Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

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Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Coatings ◽

10.3390/coatings9120823 ◽

2019 ◽

Vol 9 (12) ◽

pp. 823

Author(s):

Shizheng Yang ◽

Hongliang Lv ◽

Likun Ai ◽

Fangkun Tian ◽

Silu Yan ◽

...

Keyword(s):

Growth Temperature ◽

Wafer Level ◽

X Ray Diffraction ◽

Nucleation Layer ◽

Force Microscopy ◽

Gas Source ◽

Atomic Force ◽

Growth Method ◽

Step Growth ◽

Microscopy Images

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

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The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer

MRS Proceedings ◽

10.1557/proc-1068-c03-09 ◽

2008 ◽

Vol 1068 ◽

Cited By ~ 1

Author(s):

Ewa Dumiszewska ◽

Wlodek Strupinski ◽

Piotr Caban ◽

Marek Wesolowski ◽

Dariusz Lenkiewicz ◽

...

Keyword(s):

High Temperature ◽

Buffer Layer ◽

Oxygen Concentration ◽

Growth Temperature ◽

Low Temperatures ◽

Buffer Layers ◽

Crystalline Quality ◽

Temperature Growth ◽

Gan Buffer Layer

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.

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Effect of growth temperature and Si doping on the microstructure of GaN thin films grown on high temperature GaN

physica status solidi (c) ◽

10.1002/pssc.200303484 ◽

2003 ◽

Vol 0 (7) ◽

pp. 2095-2098 ◽

Cited By ~ 4

Author(s):

Kwang Suk Son ◽

Dongyu Kim ◽

Hyung Koun Cho ◽

Kyuhan Lee ◽

Sunwoon Kim ◽

...

Keyword(s):

Thin Films ◽

High Temperature ◽

Growth Temperature ◽

Si Doping

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Effect of Temperature on the Growth and Biochemical Composition of Sargassum muticum

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.989-994.747 ◽

2014 ◽

Vol 989-994 ◽

pp. 747-750 ◽

Cited By ~ 1

Author(s):

Chun Ying Yuan ◽

Shuo Yang ◽

Yue Wang ◽

Qing Man Cui

Keyword(s):

High Temperature ◽

Growth Temperature ◽

Biochemical Composition ◽

Soluble Sugar ◽

High Temperature Stress ◽

Sargassum Muticum ◽

Effect Of Temperature ◽

Optimum Growth ◽

Optimum Growth Temperature ◽

Biochemical Components

Under the laboratory conditions, the effect of temperature (10, 15, 20, 25, 30°C) on growth and biochemical composition of Sargassum muticum was studied, the results showed that: the optimum growth temperature of S.muticum was 15 °C in the range of 10-30 °C; the contents of chlorophyll a, carotenoid, soluble protein, soluble sugar and brown algae polyphenols were the highest at the temperature of 25 °C, it was speculated that these components appeared compensatory increase duo to the high temperature stress. The contents of these biochemical components were the lowest at 30 °C.

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Effect of growth temperature on the microstructure of the nucleation layers of GaN grown by MOCVD on (1120) sapphire

MRS Proceedings ◽

10.1557/proc-743-l3.19 ◽

2002 ◽

Vol 743 ◽

Author(s):

T. Wojtowicz ◽

P. Ruterana ◽

M. E. Twigg ◽

R. L. Henry ◽

D. D. Koleske ◽

...

Keyword(s):

High Temperature ◽

Structural Analysis ◽

Growth Temperature ◽

Structural Parameters ◽

Three Dimensional ◽

Nucleation Mechanism ◽

Structural Defects ◽

Orientation Relationships ◽

Island Growth ◽

Work Done

AbstractMost of the work done on GaN has taken into account layers grown on the (0001) sapphire plane. However one would expect the growth on the (1120) plane to lead to different structural defects. As has been shown, in one direction, the mismatch is rather small. In this work, we have carried out structural analysis of nucleation layers grown at temperatures ranging from 600°C to 1100°C. It is shown that for many of the structural parameters, such as the orientation relationships, the layer morphology and the nucleation mechanism critically depend on the growth temperature. At the lowest temperatures, the growth is completely three dimensional with a mixture of the two traditional orientation relationships, but the coalescence thickness is small. In a next step, the A orientation relationship predominates and the layer roughness tends to slightly decrease. This orientation is never perfect, and there is always 1.5° misorientation to the same direction in sapphire, whereas the B orientation is always perfect. At an intermediate temperature, island growth is predominant, whereas towards the high temperature end the B orientation becomes predominant. For the highest growth temperatures, the nucleated layers are completely flat and with the B orientation, although they contain a quite large number of defects such as inversion domains.

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SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.251 ◽

2006 ◽

Vol 527-529 ◽

pp. 251-254 ◽

Cited By ~ 16

Author(s):

Yuuichi Takeuchi ◽

Mitsuhiro Kataoka ◽

Tsunenobu Kimoto ◽

Hiroyuki Matsunami ◽

Rajesh Kumar Malhan

Keyword(s):

High Temperature ◽

Epitaxial Growth ◽

Growth Temperature ◽

Crystal Orientation ◽

Growth Process ◽

Diffusion Length ◽

Growth Behavior ◽

Electrical Performance ◽

Similar Growth ◽

Growth Technology

In this work, we have developed an innovative epitaxial growth process named the “Migration Enhanced Embedded Epitaxial” (ME3) growth process. It was found that at elevated growth temperatures, the epitaxial growth at the bottom of the trenches is greatly enhanced compared to growth on the sidewalls. This is attributed to the large surface diffusion length of reactant species mainly due to the higher growth temperature. In addition, it was found that this high temperature ME3 growth process is not influenced by the crystal-orientation. Similar growth behavior was observed for stripe-trench structures aligned either along the [11-20] or [1-100] directions. No difference was observed in the electrical performance of the pn diodes fabricated on either oriented stripe geometry. The ME3 process can also be used as an alternative to ion-implantation technology for selective doping process.

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The Preliminary Isolation and Identification of Several Aerobic Thermophilic Bacteria

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.807-809.2019 ◽

2013 ◽

Vol 807-809 ◽

pp. 2019-2022

Author(s):

Xiao Dan Huang ◽

Jian Tan ◽

Zheng Rong Yang ◽

Lin Du

Keyword(s):

High Temperature ◽

Growth Temperature ◽

Thermophilic Bacteria ◽

Optimum Growth ◽

Isolation And Identification ◽

Gram Positive ◽

Optimum Growth Temperature ◽

Degradation Ability ◽

Application Prospects

Thermophilic bacteria are widely existed in nature, and it has broadly application prospects in the degradation of organics. Here an aerobic thermophilic bacteria , which is named Z3, was isolated with high temperature cultivation. Z3 has well degradation ability to macromolecules organics such as starch, protein, lipid and cellulose .Z3 bacteria were identified as aerobic and Gram-positive Bacillus with spores, with the optimum growth temperature of about 65 °C.

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Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.127 ◽

2010 ◽

Vol 645-648 ◽

pp. 127-130 ◽

Cited By ~ 6

Author(s):

Nikoletta Jegenyes ◽

Jean Lorenzzi ◽

Véronique Soulière ◽

Jacques Dazord ◽

François Cauwet ◽

...

Keyword(s):

High Temperature ◽

Surface Morphology ◽

Gas Phase ◽

Chemical Vapour Deposition ◽

Growth Temperature ◽

Vapour Deposition ◽

Defect Density ◽

Chemical Vapour ◽

Defect Size ◽

Homoepitaxial Growth

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

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