Ultrahigh-temperature oxidation of 4H-SiC (0 0 0 1) and gate oxide reliability dependence on oxidation temperature

2020 ◽  
Vol 530 ◽  
pp. 125250 ◽  
Author(s):  
Caiping Wan ◽  
Hengyu Xu ◽  
Jinghua Xia ◽  
Jin-Ping Ao
2017 ◽  
Vol 897 ◽  
pp. 323-326 ◽  
Author(s):  
Takuji Hosoi ◽  
Daisuke Nagai ◽  
Mitsuru Sometani ◽  
Takayoshi Shimura ◽  
Manabu Takei ◽  
...  

This paper reviews our recent work on ultrahigh-temperature oxidation of 4H-SiC(0001) surfaces. Our rapid thermal oxidation experiments demonstrated the reaction-limited linear growth at temperatures ranging from 1200 to 1600°C. The Arrhenius plot of linear growth rate of thermal oxidation can be fitted by a linear line, and the activation energy of oxide growth in dry O2 oxidation was estimated to be 2.9 eV. We also found that unintentional oxidation during the cooling down process severely degrades SiO2/SiC interface properties, resulting in positive flatband voltage shift (VFB) and hysteresis in capacitance-voltage (C-V) characteristics regardless of oxidation temperature. By effectively suppressing oxide growth during the cooling process, we have clarified that SiO2/SiC interface properties depend on oxidation temperature and the lowest interface state density was obtained for the oxide formed at 1450°C.


1995 ◽  
Vol 35 (3) ◽  
pp. 603-608 ◽  
Author(s):  
S.R. Anderson ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
J.L. Titus

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3764
Author(s):  
Krzysztof Aniołek ◽  
Adrian Barylski ◽  
Marian Kupka

High-temperature oxidation was performed at temperatures from 600 to 750 °C over a period of 24 h and 72 h. It was shown in the study that the oxide scale became more homogeneous and covered the entire surface as the oxidation temperature increased. After oxidation over a period of 24 h, the hardness of the produced layers increased as the oxidation temperature increased (from 892.4 to 1146.6 kgf/mm2). During oxidation in a longer time variant (72 h), layers with a higher hardness were obtained (1260 kgf/mm2). Studies on friction and wear characteristics of titanium were conducted using couples with ceramic balls (Al2O3, ZrO2) and with high-carbon steel (100Cr6) balls. The oxide films produced at a temperature range of 600–750 °C led to a reduction of the wear ratio value, with the lowest one obtained in tests with the 100Cr6 steel balls. Frictional contact of Al2O3 balls with an oxidized titanium disc resulted in a reduction of the wear ratio, but only for the oxide scales produced at 600 °C (24 h, 72 h) and 650 °C (24 h). For the ZrO2 balls, an increase in the wear ratio was observed, especially when interacting with the oxide films obtained after high-temperature oxidation at 650 °C or higher temperatures. The increase in wear intensity after titanium oxidation was also observed for the 100Cr6 steel balls.


MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 410-418 ◽  
Author(s):  
Angelo Bongiorno ◽  
Clemens J. Först ◽  
Rajiv K. Kalia ◽  
Ju Li ◽  
Jochen Marschall ◽  
...  

AbstractThe broader context of this discussion, based on a workshop where materials technologists and computational scientists engaged in a dialogue, is an awareness that modeling and simulation techniques and computational capabilities may have matured sufficiently to provide heretofore unavailable insights into the complex microstructural evolution of materials in extreme environments.As an example, this article examines the study of ultrahigh-temperature oxidation-resistant ceramics, through the combination of atomistic simulation and selected experiments.We describe a strategy to investigate oxygen transport through a multi-oxide scale—the protective layer of ultrahigh-temperature ceramic composites ZrB2-SiC and HfB2-SiC—by combining first-principles and atomistic modeling and simulation with selected experiments.


1998 ◽  
Vol 38 (2) ◽  
pp. 255-258 ◽  
Author(s):  
G Ghidini ◽  
C Clementi ◽  
D Drera ◽  
F Maugain

2021 ◽  
Author(s):  
Tianshi Liu ◽  
Shengnan Zhu ◽  
Michael Jin ◽  
Limeng Shi ◽  
Marvin H. White ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document