Control of the set and reset voltage polarity in anti-series and anti-parallel resistive switching structures

A new operating scheme for voltage-polarity-controlled multilevel memory based on Ag/MoS2/Au flexible structure with reversible alternation between bipolar and unipolar resistive switching modes was demonstrated.

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Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

npj 2D Materials and Applications ◽

10.1038/s41699-020-00190-0 ◽

2021 ◽

Vol 5 (1) ◽

Author(s):

Sifan Li ◽

Bochang Li ◽

Xuewei Feng ◽

Li Chen ◽

Yesheng Li ◽

...

Keyword(s):

Electron Beam ◽

Resistive Switching ◽

Neuromorphic Computing ◽

Reset Voltage ◽

Voltage Variation ◽

Artificial Synapse ◽

Metal Insulator Metal ◽

Temporal And Spatial ◽

Transition Voltage

AbstractState-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is difficult to control, which results in poor temporal and spatial switching uniformity. Here, a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS2) is realized, which unveils a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices exhibit a forming-free, stable gradual RS characteristic, and simultaneously achieve a small transition voltage variation during positive and negative sweeps (6.3%/5.3%). The RS is attributed to the motion of sulfur vacancies induced by voltage bias in the device, which modulates the ReS2/metal SBH. The gradual SBH modulation stabilizes the temporal variation in contrast to the abrupt RS in MIM-based memristors. Moreover, the emulation of long-term synaptic plasticity of biological synapses is demonstrated using the device, manifesting its potential as artificial synapse for energy-efficient neuromorphic computing applications.

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Effect of RESET Voltage on Distribution of SET Switching Time of Bipolar Resistive Switching in a Tantalum Oxide Thin Film

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2411748 ◽

2015 ◽

Vol 62 (5) ◽

pp. 1561-1567 ◽

Cited By ~ 17

Author(s):

Yoshifumi Nishi ◽

Karsten Fleck ◽

Ulrich Bottger ◽

Rainer Waser ◽

Stephan Menzel

Keyword(s):

Thin Film ◽

Resistive Switching ◽

Switching Time ◽

Tantalum Oxide ◽

Oxide Thin Film ◽

Bipolar Resistive Switching ◽

Reset Voltage ◽

Set Switching

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Set and Reset Voltage Interdependence in Resistive Switching Memory Cells

ECS Transactions ◽

10.1149/06903.0057ecst ◽

2015 ◽

Vol 69 (3) ◽

pp. 57-66

Author(s):

G. Ghosh ◽

M. K. Orlowski

Keyword(s):

Resistive Switching ◽

Memory Cells ◽

Resistive Switching Memory ◽

Reset Voltage ◽

Switching Memory

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Investigation of Conductive Mechanism of Amorphous IGO Resistive Random-Access Memory with Different Top Electrode Metal

Coatings ◽

10.3390/coatings10050504 ◽

2020 ◽

Vol 10 (5) ◽

pp. 504

Author(s):

Wei-Lun Huang ◽

Yong-Zhe Lin ◽

Sheng-Po Chang ◽

Shoou-Jinn Chang

Keyword(s):

Resistive Switching ◽

Rf Sputtering ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Access Memory ◽

Bipolar Resistive Switching ◽

Reset Voltage ◽

Resistance State ◽

Conductive Mechanism

In this paper, resistive random-access memory (RRAM) with InGaO (IGO) as an active layer was fabricated by radio-frequency (RF) sputtering system and the resistive switching mechanism with the different top electrode (TE) of Pt, Ti, and Al were investigated. The Pt/IGO/Pt/Ti RRAM exhibits typical bipolar resistive switching features with an average set voltage of 1.73 V, average reset voltage of −0.60 V, average high resistance state (HRS) of 54,954.09 Ω, and the average low resistance state (LRS) of 64.97 Ω, respectively. Ti and Al were substituted for Pt as TE, and the conductive mechanism was different from TE of Pt. When Ti and Al were deposited onto the switching layer, both TE of Ti and Al will form oxidation of TiOx and AlOx because of their high activity to oxygen. The oxidation will have different effects on the forming of filaments, which may further affect the RRAM performance. The details of different mechanisms caused by different TE will be discussed. In brief, IGO is an excellent candidate for the RRAM device and with the aids of TiOx, the set voltage, and reset voltage, HRS and LRS become much more stable.

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Effect of Pd Nanocrystals on Resistive Switching Characteristics in HfOx Memory Devices

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.684.3 ◽

2013 ◽

Vol 684 ◽

pp. 3-6 ◽

Cited By ~ 2

Author(s):

Tsung Kuei Kang ◽

Chih Kai Wang ◽

Ysung Yu Yang

Keyword(s):

Resistive Switching ◽

Flexible Electronics ◽

Random Access ◽

Resistive Random Access Memory ◽

High Yield ◽

Metal Nanocrystals ◽

Reset Voltage ◽

Resistance State ◽

Switching Characteristics ◽

Effect Of Pd

For resistive random access memory (RRAM), there is an important issue about variations of switching characteristics such as set/reset voltage of resistance state. The variations may result in an incorrect reading operation. Another issue is device yield, which determine whether fabricated memory can be applied in commercial product. We investigated the switching performance of HfOx metal oxide as a resistive switching layer embedded with and without Pd metal nanocrystals. Compared with Pd/HfOx/TiN structure, the memory embedded with Pd metal nanocrystals (Pd/Pd embedded HfOx/TiN) shows high yield, better electrical uniformity and reliability for the flexible electronics application.

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New Resistive Switching Phenomena in Devices with Limited Active Metal Source

MRS Proceedings ◽

10.1557/opl.2013.589 ◽

2013 ◽

Vol 1562 ◽

Author(s):

Mohini Verma ◽

Yuhong Kang ◽

Tanmay Potnis ◽

Sushil Khadka ◽

Tong Liu ◽

...

Keyword(s):

Resistive Switching ◽

Metal Electrode ◽

Switching Behavior ◽

Negative Bias ◽

Direct Impact ◽

Device Structure ◽

Metal Source ◽

Voltage Polarity ◽

Active Metal ◽

Limited Supply

ABSTRACTTo better understand the mechanisms of creation and rupture of conductive filaments in resistive switching devices such as Cu/TaOx/Pt, with Cu and Pt being the active and inert electrodes, respectively, a device with limited supply of active metal electrode has been manufactured and electrically characterized. The limited supply of active metal has been realized by depositing a thin (delta) Cu layer (δ-Cu), 6 nm and 12 nm thick, on TaOx, resulting in a Pt/δ-Cu/TaOx/Pt device structure. The limited active metal supply i) has a direct impact on the onresistance (Ron) of the Cu bridge, and leads, after several conventional set-reset cycles, to ii) pulsating behavior, when device turns on and off repeatedly, to iii) symmetric switching behavior with respect to applied voltage polarity, when the device can be set and reset both at positive and negative bias, and to iv) volatile switching behavior.

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