scholarly journals Near infrared photonic devices based on Er-doped GaN and InGaN

2011 ◽  
Vol 33 (7) ◽  
pp. 1066-1070 ◽  
Author(s):  
R. Dahal ◽  
J.Y. Lin ◽  
H.X. Jiang ◽  
J.M. Zavada
Keyword(s):  
Near Infrared ◽  
Photonic Devices ◽  
Er Doped

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS

Nanoscale ◽  
2013 ◽  
Vol 5 (20) ◽  
pp. 9963 ◽  
Author(s):  
Alberto Eljarrat ◽  
Lluís López-Conesa ◽  
José Manuel Rebled ◽  
Yonder Berencén ◽  
Joan Manel Ramírez ◽  
...  
Keyword(s):  
Photonic Devices ◽  
Silicon Nanoclusters ◽  
Doped Silicon ◽  
Er Doped ◽  
Compositional Properties

Nondegenerate and degenerate two-photon absorption in cuprous oxide thin film

2019 ◽  
Vol 28 (02) ◽  
pp. 1950015 ◽  
Author(s):  
Huijun Liang ◽  
Qunchao Ma ◽  
Jian Liu ◽  
Xinwei Shi ◽  
Gongjin Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Cuprous Oxide ◽  
Near Infrared ◽  
Rf Magnetron Sputtering ◽  
Photonic Devices ◽  
Photon Absorption ◽  
Oxide Thin Film ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Nir Absorption

A cuprous oxide (Cu2O) thin film was prepared by radio-frequency (RF) magnetron sputtering. The crystal structure, linear transmission spectrum and film thickness were characterized by X-ray diffraction (XRD), ultraviolet–visible–near infrared (UV–Vis–NIR) absorption spectroscopy and ellipsometry. By performing the pump-probe and [Formula: see text]-scan technique, respectively, nondegenerate and degenerate two-photon absorption (D-TPA) coefficients of the Cu2O thin film at several different excitation wavelengths were experimentally determined. The nondegenerate two-photon absorption (ND-TPA) coefficient always exhibits larger magnitude than the corresponding D-TPA coefficient. In particular, the ND-TPA coefficient shows a maximum value of [Formula: see text][Formula: see text]cm/GW. This study indicates that the cuprous oxide could be a potential material for ultrafast nonlinear photonic devices based on two-photon absorption due to its large ND-TPA coefficient.

MXene Photonic Devices for Near-Infrared to Mid-Infrared Ultrashort Pulse Generation

2020 ◽  
Vol 3 (4) ◽  
pp. 3513-3522 ◽  
Author(s):  
Zhenhong Wang ◽  
Hongbo Li ◽  
Mulin Luo ◽  
Tenghui Chen ◽  
Xuefeng Xia ◽  
...  
Keyword(s):  
Ultrashort Pulse ◽  
Near Infrared ◽  
Photonic Devices ◽  
Pulse Generation ◽  
Mid Infrared ◽  
Ultrashort Pulse Generation

Control of Optical Performance from Er-Doped Alumina Synthesized Using An Ecr Plasma

1997 ◽  
Vol 504 ◽  
Author(s):  
J. C. Barbour ◽  
B. G. Potter
Keyword(s):  
Near Infrared ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Ecr Plasma ◽  
Thermal Release ◽  
Simple Linear Equation ◽  
Er Doped

ABSTRACTHydrogen in deposited optical ceramics can modify the optical properties, and therefore the role of the hydrogen needs to be understood to control its effects. Erbium-doped amorphous alumina films were deposited using simultaneous electron beam evaporation of aluminum and erbium while bombarding the sample with 30 eV 02+ ions from an electron cyclotron resonance (ECR) plasma. The hydrogen content was measured, using elastic recoil detection, as a function of isochronal annealing treatments. The data was fit to a simple trap-release model in order to determine an effective activation energy for the thermal release of H from alumina and Er-doped alumina. The intensity of the ion-beam stimulated luminescence from these samples was monitored in the visible and near infrared regions as a function of the thermal treatments. In order to gain a better understanding of the influence of hydrogen, the ionoluminescence (IL) data from samples containing hydrogen were fit with a simple linear equation.

scholarly journals Palladium selenide as a broadband saturable absorber for ultra-fast photonics

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2557-2567 ◽  
Author(s):  
Huanian Zhang ◽  
Pengfei Ma ◽  
Mingxiao Zhu ◽  
Wenfei Zhang ◽  
Guomei Wang ◽  
...  
Keyword(s):  
Pulse Width ◽  
Photonic Devices ◽  
Average Output ◽  
Electronic Band ◽  
Central Wavelength ◽  
Saturable Absorbers ◽  
Application Potential ◽  
Maximum Average Output Power ◽  
Promising Application ◽  
Er Doped

AbstractAir-stable broadband saturable absorbers (SAs) exhibit a promising application potential, and their preparations are also full of challenges. Palladium selenide (PdSe2), as a novel two-dimensional (2D) layered material, exhibits competitive optical properties including wide tunable bandgap, unique pentagonal atomic structure, excellent air stability, and so on, which are significant in designing air-stable broadband SAs. In our work, theoretical calculation of the electronic band structures and bandgap characteristics of PdSe2 are studied first. Additionally, PdSe2 nanosheets are synthesized and used for designing broadband SAs. Based on the PdSe2 SA, ultrafast mode-locked operations in 1- and 1.5-μm spectral regions are generated successfully. For the mode-locked Er-doped operations, the central wavelength, pulse width, and pulse repetition rate are 1561.77 nm, 323.7 fs, and 20.37 MHz, respectively. Meanwhile, in all normal dispersion regions, mode-locked Yb-doped fiber laser with 767.7-ps pulse width and 15.6-mW maximum average output power is also generated successfully. Our results fully reveal the capacity of PdSe2 as a broadband SA and provide new opportunities for designing air-stable broadband ultra-fast photonic devices.

Prototyping of three-dimensional photonic crystal structures using electron-beam lithography

2004 ◽  
Vol 846 ◽  
Author(s):  
G. Subramania ◽  
J. M. Rivera
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Electron Beam Lithography ◽  
Near Infrared ◽  
Photonic Band Gap ◽  
Three Dimensional ◽  
Photonic Devices ◽  
Layer By Layer ◽  
Photonic Band Gap Structure ◽  
Band Gap Structure

ABSTRACTWe demonstrate the fabrication of a three-dimensional woodpile photonic crystal in the near-infrared regime using a layer-by-layer approach involving electron-beam lithography and spin-on-glass planarization. Using this approach we have shown that we can make structures with lattice spacings as small as 550 nm with silicon as well as gold thus allowing for fabrication of photonic crystals with omnidirectional gap in the visible and near-IR. As a proof of concept we performed optical reflectivity and transmission measurements on a silicon structure which reveal peaks and valleys expected for a photonic band gap structure. The approach described here can be scaled down to smaller lattice constants (down to ∼400 nm) and can also be used with a variety of materials (dielectric and metallic) thus enabling rapid prototyping full three-dimensional photonic bandgap based photonic devices in the visible.

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