Athermal high-Q tantalum-pentoxide-based microresonators on silicon substrates

ABSTRACTTantalum pentoxide (Ta2O5) films were formed by oxidizing thin tantalum (Ta) films on bare and NO-nitrided silicon substrates. The 43-400 Å thick Ta films were deposited using physical vapor deposition (PVD) and oxidized using O2 for 2-60 min at 550-800 C in a furnace or single wafer tool. Uniform and stoichiometric Ta2O5 films were successfully produced as determined from XRD, AES depth profiling, XTEM, and ellipsometric analysis. The nitridation pretreatment was found to minimize the interfacial Ta-Si reactions which occur during the oxidation. Well-behaved CV and IV curves were obtained from mercury probe measurements. No CV hysteresis was observed. An equivalent oxide thickness of 38 Å and a leakage current of 7×10−9 A/cm2 at +1V were obtained for a 120 Å thick Ta2O5 film on a 15 Å interfacial SiO2 layer.

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Low Cost SU8 Based Above IC Process for High-Q RF Power Inductors Integration

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.431 ◽

2011 ◽

Vol 324 ◽

pp. 431-433 ◽

Cited By ~ 1

Author(s):

Ayad Ghannam ◽

David Bourrier ◽

Christophe Viallon ◽

Thierry Parra

Keyword(s):

Dielectric Layer ◽

Low Cost ◽

Silicon Substrates ◽

Rf Power ◽

High Q ◽

Low Resistivity ◽

New Process ◽

Power Inductors ◽

5 Ghz ◽

Q Values

This paper presents a new process for integration of high-Q RF power inductors above low resistivity silicon substrates. The process uses the SU8 resin as a dielectric layer. The aim of using the SU8 is to form thick dielectric layer that can enhance the performance of the inductors. The flexibility of the process enables the possibility to realize complex shaped planar inductors with various dielectric and metal thicknesses to meet the requirements of the application. Q values of 55 at 5 GHz has been demonstrated for an inductance value of 0.8 nH using a 60 µm thick SU8 layer and 30 µm thick copper ribbons.

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Stereometric analysis of Ta2O5 thin films

Materials Science-Poland ◽

10.2478/msp-2019-0083 ◽

2020 ◽

Vol 0 (0) ◽

Cited By ~ 1

Author(s):

Dinara Sobola ◽

Pavel Kaspar ◽

Jindrich Oulehla ◽

Ştefan Ţălu ◽

Nikola Papež

Keyword(s):

Thin Films ◽

Three Dimensional ◽

Theoretical Models ◽

Electron Beam Evaporation ◽

Tantalum Pentoxide ◽

Silicon Substrates ◽

Force Microscopy ◽

Atomic Force ◽

20 Nm ◽

Reference Samples

AbstractThe purpose of this work is the study of the correlation between the thickness of tantalum pentoxide thin films and their three-dimensional (3D) micromorphology. The samples were prepared on silicon substrates by electron beam evaporation. The differences in surface structure of the processed and reference samples were investigated. Compositional studies were performed by energy-dispersive X-ray spectroscopy. Stereometric analysis was carried out on the basis of atomic force microscopy (AFM) data, for tantalum pentoxide samples with 20 nm, 40 nm, 60 nm, 80 nm and 100 nm thicknesses. These methods are frequently used in describing experimental data of surface nanomorphology of Ta2O5. The results can be used to validate theoretical models for prediction or correlation of nanotexture surface parameters.

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Low-loss and high index-contrast tantalum pentoxide microring resonators and grating couplers on silicon substrates

Optics Letters ◽

10.1364/ol.39.005379 ◽

2014 ◽

Vol 39 (18) ◽

pp. 5379 ◽

Cited By ~ 24

Author(s):

Payam Rabiei ◽

Ashutosh Rao ◽

Jeff Chiles ◽

Jichi Ma ◽

Sasan Fathpour

Keyword(s):

High Index ◽

Tantalum Pentoxide ◽

Microring Resonators ◽

Silicon Substrates ◽

Low Loss ◽

Grating Couplers ◽

Index Contrast ◽

High Index Contrast

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Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100114104 ◽

1975 ◽

Vol 33 ◽

pp. 96-97

Author(s):

R. W. Ditchfield ◽

A. G. Cullis

Keyword(s):

Epitaxial Growth ◽

Electron Energy ◽

Silicon Substrates ◽

Secondary Phases ◽

Si Substrates ◽

Transmission Electron ◽

Layer Structures ◽

Si Films ◽

Electron Energy Loss ◽

Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106399 ◽

1988 ◽

Vol 46 ◽

pp. 866-867

Author(s):

E. L. Hall ◽

A. Mogro-Campero ◽

L. G. Turner ◽

N. Lewis

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Superconducting Films ◽

Electron Beam Evaporation ◽

Film Deposition ◽

Silicon Substrates ◽

Superconducting Properties ◽

Sequential Electron ◽

Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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Formation of defects in implanted hipox-structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131668 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1406-1407

Author(s):

Peter Pegler ◽

N. David Theodore ◽

Ming Pan

Keyword(s):

High Pressure ◽

Cross Section ◽

Semiconductor Devices ◽

Silicon Substrates ◽

Processing Conditions ◽

Pressure Oxidation ◽

Deep Trench ◽

Local Oxidation ◽

Trench Isolation ◽

And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126494 ◽

1987 ◽

Vol 45 ◽

pp. 340-341

Author(s):

H. L. Tsai ◽

J. W. Lee

Keyword(s):

Growth Process ◽

Molecular Beam ◽

Substrate Surface ◽

Lattice Misfit ◽

Device Fabrication ◽

Silicon Substrates ◽

Defect Structures ◽

Gaas Film ◽

Substrate Quality ◽

Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

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Roughness measurements of nonlinear optical polymer films by scanning tunneling microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100152082 ◽

1989 ◽

Vol 47 ◽

pp. 22-23

Author(s):

I. H. Musselman ◽

R.-T. Chen ◽

P. E. Russell

Keyword(s):

Surface Roughness ◽

Scanning Tunneling Microscopy ◽

Nonlinear Optical ◽

Polymer Surface ◽

Light Extinction ◽

Scanning Tunneling ◽

Silicon Substrates ◽

Tunneling Microscopy ◽

Optical Polymer ◽

Total Light

Scanning tunneling microscopy (STM) has been used to characterize the surface roughness of nonlinear optical (NLO) polymers. A review of STM of polymer surfaces is included in this volume. The NLO polymers are instrumental in the development of electrooptical waveguide devices, the most fundamental of which is the modulator. The most common modulator design is the Mach Zehnder interferometer, in which the input light is split into two legs and then recombined into a common output within the two dimensional waveguide. A π phase retardation, resulting in total light extinction at the output of the interferometer, can be achieved by changing the refractive index of one leg with respect to the other using the electrooptic effect. For best device performance, it is essential that the NLO polymer exhibit minimal surface roughness in order to reduce light scattering. Scanning tunneling microscopy, with its high lateral and vertical resolution, is capable of quantifying the NLO polymer surface roughness induced by processing. Results are presented below in which STM was used to measure the surface roughness of films produced by spin-coating NLO-active polymers onto silicon substrates.

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