphology in thick relaxed layers of InGaAs on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 668-669
Author(s):  
R H Dixon ◽  
P Kidd ◽  
P J Goodhew
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Strained Layers ◽  
Good Surface ◽  
Transmission Electron ◽  
Device Structures ◽  
Surface Morphologies

Thick relaxed InGaAs layers grown epitaxially on GaAs are potentially useful substrates for growing high indium percentage strained layers. It is important that these relaxed layers are defect free and have a good surface morphology for the subsequent growth of device structures.3μm relaxed layers of InxGa1-xAs were grown on semi - insulating GaAs substrates by Molecular Beam Epitaxy (MBE), where the indium composition ranged from x=0.1 to 1.0. The interface, bulk and surface of the layers have been examined in planar view and cross-section by Transmission Electron Microscopy (TEM). The surface morphologies have been characterised by Scanning Electron Microscopy (SEM), and the bulk lattice perfection of the layers assessed using Double Crystal X-ray Diffraction (DCXRD).The surface morphology has been found to correlate with the growth conditions, with the type of defects grown-in to the layer (e.g. stacking faults, microtwins), and with the nature and density of dislocations in the interface.

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