Effect of mixing acidic and alkaline pressure oxidation discharges with different ratios on gold thiosulfate leaching efficiency

2021 ◽  
Vol 205 ◽  
pp. 105744
Author(s):  
Masih Soleymani ◽  
Farzaneh Sadri ◽  
Ahmad Ghahreman
Keyword(s):  
Pressure Oxidation ◽  
Thiosulfate Leaching ◽  
Leaching Efficiency

scholarly journals Flotation of Carbonaceous Matter from a Double Refractory Gold Ore: The Effect of MIBC on Flotation Performance and Kinetics

Minerals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1021
Author(s):  
Sugyeong Lee ◽  
Charlotte E. Gibson ◽  
Ahmad Ghahreman
Keyword(s):  
Bubble Size ◽  
Gold Recovery ◽  
Carbonaceous Matter ◽  
Flotation Kinetics ◽  
Pressure Oxidation ◽  
Gold Ore ◽  
Refractory Gold ◽  
Flotation Performance ◽  
Thiosulfate Leaching

The use of alkaline pressure oxidation to pretreat refractory gold ore often results in insufficient gold recovery (<60%) in downstream thiosulfate leaching. To improve gold recovery, flotation was considered for the separation of carbonaceous matter (C-matter). In this study, the effect of MIBC on C-matter flotation was investigated to understand the role of the frother in bubble and froth formation and on flotation kinetics. MIBC dosages between 30 and 150 g/t were used in combination with 500 g/t of kerosene as a collector. The results showed that the recovery and selectivity of C-matter were improved with increasing MIBC dosages. Improved selectivity at higher MIBC dosages was attributed to faster C-matter recovery as bubble size decreased to the critical coalescence concentration (CCC) and to changes to the foam structure. Analysis of flotation kinetics showed that the flotation rate increased as the MIBC dosage increased due to the decreasing bubble size and the reduced induction time caused by the interaction between the collector and the frother. The results of this study explain the role of MIBC in C-matter flotation and can be used as a design basis for scavenger-cleaner flotation testing. Overall, the results show the potential for flotation as a means to improve gold recovery in thiosulfate leaching through the removal of C-matter.

scholarly journals Leaching Behavior of Gold and Silver from Concentrated Sulfide Ore Using Ammonium Thiosulfate

Metals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1029
Author(s):  
Mooki Bae ◽  
Sookyung Kim ◽  
Jeongsoo Sohn ◽  
Donghyo Yang ◽  
Hyunju Lee
Keyword(s):  
Liquid Ratio ◽  
Leaching Behavior ◽  
Gold Ores ◽  
Ammonium Thiosulfate ◽  
Sulfide Ore ◽  
Main Chemical Composition ◽  
Hydrometallurgical Treatment ◽  
Thiosulfate Leaching ◽  
Leaching Efficiency ◽  
Thiosulfate Concentration

Ammonium thiosulfate is an alternative lixiviant for the hydrometallurgical treatment of sulfide gold ores. The present study is primarily focused on ammonium thiosulfate leaching of gold (Au) and silver (Ag) from the sulfide ore (Sunshin mine in Korea). The main chemical composition of the concentrate was Au (84 ppm), Ag (852 ppm), Fe (18.9%), Si (23.2%), and S (21.1%). The effects of various parameters on the process, such as leaching time (1–4 h), ammonium thiosulfate concentration (0.05–0.5 M), copper sulfate (CuSO4), concentration (0.05–0.25 M), solid to liquid ratio (0.2–0.5), and reaction temperature (40–60 °C) were systematically examined. Optimum Au leaching efficiency (>99%) was obtained under the following leaching conditions: 0.5 M ammonium thiosulfate with 0.05 M CuSO4 concentration, 0.2 S/L ratio at 60 °C for 2 h. The results indicate that the behavior of Ag was similar to that of Au. Almost complete dissolution of Ag occurred under following leaching conditions: 0.5 M ammonium thiosulfate with 0.05 M CuSO4 concentration at 60 °C for 4 h. This study would be useful in understanding the eco-friendly leaching systems of Au and Ag during the hydrometallurgical process of sulfide gold ore.

A High Voltage Electron Microscopy Study of Sub-Oxide Formation in Vanadium

1971 ◽  
Vol 29 ◽  
pp. 212-213
Author(s):  
R. H. Geiss ◽  
R. L. Ladd ◽  
K. R. Lawless
Keyword(s):  
High Vacuum ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ultra High Vacuum ◽  
Pure Oxygen ◽  
Pressure Oxidation ◽  
High Voltage Electron Microscopy ◽  
Oxidation Study ◽  
Voltage Electron ◽  
Good Agreement

Detailed electron microscope and diffraction studies of the sub-oxides of vanadium have been reported by Cambini and co-workers, and an oxidation study, possibly complicated by carbon and/or nitrogen, has been published by Edington and Smallman. The results reported by these different authors are not in good agreement. For this study, high purity polycrystalline vanadium samples were electrochemically thinned in a dual jet polisher using a solution of 20% H2SO4, 80% CH3OH, and then oxidized in an ion-pumped ultra-high vacuum reactor system using spectroscopically pure oxygen. Samples were oxidized at 350°C and 100μ oxygen pressure for periods of 30,60,90 and 160 minutes. Since our primary interest is in the mechanism of the low pressure oxidation process, the oxidized samples were cooled rapidly and not homogenized. The specimens were then examined in the HVEM at voltages up to 500 kV, the higher voltages being necessary to examine thick sections for which the oxidation behavior was more characteristic of the bulk.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

scholarly journals Hydrometallurgical recycling of EV lithium-ion batteries: Effects of incineration on the leaching efficiency of metals using sulfuric acid

2021 ◽  
Vol 125 ◽  
pp. 192-203
Author(s):  
Nathália Vieceli ◽  
Raquel Casasola ◽  
Gabriele Lombardo ◽  
Burçak Ebin ◽  
Martina Petranikova
Keyword(s):  
Sulfuric Acid ◽  
Lithium Ion Batteries ◽  
Lithium Ion ◽  
Leaching Efficiency

scholarly journals Leaching of Chalcopyrite under Bacteria–Mineral Contact/Noncontact Leaching Model

Minerals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 230
Author(s):  
Pengcheng Ma ◽  
Hongying Yang ◽  
Zuochun Luan ◽  
Qifei Sun ◽  
Auwalu Ali ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Passivation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Leaching Process ◽  
Copper Leaching ◽  
Hydrolysis Of ◽  
Leaching Efficiency ◽  
Leaching Models ◽  
Scanning Electron

Bacteria–mineral contact and noncontact leaching models coexist in the bioleaching process. In the present paper, dialysis bags were used to study the bioleaching process by separating the bacteria from the mineral, and the reasons for chalcopyrite surface passivation were discussed. The results show that the copper leaching efficiency of the bacteria–mineral contact model was higher than that of the bacteria–mineral noncontact model. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier-transform infrared (FTIR) were used to discover that the leaching process led to the formation of a sulfur film to inhibit the diffusion of reactive ions. In addition, the deposited jarosite on chalcopyrite surface was crystallized by the hydrolysis of the excess Fe3+ ions. The depositions passivated the chalcopyrite leaching process. The crystallized jarosite in the bacteria EPS layer belonged to bacteria–mineral contact leaching system, while that in the sulfur films belonged to the bacteria–mineral noncontact system.

Biofilm Formation, Communication and Interactions of Mesophilic Leaching Bacteria during Pyrite Oxidation

2013 ◽  
Vol 825 ◽  
pp. 107-110
Author(s):  
Sören Bellenberg ◽  
Robert Barthen ◽  
Mario Vera ◽  
Nicolas Guiliani ◽  
Wolfgang Sand
Keyword(s):  
Quorum Sensing ◽  
Acidithiobacillus Ferrooxidans ◽  
Biofilm Formation ◽  
Pyrite Oxidation ◽  
Cell Communication ◽  
Homoserine Lactone ◽  
Mixed Cultures ◽  
Acyl Homoserine Lactone ◽  
Leaching Bacteria ◽  
Leaching Efficiency

A functional luxIR-type Quorum Sensing (QS) system is present in Acidithiobacillus ferrooxidans. However, cell-cell communication among various acidophilic chemolithoautotrophs growing on pyrite has not been studied in detail. These aspects are the scope of this study with emphasis on the effects exerted by the N-acyl-homoserine lactone (AHL) type signaling molecules which are produced by Acidithiobacillus ferrooxidans. Their effects on attachment and leaching efficiency by other leaching bacteria, such as Acidithiobacillus ferrivorans, Acidiferrobacter spp. SPIII/3 and Leptospirillum ferrooxidans in pure and mixed cultures growing on pyrite is shown.

The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

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